100GXHH Search Results

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

Contextual Info: 100GXHH22 TOSHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 4500V :F AV = 1°0 a M A X IM U M RATINGS CHARACTERISTIC

100GXHH22

Contextual Info: TOSHIBA 100GXHH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage • V r r m = 4500V • Average Forward Current • lF AV = 100A • Reverse Recovery Time • tj>j*—5.5^s

100GXHH22

Contextual Info: TOSHIBA 100GXHH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time v RRM = 4500V ÏF AV = 100 a tj»j»—5*5jus

Contextual Info: 100GXHH22 TOSHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE m n riY H H ? • w i r 'w m m ■ ■ ■ ■ HIGH SPEED RECTIFIER APPLICATIONS U nit in mm • Repetitive Peak Reverse Voltage : V r r ]\/[ = 4500V • Average Forward C urrent : Ip AV = 100A

6B4B41

Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
Contextual Info: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

100EXG11

Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26

100gxhh21

Abstract: 1000GXHH22 21133 100gxhh
Contextual Info: ALPHANUMERICAL INDEX GATE TURN-OFF GTO THYRISTOR — Asymmetrical Type — Low Snubber Type S G 8 0 0 R 2 4 . 59 S G 8 0 0 U 2 4 . 59 S G 8 0 0 W 2 4 . 59

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that