Untitled
Abstract: No abstract text available
Text: Datasheet for part number MDM-100PH003P Our Catalog Part Number: MDM-100PH003P Our Global Manufacturing Part Number: 097390-0244 Brand: Cannon Product Category: Micro Product Line: Micros Series: MICRO Product Datasheet Series Arrangement Gender Contact Material
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MDM-100PH003P
M16874/4
26AWG,
to100
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Untitled
Abstract: No abstract text available
Text: Datasheet for part number MDM-100PH003M12 Our Catalog Part Number: MDM-100PH003M12 Our Global Manufacturing Part Number: 097390-0431 Brand: Cannon Product Category: Micro Product Line: Micros Series: MICRO Product Datasheet Series Arrangement Gender Contact Material
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MDM-100PH003M12
M16874/4
26AWG,
to100
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Untitled
Abstract: No abstract text available
Text: Datasheet for part number MDM-100PH016L Our Catalog Part Number: MDM-100PH016L Brand: Cannon Product Category: Micro Product Line: Micros Series: MICRO Product Datasheet Series Arrangement Gender Contact Material Contact Typ Contact Resistance Termination Type
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MDM-100PH016L
M16874/4
26AWG,
to100
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Untitled
Abstract: No abstract text available
Text: Datasheet for part number MDM-100PH003L Our Catalog Part Number: MDM-100PH003L Our Global Manufacturing Part Number: 097390-0154 Brand: Cannon Product Category: Micro Product Line: Micros Series: MICRO Product Datasheet Series Arrangement Gender Contact Material
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MDM-100PH003L
M16874/4
26AWG,
to100
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Untitled
Abstract: No abstract text available
Text: Datasheet for part number MDM-100PH003M17 Our Catalog Part Number: MDM-100PH003M17 Brand: Cannon Product Category: Micro Product Line: Micros Series: MICRO Product Datasheet Series Arrangement Gender Contact Material Contact Typ Contact Resistance Termination Type
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MDM-100PH003M17
M16874/4
26AWG,
to100
M83513/5-17.
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Untitled
Abstract: No abstract text available
Text: Datasheet for part number MDM-100PH003B Our Catalog Part Number: MDM-100PH003B Our Global Manufacturing Part Number: 097390-0195 Brand: Cannon Product Category: Micro Product Line: Micros Series: MICRO Product Datasheet Series Arrangement Gender Contact Material
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MDM-100PH003B
M16874/4
26AWG,
to100
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Untitled
Abstract: No abstract text available
Text: Y5V Dielectric General Specifications Y5V formulations are for general-purpose use in a limited temperature range. They have a wide temperature characteristic of +22% –82% capacitance change over the operating temperature range of –30°C to +85°C. Y5V’s high dielectric constant allows the manufacture of the
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Internal MLCC cracking result serious failure mode
Abstract: capacitor 47 nano X7R CAPACITORS color code
Text: Low Inductance Capacitors Introduction Multiple terminations of a capacitor will also help in reducing the parasitic inductance of the device. The IDC is such a device. By terminating one capacitor with 8 connections the ESL can be reduced even further. The measured inductance
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0.01 micro farad capacitor
Abstract: CAPACITOR 100 nano FARAD 25 VOLT 4700 micro farad capacitor "zero ohm" 1808 capacitor 2220 Piezo Ceramic plates capacitor 4700 micro farad 50 volts 10 micro farad capacitor 4700 micro farad 3300 micro farad capacitor
Text: High Voltage MLC Chips For 600V to 5000V Application High value, low leakage and small size are difficult parameters to obtain in capacitors for high voltage systems. AVX special high voltage MLC chips capacitors meet these performance characteristics and are designed for
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LLA219
Abstract: LLA185 LLA21 LLA215 LLA319 LLL153
Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please
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LLM21
LLM31
10000pF
22000pF
47000pF
LLA219
LLA185
LLA21
LLA215
LLA319
LLL153
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Untitled
Abstract: No abstract text available
Text: Inductor m Inductance 250pcs 1210 Size ,01 pH 0.1 pH 1.0pH 10pH 1Q0pH 1612 Size 1.0pH 10pH 100pH 1000pH ~ 100 pcs 667-000 667-010 667-110 667-210 667-310 668-110 668-210 668-310 668-410 467-000 467-010 467-110 467-210 467-310 468-110 468-210 468-310 468-410
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250pcs
100pH
1000pH
450mA
400mA
150mA
250mA
110mA
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RIO+1R5
Abstract: RIO R47
Text: Inductors S M D 10:08 moulded chip winding Key features • high reliability • attractively priced • small size • 2.5 x 2.0mm 10:08 • temperature range -20°C to +100°C • taped to IEC 286 Pt 3 • suitable for dip and wave solder • inductance of 0.01 pH to 100pH
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100pH
10CTC
F0721
RIO+1R5
RIO R47
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Untitled
Abstract: No abstract text available
Text: CH SERIES FEATURES □ □ □ □ □ □ □ □ RADIAL LEAD p H IG H CURRENT FILTER CHOKES Type DCR SRF indue. Rated Max. MHz 1 KHz Current (ohm) (Min.) CH3 5pH 10pH 27pH 50pH 100pH 150pH 270uH 5pH CH5 10pH 27 pH 50pH 68pH 100pH 150pH 3A 3A 3A 3A 3A 3A
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100pH
150pH
270uH
270uH)
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PDF
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Untitled
Abstract: No abstract text available
Text: D ata S heet PM ^^ ^ M 3m E L A M £ P H ^ Q U A D E T H E R N E T 10/100PHY PMC-961137 1. FEATURES Monolithic Quad Fast Ethernet Physical Layer Device for Local Area Networks LANs . Combines 10Base-T, 100Base-TX and 100Base-FX in a Quad PHY device to simplify the design and manufacturing of Fast Ethernet products.
