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    100NS Search Results

    100NS Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    MC28F008-10 Rochester Electronics LLC 28F008 - Flash, 1MX8, 100ns, CDIP40 Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC 28F008 - Flash, 1MX8, 100ns, CDIP40 Visit Rochester Electronics LLC Buy
    MF28F008-10 Rochester Electronics LLC 28F008 - Flash, 1MX8, 100ns, CDFP42 Visit Rochester Electronics LLC Buy
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    100NS Price and Stock

    JRH ELECTRONICS DP100NS

    NS TRANSLUCENT EPOXY 1.7 FL OZ
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    DigiKey DP100NS Bulk 2
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    3M Interconnect DP100NS

    NS TRANSLUCENT EPOXY 1.7 FL OZ
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    Bivar Inc BP3100-N-S

    LED LIGHT BAR STD 4500K 12" ALUM
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    Mouser Electronics BP3100-N-S
    • 1 $28.96
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    Sharp Microelectronics of the Americas PC81100NSZ

    OPTOISOLATOR 5KV 1CH TRANS 4-DIP
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    DigiKey PC81100NSZ Tube 2,000
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    3M Interconnect TAC100-NS-8

    PELTORSPORT TACTICAL 100 ELECTRO
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    DigiKey TAC100-NS-8 Bulk 8
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    Avnet Americas TAC100-NS-8 Bulk 2 Weeks, 3 Days 8
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    100NS Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100NS10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NS100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NS120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NS140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NS160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NS20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NS40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NS60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NS80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NSR10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NSR100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NSR120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NSR140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NSR160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NSR20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NSR40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NSR60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NSR80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=100A Original PDF
    100NS-TRANS-5G-PARTA 3M Interconnect SCOTCH-WELD EPOXY ADHESIVE 1 Original PDF

    100NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1r5nu41

    Abstract: No abstract text available
    Text: SILICON D IFFUSED T Y P E S U P E R FA ST R E C O V E R Y RECTIFIER 1R5NU41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS. . Repetitive Peak Reverse Voltage : V r r >i=1C00V . Average Forward Current : Ip AV =1.5A . Very Fast Reverse-Recovery Time : trr=100ns


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    1R5NU41 1C00V 100ns 1r5nu41 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON DIFFUSED TYPE RECTIFIER 1JU42 HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY . Average Forward Current : If (AV)=1.0A . Repetitive Peak Reverse Voltage : V r r h =600V . Reverse Recovery Tine : trr=100ns(Max.) . Plastic Mold Type. MAXIMUM RATINGS


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    1JU42 100ns -30A/fis PDF

    28F512A

    Abstract: 28F512A-12
    Text: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible TMS28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns28F512A-12


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    SMJS514C-FEBRUARY TMS28F512A 28F512A-10 100ns 28F512A-12 120ns 28F512A-15 150ns 28F512A-17 170ns 28F512A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1GU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1GU42 Unit: mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY z Average Forward Current : IF (AV) = 1.0A z Repetitive Peak Reverse Voltage : VRRM = 400V z Reverse Recovery Time : trr = 100ns (Max) z Plastic Mold Type.


    Original
    1GU42 100ns PDF

    8X13

    Abstract: No abstract text available
    Text: tm TE CH Preliminary T15S256A CMOS STATIC RAM SRAM 32K X 8 LOW POWER FEATURES GENERAL DESCRIPTION ¡EHigh speed access time: 50/70/85/100ns The T15S256A is a low power and low voltage CMOS static RAM. organized as 32,768 x 8 bits that operates on a 1.2V to 1.8V power supply. Data


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    T15S256A 50/70/85/100ns T15S256A 28-pin 8X13 PDF

    14Q7

    Abstract: No abstract text available
    Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


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    K3P4C1000D-D /512Kx16) 100ns K3P4C1000D-DC 42-DIP-600 K3P4C1000D-GC 44-SOP-600 K3P4C1000DD 14Q7 PDF

    SRM20100LRM70

    Abstract: No abstract text available
    Text: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic


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    SRM20100l_ 70ns/85ns/100ns SRM201 7o/85/ic SRM20100L SRM20100L85. SRM20100Lio. SRM20100L70/85/10 SRM201OOL70/85/1 OP6-32pin SRM20100LRM70 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON DIFFUSED TYPE SUPER FAST RECOVERY RECTIFIER U05NU44 SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetivier Peak Reverse Voltage : Vrrji=1000V . Average Forward Current p : If a V =0.5A . Very Fast Reverse-Recovery Time : trr=100ns(Max.)


