transistor 2SK1603
Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all
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OT-89,
T0-220
2SK1488
2SK1865SM
2SK1531
2SK1745
2SK2057
2SK1544
O-220AB
2SK1723
transistor 2SK1603
2SK1603
2SK1118
transistor 2sk1723
MOSFET 2SK1358 Transistor Guide
2sk16
packages TYPES FOR MOSFET
toshiba transistor smd code
2sk1358
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smd 1gw
Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Text: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N
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DO-15
DO-41
DO-201AD
S5277B
S5566B
S5688B
U1BC44
1S1885A
1R5BZ41
smd 1gw
diode Z47
1ZB36
1ZB20 zener
U1DL49
1ZB20
6B4B41
FAST RECOVERY DIODE 200ns 2a
1B4B41
J2C42
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Untitled
Abstract: No abstract text available
Text: 2NH45 SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : VRRf.j=1000V . Average Forward Current : If AV =2.0A . Very Fast Reverse-Recovery Time : trr=200ns(Max.) MAXIMUM RATINGS
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2NH45
200ns
C60Hz)
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Untitled
Abstract: No abstract text available
Text: AG303-63 InGaP HBT Gain Block Product Description Product Features • • • • • • • • DC – 6000 MHz 20.5 dB Gain @ 900 MHz +14 dBm P1dB @ 900 MHz +26 dBm OIP3 @ 900 MHz Single Voltage Supply Internally matched to 50 Ω Robust 1000V ESD, Class 1C
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AG303-63
OT-363
AG303-63
AG30per
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: 1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5NH41 SWITCHING MODE POWER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage: VRRM = 1000V • Average Forward Current: IF AV = 1.5A • Very Fast Reverse Recovery Time: trr = 400ns (Max)
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1R5NH41
400ns
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MMIC marking CODE c4
Abstract: No abstract text available
Text: ECG055C InGaP HBT Gain Block Product Features • 20 dB Gain @ 1 GHz • +18 dBm P1dB @ 1 GHz GND 4 RF In RF Out 3 1 • +34 dBm OIP3@ 1 GHz • Single Voltage Supply • 3.4 dB Noise Figure • Internally matched to 50 Ω • Robust 1000V ESD, Class 1C • Lead-free/green/RoHS-compliant
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ECG055C
OT-363
ECG055C
MMIC marking CODE c4
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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KBU2510
Abstract: KBU25005 KBU2504
Text: KBU25005 thru KBU2510 REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 25.0 Amperes SILICON BRIDGE RECTIFIERS KBU FEATURES ●Surge overload rating -400 amperes peak .157 4.0 *45° ●Ideal for printed circuit board .935(23.7) .895(22.7) ●Reliable low cost construction utilizing
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KBU25005
KBU2510
1000Volts
KBU2510
KBU2504
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TKA30B-B
Abstract: TKA30A-B TKA30A-C TKA30C-B TKA30C-C
Text: TKA30 25W DC-DC Triple Output Converter series Features : 2:1 wide input range 4:1 wide input range option 1000VDC I/O isolation Built-in EMI filter Remote ON-OFF control Protections: Short circuit / Overload Cooling by free air convection Six-sided shield metal case
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TKA30
1000VDC
TKA30A-B
TKA30B-B
TKA30C-B
TKA30A-C
TKA30B-C
TKA30C-C
3500mA
310mA
TKA30B-B
TKA30A-B
TKA30A-C
TKA30C-B
TKA30C-C
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MP1008
Abstract: IR326 IR 326 MP10 mp1008 ic MP1006 MP1010 MP10005 MP1001 MP1002
Text: MP10005 thru MP1010 REVERSE VOLTAGE FORWARD CURRENT SILICON BRIDGE RECTIFIERS - 50 to 1000Volts 10.0 Amperes MP8 FEATURES METAL HEAT SINK ● Surge overload rating -240 amperes peak .307 7.8 .267(6.8) ● Low forward voltage drop ● Small size; simple installation
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MP10005
MP1010
1000Volts
MP1008
IR326
IR 326
MP10
mp1008 ic
MP1006
MP1010
MP1001
MP1002
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47uf/100v
Abstract: capacitor 1000uf 12v
Text: NSD05-S 5W DC-DC Regulated Single Output series Features : Wide 4:1 DC input range Protections: Short circuit / Overload / Over voltage 1000VDC I/O isolation Cooling by free air convection Built-in remote ON-OFF control 100% full load burn-in test Low cost
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NSD05-S
1000VDC
NSD05-12S5
NSD05-12S12
NSD05-12S15
NSD05-48S3
NSD05-48S5
NSD05-48S12
NSD05-48S15
NSD05-12S3
47uf/100v
capacitor 1000uf 12v
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kbu 1506
Abstract: kbu 1504 kbu 1510 KBU1510 kbu 1508 kbu 1502 KBU15005 kbu1508 kbu1506 kbu1502
Text: KBU15005 thru KBU1510 REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 15.0 Amperes SILICON BRIDGE RECTIFIERS KBU FEATURES ●Surge overload rating -300 amperes peak .157 4.0 *45° ●Ideal for printed circuit board .935(23.7) .895(22.7) ●Reliable low cost construction utilizing
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KBU15005
KBU1510
1000Volts
kbu 1506
kbu 1504
kbu 1510
KBU1510
kbu 1508
kbu 1502
kbu1508
kbu1506
kbu1502
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Untitled
Abstract: No abstract text available
