100A4IS Search Results

Contextual Info: IRF510A Advanced Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V ■ Lower RDS(ON) : 0.289£l(Typ.)

Contextual Info: RHRG3070CC, RHRG3080CC, RHRG3090CC, RHRG30100CC H A R R IS / Semiconductor April 1995 File Number 3942.1 30A, 700V - 1000V Hyperfast Dual Diodes Features RHRG3070CC, RHRG3080CC, RHRG3090CC, and RHRG30100CC TA49064 are hyperfast dual diodes with soft recovery characteristics (tp p < 65ns). They have half

TP55N

Contextual Info: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high vo ltag e TMOS E -F E T is designed to withstand high energy in the avalanche mode and switch efficiently.

Contextual Info: IRF510A Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT UGF10FCT AND UGF10GCT ULTRAFAST SOFT RECOVERY RECTIFIER Reverse Voltage - 300 to 400 Volts Forward Current - 10.0 Amperes FEATURES ITO-22QAB ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0

RG911

Contextual Info: Advanced IRFW /IZ44A P o w e r M O SjflfcT FEATURES B^dss - 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology RDS on = 0 .0 2 4 0 ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175j ■ Lower Leakage Current : 10 nA (Max.) @ VOS = 60V

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: SSR/U1N50A Advanced Power MOSFET FEATURES B V DSs = 500 V • Avalanche Rugged Technology II O ■ Lower Input Capacitance CO ^DS on = ■ Rugged Gate Oxide Technology 5 .5 Î 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area D-PAK ■ Lower Leakage Current : 10 uA (Max.) @ V DS = 500V

Contextual Info: Si GEC P L E S S E Y j a n u a r y i 996 SEM IC OND UCT OR S DS4273-2.3 TF447.A FAST SWITCHING THYRISTOR KEY PARAMETERS v DRM 1200V I 470A T RMS 5000A ^TSM 200V/|XS dV/dt 500A/(iS dl/dt 20jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS. ■

1RFZ14

Abstract: AN-994 IRFZ14 IRFZ14S SMD-220 GIJ rectifier smd marking 3xf GIJ diode
Contextual Info: PD-9.507B International »»Rectifier ÌRFZ14 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ D SS- 60V R D S on - 0 .2 0 0 , lD = 10A Description

hr 4120 diode

Abstract: 75637S 75637P
Contextual Info: HUF75637P3, HUF75637S3S in te f s il D ata S h e e t O c to b e r 1999 F ile N u m b e r 4721.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-22QAB JEDEC TO-263AB • Ultra Low On-Resistance ' SOURCE DRAIN GATE rDS ON = 0-030£i. V q s - 10V

RUR30100

Abstract: RURP30100 fast recovery diode 1000v 30A
Contextual Info: RURP30100 interdi Data Sheet Ja nu a ry 2000 File N u m b e r 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery • U Itrafast with Soft • Operating Temperature. 175°C

2188A

Abstract: TT 2188
Contextual Info: MITSUBISHI Neh POWER MOSFET FS5UMH-2 HIGH-SPEED SWITCHING USE FS5UMH-2 OUTLINE DRAWING Dimensions in mm 10.5M A X . , 4.5 1.3 Jl • 2.5V DRIVE • V dss .•■■100V f' GATE D R A IN SOURCE D R A IN

diode sy 345

Abstract: T0220AB
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3055E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

Contextual Info: DCR820SG M IT E L Phase Control Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4214 - 3.4 DS4214 - 4.0 Features • Double Side Cooling. • High Surge Capability. March 1999 Key Parameters V 6500V " drm 310A Jt AV 6000A i SM dVdt* 1000V/HS dl/dt

4655M52

Contextual Info: • International gig Rectifier MA5S452 DG15SD2 TTD « I N R PD-9.756 IRFP264 INTERNATIONAL RE C T IF IE R HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements

1RFR5305

Abstract: 0V520 C401 diode
Contextual Info: International tXo r Rectifier W X V W L II II t? I • • • • • • pd9.uo2a IRFR/U5305 HEXFET Power MOSFET Ultra Low On-Resistance Surface Mount 1RFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated

Contextual Info: SSS4N90A Advanced Power MOSFET FEATURES BVdss = 900 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ^DS on = 5 .0 ■ Lower Input Capacitance lD = 2.5 A ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25jiA (Max.) @ Vos = 900V

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

pj 66 diode

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

IRF650A

Contextual Info: IR F650A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 28 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V

OM6017SA

Abstract: OM6019SA OM6020SA MOSFET POWER AMP
Contextual Info: OM6017SA OM6019SA OM6Q18SA OM6020SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel M O SFET In Herm etic Metal Package FEATURES • • • • • • Isolated Hermetic Metal Package Fast Switching L ow R DS on

SSR -100 DD

Abstract: SSR -25 DD
Contextual Info: Advanced SSR/U1N50A Power MOSFET FEATURES BVDSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-3 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ V DS = 500V

Contextual Info: Advanced SSW/I1N50A Power MOSFET FEATURES BV DSS = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = 1-5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 I^A (Max.) @ V DS = 500V