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    U05NU44 100ns 50Ilz) PDF

    PDM31096

    Abstract: PDM31096LL
    Text: PDM31096LL PRELIMINARY 512K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31096LL Active: 65 mW Standby: 10µW The PDM31096LL is a very low power CMOS static RAM organized as 524,288 x 8 bits. Writing to this


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    PDM31096LL PDM31096LL 100ns 32-pin PDM31096 512Kx8) PDF

    j515

    Abstract: J515-5
    Text: n - n x V 'C X - Y Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S S20L60 600V 20A •h iîjï • t r r 100ns • ejcô'/JvïïU m m •P F C •S R S ÎÜ •^ B s O A .F A R A TIN G S Absolute Maximum Ratings a i 5 E - fSymbol Conditions


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    S20L60 100ns 50HziE5K 50HzjE J515-5 j515 J515-5 PDF

    1JU41

    Abstract: No abstract text available
    Text: TOSHIBA 1JU41 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1JU41 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • Average Forward Current ÏF (AV) —1-OA • Repetitive Peak Reverse Voltage V r r m = 600V • Reverse Recovery Time trr= 100ns (Max.)


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    1JU41 100ns 30X30mm 20X20mm 10x10mm PDF

    Untitled

    Abstract: No abstract text available
    Text: PDM31024LL PRELIMINARY 128K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31024LL Active: 50 mW Standby: 2µW The PDM31024LL is a very low power CMOS static RAM organized as 131,072 x 8 bits. Writing to this


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    PDM31024LL PDM31024LL 100ns 32-pin PDM31024 128Kx8) PDF

    82S185

    Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
    Text: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: N82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: N82S184/185: -100MA max S82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector


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    82S184-I 82S185-I 82S184 82S185 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185 PDF

    2SK1331

    Abstract: No abstract text available
    Text: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2


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    2SK1331 100ns b132fi52 Q017174 2SK1331 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


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    UT7Q512 100ns 30krads 300krads 32E-8 0E14n/cm2 32-lead 36-lear 36-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet June 30, 1999 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


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    UT7Q512 100ns 30Krad 100Krad 0E14n/cm2 32-lead 100ns 7Q512) PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Preliminary Data Sheet November 21, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


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    UT7Q512 100ns 30krad 300krad 32E-8 0E14n/cm2 0E11pped 36-lead 32-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


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    UT7Q512 100ns 30krads 300krads 32E-8 0E14n/cm2 32-lead 36-lead PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT7130SA/LA IDT7140SA/LA CMOS DUAL-PORT RAM 8K 1Kx 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/35/55/100ns (max.) —Commercial: 25/35/55/100ns (max.) —Commercial: 20ns 7130 inPLCC and TQFP • Low-power operation


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    IDT7130SA/LA IDT7140SA/LA 25/35/55/100ns IDT7130/IDT7140SA 550mW IDT7130/IDT7140LA IDT7130 16-or-more-bits PDF

    Untitled

    Abstract: No abstract text available
    Text: J ] H A R R IS R T X 2 1 A PRELIMINARY Real Time Express™ Microcontroller Decem ber 1989 Features • Description Fast 100ns Machine Cycle The RTX 2001A is a 16-bit microcontroller which is particu­ larly well suited for very high speed control tasks which are


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    100ns 16-bit PDF

    dt7130

    Abstract: No abstract text available
    Text: INTEGRATE» DEVICE k& E D • MÖ25771 GGia^? SSb ■ IDT IDT7130SA/LA IDT7140SA/LA C M O S D U A L -P O R T RAM 8K 1K x 8-B IT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/35/55/100ns (max.) — Commercial: 25/35/55/100ns (max.)


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    IDT7130SA/LA IDT7140SA/LA 25/35/55/100ns IDT7130/IDT7140SA 325mW IDT7130/IDT7140LA IDT7130 16-or-more-bits dt7130 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT7130SA/LA 1DT7140SA/LA CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) —Commercial: 20/25/30/35/45/55/70/90/100ns (max.) • Low-power operation


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    IDT7130SA/LA 1DT7140SA/LA 25/30/35/45/55/70/90/100/120ns 20/25/30/35/45/55/70/90/100ns IDT7130/IDT7140SA 325mW IDT7130/IDT7140LA IDT7130 16-or-more-bits PDF

    6264alp

    Abstract: 6264ALSP-10
    Text: HM6264A Series 8192-word x 8-bit High Speed CMOS Static RAM i FEATURES H M 6264A P Series » Low Power Standby Standby: 0.1mW typ. 10/LtW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120rts/150ns (max.) Low Power Operation • Fast access Time •


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    HM6264A 8192-word 10/LtW 15mW/MHz 100ns/120rts/150ns DP-28) HM6264ASP 6264AP-10 HM6264AP-12 HM6264AP-15 6264alp 6264ALSP-10 PDF

    idt7130

    Abstract: No abstract text available
    Text: IDT7130SA/LA IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/35/55/100ns max. — Commercial: 25/35/55/100ns (max.) — Commercial: 20ns 7130 in PLCC and TQFP


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    IDT7130SA/LA IDT7140SA/LA 25/35/55/100ns IDT7130/IDT7140SA 550mW IDT7130/IDT7140LA IDT7130 16-or-more-bits PDF