100 N 37 TRANSISTOR Search Results

STK9N10

Abstract: transistor DI 468 circuit diagram application TRANSISTOR b72 100VDS
Contextual Info: • 7*^837 0G4bDbfl 37^ ■ S G T H _ r z 7 SCS-THOMSON STK9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK9N10 > ■ . . . . . . V dss 100 V R D S o n < 0.3 Id n 9A TYPICAL RDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: International S Rectifier Provisional Data Sheet No. PD-9.1417 IRFN3710 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL Product Summary 100 Volt, 0.028£2, HEXFET Part Number B V dss RDS on Id IR F N 37 10 100 V 0 .0 2 8 Q 45A Generation 5 H E X F E T s from International Rectifier

IRF 9110

Abstract: FR9110 FU9110 IRFR9111
Contextual Info: HE INTERNATIONAL RECTIFIER D | MÖS5452 QQQÖ324 7 | Data Sheet No. PD-9.519B T-37-25 IOR INTERNATIONAL- RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9110 IRFRS111 IRFU9110 IRFU9111 P -C H A N N E L Product Summary -100 Volt, 1.2 Ohm HEXFET

Contextual Info: IRF520 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)9.2# I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)37# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55õ

pj 88 diode

Abstract: pj 59 diode irfu9120 pj 84 diode IRFR9120 irfr 9120 irfu9121 IRFR9121 irff* p-channel hexfet C82 diode
Contextual Info: HE D | MflSSMSS Q0Qfl332 fc» | Data Sheet No. PD-9.520B INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9120 IRFR9121 IRFUS120 IRFU0121 P -C H A N N E L -100 Volt, 0.60 Ohm HEXFET

UNITRODE TRANSISTORS

Abstract: F-111
Contextual Info: ^5 UNITRODE CORP □D1GÛ21 7 T ~ Ô347963 UNITRODE CORP 92 D 10821 D/ -37-0 UFNF110 UFNF111 U F N F I 12 u fn fiis POWER MOSFET TRANSISTORS 100 Volt, 0.60 Ohm N-Channel D E S C R IP T IO N The Unltrode power M O S F E T d esign utilizes the m ost advanced technology available.

STH65N05

Abstract: STH65N05FI 65260a
Contextual Info: STH65N05 STH65N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH65N05 STH65N05FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.02 Ω < 0.02 Ω 65 A 37 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

BUZ172

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 172 • P channel • Enhancement mode • Avalanche rated Type v DS BUZ172 - 100 V —5.5 A ^DS on Package 1> Ordering Code 0.6 TO-220 AB C67078-A1451-A2 n Maximum Ratings Parameter Symbol Tc = 37 "C Tc = 25 "C Continuous drain current,

Contextual Info: IRF521 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)9.2# I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)37# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55õ

Motorola 4N35

Abstract: 4n36 motorola
Contextual Info: MOTOROLA Order this document by 4N35/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL CSA ® SETI SEM K O DEMKO NEMKO BABT G lobalO ptoisolator 6-P in DIP Optoisolators Transistor Output 4N 35* 4N 36 4N 37 [C T R = 100% Min] T he 4N 35, 4N 36 and 4 N 3 7 d e vice s co n sist o f a ga llium arsenide infrared

ECG1900

Abstract: ECG116 Transistor 123AP 123AP ad 4606 SI 4606 10MF
Contextual Info: PHILIPS 17E E C G INC ^53=126 GOGSbOa S T -5 8 -1 1 -2 3 ECG1900 Positive VR, 3 Terminal, Adjustable S e m ic o n d u c to rs .200 " - 5 .0 8 -) DIA. Features • Output current 100 rnA • Output adjustable between 1.2 V and 37 V • Internal thermal overload protection

D44C3

Abstract: saia
Contextual Info: NATL SEMICOND This Material DISCRETE HE D | t S D 1 1 3 D „□□3 ?lfl3 b | C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r T - 3 3 'Oi This NPN Bipolar Power Transistors Continued 45 5 10* 55 25 10 D44C5 TO-220 (37) 45 5 100

Contextual Info: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage

2SC3586

Abstract: NE68000 2SC3585 NE68035 2SC3587 NE68033 NE680 NE68037 epitaxial micro-x IE68C
Contextual Info: N E C / S 1SE CALIFORNIA E D • 1=427414 QDG143b b tsh t NE68000 NE68033 NE68035 NE68037 NPN SILICON HIGH FREQUENCY TRANSISTOR C FEATURES DESCRIPTION AND APPLICATIONS • HIG H GAIN BANDW IDTH PRODUCT: fr = 10 GHz The NE680 series o f NPN epitaxial silicon transistors is

The 8002 Amplifier IC

Abstract: 8002 Amplifier IC t4 and 0570 2N3741 New England Semiconductor 2n3741 IC 8002 2N3740 2N3766 2N3741A 2N3767
Contextual Info: 2N3740* 2N3741* 2N3741A *also available as JA N , JA N TX , JA NTXV MEDIUM-POWER PNP TRANSISTORS .ideal for use as drivers, switches and medium-power amplifier application. These devices feature: • • • • • POWER TRANSISTOR PNP SILICON 60 - 80 VOLTS

2N3798

Abstract: 2N3799 MPQ3798 MPQ3799 RNW transistor
Contextual Info: MPQ3798 silicon MPQ3799 QUAD DUAL-IN-LINE PNP SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL-IN LINE PNP SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, low-noise amplifier applications. • DC Current Gain Specified - 10/jA dc to 10 mAdc h fE = 1^0 (Min) @ lc = 500 jjAdc — MPQ3798

2SC3584

Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
Contextual Info: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for

NEC NE85635

Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 NE856 sot23 41 NE85635
Contextual Info: NEC NE C / CALIFORNIA 5 L .E J> b457414 000240^ NPN SILICON HIGH FREQUENCY TRANSISTOR 437 M N E C C NE856 S ER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH P R O D U C T : fr = 7 G H z The N E856 series of NPN epitaxial silicon transistors is

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

al 232 nec

Abstract: NE64400 NE644 NE64408 S21E
Contextual Info: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors

darlington opto coupler

Abstract: FCD850 FCD850C FCD855 FCD855C opto 4N33
Contextual Info: CouplersTransistor Output Cont’d Max Ratings (a! TA 25°C Diode Transistor ic VCEO V Vr V mA V iso kV 1.5 Device No. PD mW ÏIL111 ! TIL112 TIL114 « TIL115 TIL116 TIL117 TIL118 250 — 30 3.0 100 250 — 20 3.0 100 1.5 250 — 30 3.0 100 2.5 250 — 20

2SC2407 equivalent

Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The

2SC2570

Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­