100uF capacitor
Abstract: FERRITE TRANSFORMER capacitor 471 RF Resistor 50 OHM 470 resistor 470 ohm resistor 393m RF400 100b choke FERRITE TRANSFORMER 3932
Text: DB-3932-30 BOM Component ID XFer1 R1 R2, R3 R4,R5 C1,C2,C3,C4 C5, C8 C6, C9 C7,C10 C11, C12 L1,L2 L3 Bal1 torroid torroid RF in, RF out SD3932 Board Description 9:1 transformer Resistor Resistor Resistor Capacitor Capacitor Capacitor Capacitor Capacitor SPLIT CHOKE
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DB-3932-30
SD3932
39000pF
1200pF
100uF
39uH/side
2943802702B
100uF capacitor
FERRITE TRANSFORMER
capacitor 471
RF Resistor 50 OHM
470 resistor
470 ohm resistor
393m
RF400
100b choke
FERRITE TRANSFORMER 3932
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DIODE 4005
Abstract: DIODE aay 49 100b choke M175 SD1660 AAY49 GE DIODE
Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST
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SD1660
SD1660
DIODE 4005
DIODE aay 49
100b choke
M175
AAY49
GE DIODE
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DIODE aay 49
Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST
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SD1660
SD1660
DIODE aay 49
100MF 63V
GE DIODE
diode l19
AAY49
M175
si diode
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SD1680
Abstract: M175 push pull class AB RF linear DIODE aay 49 j 4005
Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST
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SD1680
SD1680
M175
push pull class AB RF linear
DIODE aay 49
j 4005
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VK200 FERRITE
Abstract: 22 J.63 capacitor vk-200 ferrite choke VK-200 M142 SD4017
Text: SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN
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SD4017
SD4017
VK200 FERRITE
22 J.63 capacitor
vk-200 ferrite choke
VK-200
M142
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VK200 ferrite
Abstract: 22 J.63 capacitor e35r SD4017 vk-200 ferrite choke J.63 capacitor M142 VK-200 120142 8569
Text: SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN
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SD4017
SD4017
VK200 ferrite
22 J.63 capacitor
e35r
vk-200 ferrite choke
J.63 capacitor
M142
VK-200
120142
8569
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SD1680
Abstract: DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE
Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST
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SD1680
SD1680
DIODE aay 49
Electronic ballast 100W
push pull class AB RF linear
SD168
M175
GE DIODE
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SD4701
Abstract: OZ 960 variable capacitor VK-200
Text: SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . DESIGNED FOR CLASS AB LINEAR OPERATION COMMON EMITTER INTERNAL INPUT/OUTPUT MATCHING 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN.
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SD4701
SD4701
OZ 960
variable capacitor
VK-200
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SD4701
Abstract: VK-200 200 pF air variable capacitor
Text: SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . DESIGNED FOR CLASS AB LINEAR OPERATION COMMON EMITTER INTERNAL INPUT/OUTPUT MATCHING 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN.
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SD4701
SD4701
VK-200
200 pF air variable capacitor
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BLV 730
Abstract: capacitor polyester philips transposers Philips 2222 capacitor 2222 capacitor Philips 2222 030 capacitor philips Philips DC Power Amplifier 380 Philips 2222-030 L6 PHILIPS BLV33
Text: APPLICATION NOTE Wideband class-A power amplifier for TV transposers in band I 50 − 80 MHz with two transistors BLV33 NCO8207 Philips Semiconductors Wideband class-A power amplifier for TV transposers in band I (50 − 80 MHz) with two transistors BLV33
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BLV33
NCO8207
BLV33
ECO7904
SCA57
BLV 730
capacitor polyester philips
transposers
Philips 2222 capacitor
2222 capacitor Philips
2222 030 capacitor philips
Philips DC Power Amplifier 380
Philips 2222-030
L6 PHILIPS
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FERRITE TRANSFORMER 3932
Abstract: DB-3932-30 393M M177 RF400-9 SD3932 100b choke IMD-30 IMD10
Text: DB-3932-30 Evaluation board using 1x SD3932 for HF transmitters Features • Excellent thermal stability ■ Frequency: 2 - 30 MHz ■ Supply voltage: 100 V ■ Output power: 400 W ■ Input power 4 W max. ■ Efficiency: 62 % - 68 % ■ IMD at 400 WPEP < -25 dBc
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DB-3932-30
SD3932
DB-3932-30
1xSD3932
FERRITE TRANSFORMER 3932
393M
M177
RF400-9
100b choke
IMD-30
IMD10
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ISO-14001
Abstract: TS-16949
Text: Dual Port SMD 10/100Base-T Isolation Transformer Modules Features • Low profile and light weight 10/100 BaseT modules facilitate pick and place compatability and speed of placement • Meets requirements of IEEE 802.3u and ANSIX3.263 • Consistent and reliable coplanarity
