2SK1840
Abstract: No abstract text available
Text: Ordering number: E N 4635 No.4635 I 2SK1840 N-Channel Enhancement MOS Silicon FET Analog Switch Applications Features • Large I Vfs I . • Enhancement type. • Low ON resistance. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage
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EN4635
2SK1840
10a/A
2SK1840
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Untitled
Abstract: No abstract text available
Text: KSA643 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSD261 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)
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KSA643
KSD261
500mW
Emitt350/
0024b4b
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2SK880
Abstract: MARKING LODB
Text: T O S H IB A 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS • High |Yfs| : |Yfc| = 15mS Typ. at V D S = 10V, 2.1 + 0.1 vGs=o 1.25 ± 0.1 3- • High Breakdown Voltage : V q d s = —50Y
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2SK880
SC-70
2SK880
MARKING LODB
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Untitled
Abstract: No abstract text available
Text: L T L i n ü t LT1004CS8-1.2/ _ LT1004CS8-2.5 ë TECHNOLOGY Micropower Voltage References DCSCRIPTIOn F€flTUR€S • Guaranteed ±4mV initial accuracy LT1004-1.2 ■ Guaranteed ± 20mV accuracy LT1004-2.5 ■ Guaranteed 10/uA operating current
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LT1004CS8-1
LT1004CS8-2
LT1004
LT1004-1
100MA
100aiA
10kHz
100mA
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T3D05
Abstract: T3D 05 N5659A t24k A0852 CT61A LA710 d1297 ACCK PB48
Text: ä j e 3 - KNo N 5659A j -X No.5659 LA7 1 0 2 0 M- W s B ïtV T R fflW ftH l^ ffiïI Y/C Ich ip LA71020M ÌÌ, V H S ( N T S C ) # Â f ê - t f f l a f f l I C - C * $ . ÍSÉ* \¿ T * tis é 9 & m tZ )K ¡ A y - V M f fe' <fc Zf ' F M - E Q ^ tf V ^ y 7 U
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N5659A
Na56B9
LA71020Mâ
ffl31fflIC-C4>
A020M
f30kD
40M99
A08500
A08938
T3D05
T3D 05
t24k
A0852
CT61A
LA710
d1297
ACCK
PB48
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SW201G
Abstract: SW201GP SW202GP 3 DG 201 SW-202 HI201 IH201 SW-201 SW201GS
Text: Quad SPST JFET Analog Switches ANALOG DEVICES □ SW-201/SW-202 FEATURES G ENERAL D E S C R IP T IO N SW-201 T he SW-201 and SW-202 each con sist o f fo u r independent, single -po le , sin g le -th ro w SPST analog sw itches, w hich may be inde p e n d e n tly d ig ita lly co n tro lle d . Each SW-201
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SW-201/SW-202
SW-201
DG-201,
LF11201/13201,
HI201,
IH201
SW-202
LF11202/12202/13202
IH202
SW-201
SW201G
SW201GP
SW202GP
3 DG 201
SW-202
HI201
IH201
SW201GS
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LM3614
Abstract: LM75451 IM361 LM3611 LM75454 LM3613 LM3611N LM3612N LM3613N LM3614N
Text: LM3611, LM3612, LM3613, LM3614 P e r ip h e r a l/ P o w e r D r iv e r s MS LM3611, LM 36 1 2, LM 3613. LM 3614 dual peripheral drivers general descriptio n features The LM3611 series of dual peripheral drivers was designed for those applications where a higher
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LM3611,
LM3612,
LM3613.
LM3614
LM3611
LM75451
LM75454.
IM3613
IM361
LM75454
LM3613
LM3611N
LM3612N
LM3613N
LM3614N
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2SC4358
Abstract: H150
Text: Power Transistors 2S C 4358 2S C 4358 Preliminary Silicon N P N Epitaxial Planar Type Package Dim ensions V ideo Output • Feature • H igh tra n sitio n fre q u e n c y U n it * mm 4.4m ax. 10.2max. 5.7m ax. (fr) 2,9 max ^ 3.1 ± 0.1 0.5max - 1.5m ax.
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2SC4358
O-220
100iuA,
100aiA,
800MHz
2SC4358
H150
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2SK880
Abstract: No abstract text available
Text: T O S H IB A 2SK880 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK880 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS • High |Yfs| : |Yfc| = 15mS Typ. at VDS = 10V, 2.1 + 0.1 vGs=o ± 0.1 1.25 3- • High Breakdown Voltage : V q d s = —50Y
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2SK880
SC-70
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4423A
Abstract: 3SK263
Text: Ordering number: EN 4423A i 3SK263 N0.4423A N -Channel MOS Silicon FET Dual Gate SAMYO i FM Tuner, VHF Tuner, High-Frequency Amp Applications F e a tu r e s • E nhancem ent type. •Sm all noise figure. • Sm all cross m odulation. A b s o lu te M axim um R a tin g s a t Ta = 25°C
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3SK263
4423A
3SK263
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LM1808
Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.
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LM741
MIL-M-38510,
M-38510/
10101BCC.
MIL-M-38510
L-M-38510
LM1808
LM1800
TRANSISTOR LM371
ks2 6k
MC7812CP
LM3026
SN52101AJ
transistor bf 175
LM170
Germanium drift transistor
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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SW-06
Abstract: SW-06B SW06BQ SW06FQ SW06GP SW06GS 100V7
Text: Quad SPST JFET Analog Switch ANALOG DEVICES SW-06 FEATURES G E N E R A L D E S C R IP T IO N • T he SW -06 is a fo u r channel single -po le , si ng le -th ro w analog s w itch th a t em ploys both b ip o la r and io n -im p la n te d FET devices. The SW -06 FET sw itches use b ip o la r dig ita l lo g ic
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SW-06
500ns
400ns
70MHz
SW-06
SW-06B
SW06BQ
SW06FQ
SW06GP
SW06GS
100V7
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RCA 7353
Abstract: CA3098 RCA-CA3098
Text: 3A75DA1 Voltage Comparators_ CA3098 Programmable Schmitt Trigger - With Memory DD1414DD S | ““ ~ T -"73-53 D u a l-In p u t Precision Level Detectors Features: • Programmable operating current ■ M icropower standby dissipation
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3A75DA1
DD1414DD
CA3098
RCA-CA3098
CA3098H.
RCA 7353
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Ultrasonic amplifier
Abstract: No abstract text available
Text: NATL SEniCOND {DISCRETE! 6 5 0 1 130 N A T L SEMICOND, ~ 2Û DE | b 5 Q 1 1 3 D DOaSSÙ1! DISCRETE 28C 35589 Q. ^ N a tio n a l r Æj Semiconductor - ' Z f ' Z . / CM o CO CM s ¡ u o n f i f m / D w o ! 3 0 m A low noise transistors N B 0 2 3 .0 2 4 (PNP)
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NB013
N8013EV
NB023EY
NB011EY
N8011EY
NB011EY
C309N
Ultrasonic amplifier
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