100ITIA Search Results

FMM-1718

Abstract: FMMT720 FMM1717 1DA SOT23 FMMT617 FMMT618 FMMT619 FMMT717 FMMT718 FMMT722
Contextual Info: E-1 I H ‘“”’’’”T’’’’” I I THERMAL CHARACTERISTICS AND DERATING INFORMATION .60 -40 -20 ?0 40 60 AMBIENT TEMPERATURE DEG DERATING 00 >00 120 140 160 CELSIUS CURVE 200 : l.1 150 s z < !7J 100 m s 2 z $ !- 50 O.lms 1ms 1Oms PuLSE MAXIMUM

Contextual Info: central" CMPTA29 Semiconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring

2SC2824

Abstract: 2SA1184 AC46C
Contextual Info: TOSHIBA { D I S C R E T E / O P T Oî 9097250 TOSHIBA DlF| T O ^ S O 56C < 0 I S C R E T E /O P T O 07606 DD07t.Gt D r - 3 3 - 0 7 2SC2824 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES:

Contextual Info: Central CMPTA29 Sem iconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring

microwave oscillator

Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Contextual Info: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n ­ HIGH fS