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Kyocera AVX Components 100B471KT200XT1K CAP CER 470PF 200V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B471KT200XT1K	Cut Tape	4,710		1	1 $8.14 10 $6.089 100 $8.14 1000 $8.14 10000 $8.14	Buy Now
	100B471KT200XT1K	Digi-Reel	4,710		1	1 $8.14 10 $6.089 100 $8.14 1000 $8.14 10000 $8.14	Buy Now
	100B471KT200XT1K	Reel	4,000		1,000	1 - 10 - 100 - 1000 $4.45422 10000 $4.34471	Buy Now
Richardson RFPD	100B471KT200XT1K				1,000	1 - 10 - 100 - 1000 $3.24 10000 $2.89	Buy Now
Kyocera AVX Components 100B4R7BW500XT1K CAP CER 4.7PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B4R7BW500XT1K	Digi-Reel	2,047		1	1 $7.51 10 $5.586 100 $7.51 1000 $7.51 10000 $7.51	Buy Now
	100B4R7BW500XT1K	Reel	1,800		1,000	1 - 10 - 100 - 1000 $4.05297 10000 $3.95024	Buy Now
Avnet Asia	100B4R7BW500XT1K			18 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B470JTN500XT1K CAP CER 47PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B470JTN500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $3.18768 10000 $3.18768	Buy Now
Kyocera AVX Components 100B430GW500XT1K CAP CER 43PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B430GW500XT1K	Digi-Reel	829		1	1 $5.25 10 $3.803 100 $5.25 1000 $5.25 10000 $5.25	Buy Now
	100B430GW500XT1K	Cut Tape	829		1	1 $5.25 10 $3.803 100 $5.25 1000 $5.25 10000 $5.25	Buy Now
Kyocera AVX Components 100B4R3BW500XT1K CAP CER 4.3PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B4R3BW500XT1K	Digi-Reel	410		1	1 $7.83 10 $5.844 100 $7.83 1000 $7.83 10000 $7.83	Buy Now
	100B4R3BW500XT1K	Cut Tape	410		1	1 $7.83 10 $5.844 100 $7.83 1000 $7.83 10000 $7.83	Buy Now

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100B4 Datasheets (70)

Part	Manufacturer	Description	Datasheet Type	PDF
100B40	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
100B-4005	Pulse Engineering	10/100BASE-TX QUAD-PORT TRANSFORMER MODULESMilitary / Aerospace Grade	Original	PDF
100B-4005NL	iNRCORE	XFMR CHK QUAD 100BT SMT X RPB	Original	PDF
100B-4005NL	Pulse Electronics	XFMR CHK QUAD 100BT SMT X RPB	Original	PDF
100B-4005NLT	iNRCORE	XFMR CHK QUAD 100BT SMT X RPB	Original	PDF
100B-4005NLT	Pulse Electronics	XFMR CHK QUAD 100BT SMT X RPB	Original	PDF
100B-4005T	Pulse Engineering	10/100Base-TX Quad-Port Transformer Modules Military/Aerospace Grade, Tape&Reel	Original	PDF
100B-4005X	Pulse Engineering	10/100BASE-TX QUAD-PORT TRANSFORMER MODULESMilitary / Aerospace Grade	Original	PDF
100B-4005XNL	iNRCORE	XFMR CHK QUAD 100BT SMT X PBC	Original	PDF
100B-4005XNL	Pulse Electronics	XFMR CHK QUAD 100BT SMT X PBC	Original	PDF
100B-4005XNLT	iNRCORE	XFMR CHK QUAD 100BT SMT X EXM	Original	PDF
100B-4005XNLT	Pulse Electronics	XFMR CHK QUAD 100BT SMT X EXM	Original	PDF
100B-4005XT	Pulse Engineering	10/100Base-TX Quad-Port Transformer Modules Military/Aerospace Grade, Tape&Reel	Original	PDF
100B40F	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF

100B430GTN500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 43PF 500V P90 1111	Original	PDF
100B430GW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 43PF 500V P90 1111	Original	PDF
100B430GW500XT1K	American Technical Ceramics	Ceramic Capacitor 43PF 500V P90 1111	Original	PDF
100B430JP500X	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers	Original	PDF
100B430JP500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 43PF 500V P90 1111	Original	PDF
100B430JT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 43PF 500V P90 1111	Original	PDF

100B4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 100B40 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage4.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.20 V(FM) Max.(V) Forward Voltage5.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)25’	Original	100B40 Current100m Current20u StyleAxial-97	PDF
Untitled Abstract: No abstract text available Text: 100B40F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage4.0k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)2.0m @I(R) (A) (Test Condition)4.0m V(FM) Max.(V) Forward Voltage6.0	Original	100B40F Current100m Time300n Current20u StyleAxial-97	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier	Original	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3	PDF
MRF9030MBR1 Abstract: MRF9030MR1 100B7R5JP Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 100B7R5JP	PDF
AGR09030GUM Abstract: JESD22-C101A RF35 Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35	PDF
100B-4009X Abstract: 100B-4009 Text: 10/100BASE-TX TRANSFORMER MODULES Military/Aerospace Grade Compliant with IEEE802.3u & X3.263 Standards 350uH OCL with 8mA DC IC grade transfer-molded package withstands 235°C peak temperature profile Operating and Storing Temperature: 100B-4009 : -40ºC to +85ºC	Original	10/100BASE-TX IEEE802 350uH 100B-4009 100B-4009X: 1-100MHz 100B-4009 100B-4009X* 2-30MHz 40MHz 100B-4009X	PDF
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW	PDF
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3	PDF
RF-35-0300 Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360	PDF
330 j73 Tantalum Capacitor Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1 Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest	Original	MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1	PDF
MRF21085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1	PDF

Untitled Abstract: No abstract text available Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 MRF6S9045MR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1	PDF
Untitled Abstract: No abstract text available Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS	OCR Scan	SD2900 SD2900 1021498C 1010936C	PDF
j340 motorola make Abstract: MRF21085 Text: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF21085 MRF21085R3 MRF21085LSR3 j340 motorola make	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6P21190HR6 MRF6P21190HR6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	MRF284 MRF284LR1 MRF284LSR1	PDF
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1	PDF
rf push pull mosfet power amplifier Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	MRF9120 MRF9120LR3 MRF9120 rf push pull mosfet power amplifier	PDF
C8450 Abstract: MRF5S4140H Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450	PDF
RF-35-0300 Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060R1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S MRF9060L	PDF

100B4 Search Results

100B4 Price and Stock

Kyocera AVX Components 100B471KT200XT1K

Kyocera AVX Components 100B4R7BW500XT1K

Kyocera AVX Components 100B470JTN500XT1K

Kyocera AVX Components 100B430GW500XT1K

Kyocera AVX Components 100B4R3BW500XT1K

100B4 Datasheets (70)

100B4 Datasheets Context Search

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MRF9030MBR1

AGR09030GUM

100B-4009X

C1206C104KRAC7800

100B101JW

RF-35-0300

330 j73 Tantalum Capacitor

MRF21085

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j340 motorola make

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rf push pull mosfet power amplifier

C8450

RF-35-0300