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    SSS4N90A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSS4N90A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSS4N90A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSS4N90A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    SSS4N90AS Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSS4N90AS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSS4N90AS Fairchild Semiconductor Advanced Power MOSFET Scan PDF

    SSS4N90A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSS4N90AS

    Abstract: No abstract text available
    Text: SSS4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 3.7 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 900V


    Original     		PDF SSS4N90AS O-220F SSS4N90AS

    SSS4N90A

    Abstract: No abstract text available
    Text: SSS4N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 5.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 900V


    Original     		PDF SSS4N90A O-220F SSS4N90A

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    L28a

    Abstract: SSS4N90AS
    Text: SSS4N90AS Advanced Power MOSFET FEATURES BV • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jjA Max @ VDS= 900V ■ Low Rq^ on, : 3.054 £2 (Typ.)


    OCR Scan     		PDF SSS4N90AS O-220F L28a SSS4N90AS

    Untitled

    Abstract: No abstract text available
    Text: SSS4N90A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ VDS= 900V Low R0S(0N) : 4.181 a (Typ.)


    OCR Scan     		PDF SSS4N90A

    Untitled

    Abstract: No abstract text available
    Text: SSS4N90AS A d van ced Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = 900 V ^DS on = 3 . 7 £2 dss lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V


    OCR Scan     		PDF SSS4N90AS T0-220F

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power MOSFET SSS4N90AS FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25jjA Max. @ VDS = 900V ■


    OCR Scan     		PDF 25jjA SSS4N90AS

    Untitled

    Abstract: No abstract text available
    Text: SSS4N90A Advanced Power MOSFET FEATURES BVdss = 900 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ^DS on = 5 .0 ■ Lower Input Capacitance lD = 2.5 A ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25jiA (Max.) @ Vos = 900V


    OCR Scan     		PDF 25jiA SSS4N90A

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSS4N90A Power MOSFET FEATURES - 900 V ^DS on = 5.0 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V ■ Low RDS(ON) : 4.181 £1 (Typ.) LO Rugged Gate Oxide Technology


    OCR Scan     		PDF SSS4N90A

    SSS4N90AS

    Abstract: No abstract text available
    Text: SSS4N90AS P o w e r MOSFET FEATURES BV • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 25 |a.A M ax. @ V DS = 900V M Low ■ 3.054


    OCR Scan     		PDF SSS4N90AS SSS4N90AS

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSS4N90AS Power MOSFET FEATURES • Lower Input Capacitance ■ Improved Gate Charge ^D S o n = 3 . 7 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V B Low Rds(0n) ■ 3.054 £1 (Typ.) 00 Rugged Gate Oxide Technology


    OCR Scan     		PDF SSS4N90AS

    SSS4N90A

    Abstract: DIODE T53
    Text: SSS4N90A A d va n ce d Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 jiA (Max.) @ VDS = 900V


    OCR Scan     		PDF SSS4N90A O-220F SSS4N90A DIODE T53

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640

    SSD2104

    Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
    Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A