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10/100Base-T
ISO-9001
TS-16949
ISO-14001
J-STD-020C
100kHz,
100mV,
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TED-400
Abstract: 10/100 BASE TRANSFORMERS LAN COMPONENTS ISO-14001 TS-16949
Text: Dual Port SMD 10/100Base-T Isolation Transformer Modules Features • Low profile and light weight 10/100 BaseT modules facilitate pick and place compatability and speed of placement • Meets requirements of IEEE 802.3u and ANSIX3.263 • Consistent and reliable coplanarity
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10/100Base-T
ISO-9001
TS-16949
ISO-14001
J-STD-020C
100kHz,
100mV,
TED-400
10/100 BASE TRANSFORMERS LAN COMPONENTS
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Untitled
Abstract: No abstract text available
Text: LSiirautH" 80220/80221 10OBASE- TX/1OBASE- T Ethernet Media Interface Adapter 98184 This document is an LSI Logic document. Any reference to SEEQ Technology should be considered LSI Logic. Features • Single Chip 100B ase-T X /1 OBase-TPhysical Layer Note: C heck fo r latest Data Sheet revision
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10OBASE-
10Base-T,
100B4
MD400159/E
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K 4005 transistor
Abstract: No abstract text available
Text: f Z 7 ^ 7 # . S G M S - 1 H 0 M » Ê t H ê r a M S 0 N SD1660 O g ! RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . . . . > 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY
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SD1660
SD1660
K 4005 transistor
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Untitled
Abstract: No abstract text available
Text: 57. SGS-THOMSON SD4017 •m RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION P o u t = 30 W MIN. WITH 7.5 dB GAIN
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SD4017
SD4017
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VK200 FERRITE
Abstract: 8569 222x
Text: {ZT SGS-THOMSON ^ 7 # . [ lQ g [E } ( Q iL i( g T ^ ( Q M ( g ls S D 4 0 1 7 RF & M I C R O W A V E T R A N S I S T O R S 8 0 6 - 9 6 0 MHz C E L L U L A R BASE S T A T I O N S • GO LD M ETALLIZATIO N ■ DIFFUSED EM ITTER BALLASTING ■ INTERNAL INPUT M ATCHING
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SD4017
VK200 FERRITE
8569
222x
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Untitled
Abstract: No abstract text available
Text: f Z 7 S G S -T H O M S O N ^ 7 # . K M SD1680 « « ® « ! RF & M I C R O W A V E T R A N S I S T O R S 8 0 0 /9 0 0 M H z A P P L I C A T I O N S • . ■ . ■ ■ . ■ ■ . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR
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SD1680
SD1680
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Untitled
Abstract: No abstract text available
Text: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY
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SD1680
SD1680
1994SGS-THOMSON
0D70b77
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sd1483
Abstract: GP LL3
Text: SGS-THOMSON ^ 7 # . » » I l L ll g r a W D SD1483 g i RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS > 88 - 108 MHz . 28 VOLTS . EFFICIENCY 60% . COMMON EMITTER . GOLD METALLIZATION > P o u t = 300 W MIN. WITH 10 dB GAIN PIN CONNECTION 1 1 2 DESCRIPTION
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SD1483
SD1483
GP LL3
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Untitled
Abstract: No abstract text available
Text: SGS-mOMSON ;ti gra s o(êi SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . DESIGNED FOR CLASS AB LINEAR OPERATION . COMMON EMITTER • INTERNAL INPUT/OUTPUT MATCHING ■ 26 VOLT, 960 MHz PERFORMANCE: P o u t = 45 W MIN. GAIN = 8.5 dB MIN.
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SD4701
tlE37
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Untitled
Abstract: No abstract text available
Text: fZ 7 S G S - T H O M S O N SD4701 RF & MICROWAVE TRANSISTO RS CELLULAR BASE STATION APPLICATIONS • DESIGNED FOR CLASS AB LINEAR OPERATION ■ COMMON EMITTER . INTERNAL INPUT/OUTPUT MATCHING ■ 26 VOLT, 960 MHz PERFORMANCE: P o u t = 45 W MIN. GAIN = 8.5 dB MIN.
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SD4701
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K 4005 transistor
Abstract: ISD1660 ATC100B 47JJ
Text: f Z 7 SGS-THOMSON ^ 7 # . K M SD1660 « « ® « ! RF & M I C R O W A V E T R A N S I S T O R S 8 0 0 /9 0 0 M H z A P P L I C A T I O N S • . ■ . ■ ■ . ■ ■ . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR
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SD1660
SD1660
K 4005 transistor
ISD1660
ATC100B
47JJ
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CAT-5 Sdi IC
Abstract: No abstract text available
Text: PRELIMINARY AM D ii Am79C874 NetPHY -1LP Low Power 10/100-TX/FX Ethernet Transceiver DISTINCTIVE CHARACTERISTICS • 10/100BASE-TX Ethernet PHY1OOBASE-FX fiber optic support ■ Typical power consumption of 0.3 W ■ Sends/receives data reliably over cable lengths
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Am79C874
10/100BASE-TX
100BASE-X
10BASE-T
10BASE-T
10/100-TX/FX
CAT-5 Sdi IC
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