bcy59x
Abstract: BCY59-VIII BCY59IX bcy59v BCY59-X bcy59-vii bcy58-x BCY59VII BCY59
Text: DATA SHEET BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
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BCY58,
BCY59,
BCY59
100mA,
bcy59x
BCY59-VIII
BCY59IX
bcy59v
BCY59-X
bcy59-vii
bcy58-x
BCY59VII
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Untitled
Abstract: No abstract text available
Text: BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCY58 and BCY59 series types are silicon NPN epitaxial planar transistors, mounted in a hermetically sealed metal case, designed
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BCY58,
BCY59,
BCY58
BCY59
100mA,
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ZBD849
Abstract: transistor bf 970
Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A MARCH 94 FEATURES * Fast switching
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ZBD849
ZBD849
transistor bf 970
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tf600
Abstract: IC4a ZTX1051A DSA003762
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am
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ZTX1051A
100ms
NY11725
tf600
IC4a
ZTX1051A
DSA003762
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2n5786
Abstract: 2N5783
Text: 2N5783 PNP 2N5786 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5783 and 2N5786 types are Complementary Silicon Power Transistors designed for general purpose switching and amplifier applications.
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2N5783
2N5786
160mA
800mA
100mA,
2N5783)
200kHz
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ZETEX T1049
Abstract: T1049 ZDT1049 DSA003723
Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1049 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL T1049 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage
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ZDT1049
OT223)
T1049
50MHz
100mA
ZETEX T1049
T1049
ZDT1049
DSA003723
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d44c5
Abstract: d44c9 D44C11
Text: D44C SERIES w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER
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O-220
D44C1
D44C4
D44C2
D44C5
D44C3
D44C6
D44C7
D44C10
D44C8
d44c5
d44c9
D44C11
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ZTX384C
Abstract: ztx384 low noise transistor ZTX38
Text: NPN SILICON PLANAR LOW NOISE TRANSISTOR ZTX384C ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Output Capacitance MIN. TYP. MAX. UNIT CONDITIONS. Cobo 2.5 5 pF VCB=10V, f=1MHz Input Capacitance Cibo 11 pF VEB=0.5V, f=1MHz
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ZTX384C
15KHz
100mA,
ZTX384C
ztx384
low noise transistor
ZTX38
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ztx1049a
Abstract: DSA003762
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 JUNE 1995
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ZTX1049A
100ms
ztx1049a
DSA003762
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ZTX1053A
Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am
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ZTX1053A
100ms
NY11725
ZTX1053A
BF 245 A spice
ztx1053a datasheet
NC176
BF600
bf 245 spice
1053A
ZTX1053
zetex transistor to92
21E12
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2N2916
Abstract: No abstract text available
Text: 2N2914 2N2916 2N2918 S EM E LA B MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021)
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2N2914
2N2916
2N2918
100mA
2N2916
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2N2916
Abstract: 2N2918 2N2914 2N2916 Transistor
Text: 2N2914 2N2916 2N2918 SEME LAB MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021)
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2N2914
2N2916
2N2918
100mA
2N2916
2N2918
2N2914
2N2916 Transistor
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2N2915
Abstract: 2N2917 2N2913 2n2917 dual transistor
Text: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)
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2N2913
2N2915
2N2917
100mA
2N2915
2N2917
2N2913
2n2917 dual transistor
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Untitled
Abstract: No abstract text available
Text: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)
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2N2913
2N2915
2N2917
100mA
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BCY79C
Abstract: BCY79B
Text: BCY79 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) GENERAL PURPOSE, SMALL SIGNAL, PNP TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL NPN
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BCY79
O-206AA)
-10mA
-100mA
-10mA,
-100mA
-10mA
BCY79C
BCY79B
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2N2913
Abstract: 2N2915
Text: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)
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2N2913
2N2915
2N2917
2N2913DCSM"
2N2913DCSM
2N2913DCSM-JQR-B
5/10u
60MHz
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ZTX618
Abstract: ZTX718 DSA003771
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Rth j-amb 1 Rth(j-amb)2 MAX. UNIT 175 116 °C/W °C/W 180 160 D=1(D.C.) t1 120 100 tP D=t1
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ZTX618
ZTX718
1995Telephone:
ZTX618
ZTX718
DSA003771
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BCB47A
Abstract: No abstract text available
Text: S TïïTTÏÏTl T ransistors SOT-23 Types SST (Super Slim Transistor Function Pre Am p Low Noise Am p Driver Driver hM f,(M H z) C ob (pF) P ackage 800 1 1 0 -2 5 0 100mA/1 V 150 6 Fig. 16 NPN 45 800 160 ~ 400 100mA/1 V 150 6 Fig 16 NPN 45 100 1 1 0 -2 3 0
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800C817-16
BC817-25
BCB47A
BC847B
BC847C
BC84BA
BC848B
BC848C
BC857A
BC858A
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NPN CBO 40V CEO 25V EBO 5V
Abstract: MMST8598
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.
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OT-23)
200mA
SC-59/Japanese
SST1130
MMST1130
SST5088
MMST5088
100nA
50MHz
NPN CBO 40V CEO 25V EBO 5V
MMST8598
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sot23 marking code 8pf
Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V
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OT-23)
SC-59/Japanese
SST1130
MMST1130
200mA
SST5088
MMST5088
100nA
SST5089
sot23 marking code 8pf
marking r2k
R2Z SOT23
SSTA29
G1F G1K G3F
MARKING CODE B25 SOT23-5
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100ria
Abstract: 25V6K RN5305 2N4494
Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V
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2N3707
MPS3707
2N3708
MPS3708
2N3709
MPS3709
2N3701
MPS3710
2N3711
MPS3711
100ria
25V6K
RN5305
2N4494
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LC32A
Abstract: 2N5783 2N5786
Text: Datasheet AU_ 2N5783 2N5786 m TM C e nItw MMil III PNP NPN COM PLEM ENTARY SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors
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2N5783
2N5786
2N5783,
100mA,
2N5783)
200kHz
2N5786)
LC32A
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MPS6566
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA2034
MPS6532
MPS6566
MPSA20
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Untitled
Abstract: No abstract text available
Text: DIE NO. NPN Medium Power TRANSISTOR DIE No. IMAXIMUM RATINGS T a= 25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 45 V Collector-Base Voltage VcBO 45 V Emitter-Base Voltage Vebo 5 V Parameter D—15 • DESCRIPTION Collector Current Continuous
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D--15
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