SSS4N90A Search Results
SSS4N90A Price and Stock
SSS4N90A Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SSS4N90A |
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Advanced Power MOSFET | Original | |||
SSS4N90A |
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Power MOSFETs Cross Reference Guide | Original | |||
SSS4N90A |
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Advanced Power MOSFET | Scan | |||
SSS4N90AS |
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Advanced Power MOSFET | Original | |||
SSS4N90AS |
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Power MOSFETs Cross Reference Guide | Original | |||
SSS4N90AS |
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Advanced Power MOSFET | Scan |
SSS4N90A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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L28a
Abstract: SSS4N90AS
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OCR Scan |
SSS4N90AS O-220F L28a SSS4N90AS | |
Contextual Info: SSS4N90A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ VDS= 900V Low R0S(0N) : 4.181 a (Typ.) |
OCR Scan |
SSS4N90A | |
SSS4N90ASContextual Info: SSS4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 3.7 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
Original |
SSS4N90AS O-220F SSS4N90AS | |
SSS4N90AContextual Info: SSS4N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 5.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
Original |
SSS4N90A O-220F SSS4N90A | |
Contextual Info: SSS4N90AS A d van ced Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = 900 V ^DS on = 3 . 7 £2 dss lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V |
OCR Scan |
SSS4N90AS T0-220F | |
Contextual Info: Advanced Power MOSFET SSS4N90AS FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25jjA Max. @ VDS = 900V ■ |
OCR Scan |
25jjA SSS4N90AS | |
Contextual Info: SSS4N90A Advanced Power MOSFET FEATURES BVdss = 900 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ^DS on = 5 .0 ■ Lower Input Capacitance lD = 2.5 A ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25jiA (Max.) @ Vos = 900V |
OCR Scan |
25jiA SSS4N90A | |
Contextual Info: Advanced SSS4N90A Power MOSFET FEATURES - 900 V ^DS on = 5.0 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V ■ Low RDS(ON) : 4.181 £1 (Typ.) LO Rugged Gate Oxide Technology |
OCR Scan |
SSS4N90A | |
SSS4N90ASContextual Info: SSS4N90AS P o w e r MOSFET FEATURES BV • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 25 |a.A M ax. @ V DS = 900V M Low ■ 3.054 |
OCR Scan |
SSS4N90AS SSS4N90AS | |
Contextual Info: Advanced SSS4N90AS Power MOSFET FEATURES • Lower Input Capacitance ■ Improved Gate Charge ^D S o n = 3 . 7 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V B Low Rds(0n) ■ 3.054 £1 (Typ.) 00 Rugged Gate Oxide Technology |
OCR Scan |
SSS4N90AS | |
SSS4N90A
Abstract: DIODE T53
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OCR Scan |
SSS4N90A O-220F SSS4N90A DIODE T53 | |
414 XB mosfet
Abstract: IRF 950 SSS4N90A
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OCR Scan |
SSS4N90A 414 XB mosfet IRF 950 SSS4N90A | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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OCR Scan |
SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent | |
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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Original |
F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
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OCR Scan |
SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A |