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PMC-961137
10/100PHY
10Base-T,
100Base-TX
100Base-FX
100Base-TX,
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Untitled
Abstract: No abstract text available
Text: MODEL ISC1812 Shielded Inductors Molded Case R ated DCR C u rre n t O h m s Q M ax M ax M in I^el 4 Inductance 1.0pH 1.2pH 1.5pH 1.8pH 2.2pH 2.7pH 3.3pH 3.9pH 4.7pH 5,6pH 6.8pH 8.2pH 10pH 12pH 15pH 18pH 22pH 27pH 33pH 39pH 47pH 56pH 68pH 82pH 100pH 120pH 150pH
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ISC1812
100pH
120pH
150pH
180pH
220pH
270pH
390pH
470pH
560pH
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Untitled
Abstract: No abstract text available
Text: NATIONAL SEMICONDUCTOR SIMPLE SWITCHER® APPLICATIONS This Series of Power Line Chokes has inductances from 100pH to 680|j H with sat uration currents available from 2.79 Amps to 0.70 Amp. The use of high saturation material make these coils ideal for use in
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100pH
RL-1950
RL-1951
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PDF
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pj 87 diode
Abstract: diode pj 87 te2s 2SK2653-01R
Text: F U JI StHlELTUtìliE N-channel MOS-FET 2SK2653-01R FAP-IISSeries 900V Features 2,5 £2 6A 80 W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 3 0 V G uarantee Repetitive Avalanche Rated
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2SK2653-01R
Vcc-80V;
pj 87 diode
diode pj 87
te2s
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PDF
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2SK2292-01L
Abstract: No abstract text available
Text: F U JI 2SK2292-01L.S G IlL lM E U iM J IS FAP-IIA Series > Features - High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage - VGS = ± 30V Guarantee N-channel MOS-FET 250V 4A l.lfl 20W > Outline Drawing - Avalanche Proof
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2SK2292-01L
20Ki2)
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCED IN FO RM A TIO N P L D L V 2 2 V 10-15 Low Voltage, High Performance 10-Macrocell CMOS PLD Low Voltage, High Speed Upgrade to BiCMOS/Bipolar 22V 10 and CMOS Equivalents • Variable P -term s-U p to 16 per Macrocell, Selectable Output Polarity, Separate Output
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10-Macrocell
50MHz
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PDF
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EFL 233
Abstract: 2SK2757-01 n4570
Text: F U JI ölüMeulßäUG 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
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OCR Scan
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2SK2757-01
O-220AB
EFL 233
n4570
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PDF
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2SK2647-01
Abstract: 0/2SK2647-01
Text: FU JI 2SK2647-01 MR N-channel MOS-FET FAP-IIS Series 800V > Features 4Q 4A 40 W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications
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2SK2647-01
DDOi4b71
0/2SK2647-01
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K375
Abstract: MKL series vai 27 lf OM35F120PB OM45L120PB OM50F60PB OM60L60PB 50F60 60L60
Text: OM6OL6OPB OM45L120PB Preliminary Data Sheet OM50F60PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp Dual IGBTs With FRED Diodes FEATURES • Includes Internal FRED Diode • Rugged Package Design
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OM45L120PB
OM50F60PB
OM35F12QPB
MIL-S-19500,
030-J
b7flT073
D001D71
K375
MKL series
vai 27 lf
OM35F120PB
OM60L60PB
50F60
60L60
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PDF
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2SK2645
Abstract: 2SK2645-01
Text: F U JI 2SK2645-01 MR N-channel MOS-FET FAP-IIS Series 600V > Features - \,2Q. 9A 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated T O -2 2 0 F 1 5
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2SK2645-01
2SK2645
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PDF
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BR93C46
Abstract: BR93C46F
Text: MDE D m 7fl2aeH t OOOmm 2 • RHM ROHM CO L T D IC /M e m o ry !Cs BR93C46 IK fcf"J h CM O S 5V v y T J l EEPROM 64X16 Bit 5V EEPROM T-44-/3-27 • W F iri'ji0 /D im e n s io n s Unit : mm) BR93C46 ( i , 1024 bf-y h ? CMOS * >J (EEPROM) T 'f o > i ' J 8 1 $ l i , 64 U ' s Z f X 16 fcf-y h t S i t i U ,
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BR93C46
64X16
T-44-/3-27
BR93C46)
BR93C46
/D15YD14Y
T-46-13-27
BR93C46F
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