Text: KBP2005G thru KBP210G REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 2.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS KBP FEATURES ●Surge overload rating -60 amperes peak .118X45° 3.0 ●Ideal for printed circuit board .600(15.24) .560(14.22) .500(12.70)
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KBP2005G
KBP210G
1000Volts
118X45°
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 6 7 8 9 A A SPECIFICATIONS Voltage Rating: Current Rating: Contact Resistance: Insulation Resistance: Withstanding: Pin Header: Housing: Temperature Range: Max Soldering: B 300V 8A 20mΩ 5000MΩ/1000V AC2000V/1min Brass, Tin Plated PA66, UL94V-0
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5000Mâ
/1000V
AC2000V/1min
UL94V-0
ME030
CMTB-ME030-350-XX-GN
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Untitled
Abstract: No abstract text available
Text: APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTM100UM65SCAVG
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Untitled
Abstract: No abstract text available
Text: LOW PROFILE D-SUB. CONNECTOR I.D.C. TYPE WITH METAL SHELL & THROUGH HOLES SPECIFICATIONS Current Rating: 3.0 Ampere Contact Resistance: 25mΩ Max. Insulation Resistance: 1000MΩ Min. at 500V Dielectric Voltage: 1000V at 1 Minute Operating Temperature: -55ºc to +105ºc
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1000MÎ
UL94V-0
5251L-xxMx1
5252L-xxMx1
C0023
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digital multimeter
Abstract: IEC-1010-1 multimeter IEC1010-1 PRO-50A Global Specialties transistor 1000V IEC-1010 ac diode 1000V 6F22 9V
Text: Test Equipment Digital Multimeter Model PRO-50A Hand-Held Digital Multimeter The Global Specialties Model PRO-50A is a highly versatile, economicallypriced, hand-held digital multimeter. Designed to meet CAT III 1000V and CAT IV (600V) safety standards,
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PRO-50A
IEC1010-1,
200m/2/20/200/1000V,
2/20/200/750V,
20m/200m/10A,
digital multimeter
IEC-1010-1
multimeter
IEC1010-1
Global Specialties
transistor 1000V
IEC-1010
ac diode 1000V
6F22 9V
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Untitled
Abstract: No abstract text available
Text: Fuse Block 441-4454 Date Last Revised: 10-20-05 .91 .61 .28 .43 .12 1.30 .94 .63 .12 .16 .31 ø.13 ø.24 ø.06 .31 Dimensions: In. SPECIFICATIONS Rated power: 125V 6A Withstand voltage: 1000VAC for 1 minute Insulation resistance: 100MΩ min. @ 500VDC Mold stopper:
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1000VAC
500VDC
EPD-200200
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110-BP
Abstract: 110-P 110-SP 110-PBM-OFF 110-PBM-ON
Text: 641/110P-Series Pushbutton Switches Dielectric Strength UL/CSA: 1000V - live to dead metal & opposite polarity Electrical Life 100,000 cycles Mechanical Life 25,000 cycles Operating Temperature 32°F to 185°F 0°C to +85°C 641/110P-Series Pushbutton Switches
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641/110P-Series
110-SERIES
250VAC,
125VAC,
110-P
110-BP
110-SP
111-16-P
110-P-TABS
110-BP
110-P
110-SP
110-PBM-OFF
110-PBM-ON
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR DF04MH thru DF10MH REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 1.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES DF-M Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.
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DF04MH
DF10MH
E95060
300us
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GBU1506
Abstract: GBU1508 gbu 1506 gbu 1506 rectifier GBU 1508 GBU1510 GBU1504
Text: LITE-ON SEMICONDUCTOR GBU1504 thru GBU1510 REVERSE VOLTAGE - 400to 1000 Volts FORWARD CURRENT - 15 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBU FEATURES Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic
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GBU1504
GBU1510
400to
E95060
300us
GBU1506
GBU1508
gbu 1506
gbu 1506 rectifier
GBU 1508
GBU1510
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GBJ8005
Abstract: GBJ801 GBJ802 GBJ804 GBJ806 GBJ808 GBJ810
Text: LITE-ON SEMICONDUCTOR GBJ8005 thru GBJ810 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 8.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBJ FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.
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GBJ8005
GBJ810
E95060
300us
01-Dec-2000,
KBDG02
GBJ801
GBJ802
GBJ804
GBJ806
GBJ808
GBJ810
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W005G
Abstract: W01G W02G W04G W06G W08G W10G
Text: LITE-ON SEMICONDUCTOR W005G thru W10G GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes WOG FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability. Reliable low cost construction utilizing molded epoxy
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W005G
E95060
300us
08-Mar-2002,
KBDD01
W01G
W02G
W04G
W06G
W08G
W10G
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APT0406
Abstract: APT0502 APTM100DA33T1G
Text: APTM100DA33T1G VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 23A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
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APTM100DA33T1G
APT0406
APT0502
APTM100DA33T1G
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