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    10-35 L2 Datasheets Context Search

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    2001 ka 7542

    Abstract: No abstract text available
    Text: Tables of Resistance vs Temperature T °C - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 - 10 -5 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 T (°C) -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 5 10 15


    Original     		PDF

    P4C422

    Abstract: No abstract text available
    Text: P4C422 HIGH SPEED 256 X 4 STATIC CMOS RAM FEATURES High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) CMOS for Low Power – 495 mW Max. – 10/12/15/20/25 (Commercial) – 495 mW Max. – 15/20/25/35 (Military)


    Original     		PDF P4C422 22-Pin 24-Pin P4C422 024-bit SRAM101 Oct-2005

    Memory

    Abstract: FT6164
    Text: FT6164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF FT6164 28-Pin 100ns) 32-Pin Memory FT6164

    Untitled

    Abstract: No abstract text available
    Text: FT6164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF FT6164 FT6164L 28-Pin 100ns)

    P4C164

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K X 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) 32-Pin P4C164

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K X 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) 32-PiIGH

    Memory

    Abstract: FT6264(L)
    Text: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF FT6264 28-Pin 100ns) 32-Pin Memory FT6264(L)

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns)

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns)

    FT6264

    Abstract: 25l32
    Text: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF FT6264 FT6264L 28-Pin 100ns) 25l32

    15FMB

    Abstract: No abstract text available
    Text: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF FT6264 FT6264L 28-Pin 100ns) 15FMB

    100DM

    Abstract: 1519B P4C164 P4C164L
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 28-Pin 100ns) 32-Pin 100DM 1519B P4C164 P4C164L

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns)

    P4C164

    Abstract: P4C164L
    Text: P4C164 ULTRA HIGH SPEED 8K X 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) SRAM115 P4C164

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) 536-bit

    Untitled

    Abstract: No abstract text available
    Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)


    Original     		PDF P4C164 P4C164L 28-Pin 100ns) P4C164 536-bit

    901916

    Abstract: 901919 900441 900443 902-575 HO-25 902-105
    Text: Ferrules Ferrules, insulated Nominal wiresize mm2 AWG 0.25 24 0.25 0.34 24 22 22 0.34 0.5 0.5 0.5 0.75 0,75 0.75 0.75 1 1 1 1 1.5 1.5 1.5 2.5 2.5 2.5 4 4 4 6 6 10 10 16 16 25 25 35 35 50 20 20 20 Dimensions(mm) L1 L2 d1 10 12 10 12 12 14 18 18 16 12 14 18


    OCR Scan     		PDF H4/22 901916 901919 900441 900443 902-575 HO-25 902-105

    10M45s

    Abstract: IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35
    Text: High Voltage Current Regulators C urrent Regulator Non switchable regulators BV*DS *0 P min. typ. V mA 350 10 20 35 Switchable regulators 450 TO-251 AA TO -220 AB TO -252 AA ,2 ’ - 0 12 3 3 IXCP 10M 35 IXCP 20M 35 IXCP 35M 35 IXCU 10M35 IXCU 20M 35 IXC U 35M35


    OCR Scan     		PDF O-251 10M45S 10M35 35M35 10M45s IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35

    in4818

    Abstract: in4003 IN5399 IN4005 in5054 IN4007 IN4820 in4002 IN5392 IN4822
    Text: r GENERAL PURPOSE RECTIFIERS CASE 1 AMP PART N UM BER V rrm V rsm I RRM •o* @ T a V (V) (JUA) (A) <°C) IFS M @ 60Hz (A) l2t (A 2-Sec.) V fm (V) @ lF (A) D015 IN4001 50 100 10 1.0 75 35 5 1 1 D015 IN4002 100 200 10 1.0 75 35 5 1 1 D015 IN4003 200 300 10


    OCR Scan     		PDF IN4001 IN4002 IN4003 IN4004 IN4005 IN4006 IN4007 IN4816 IN48jl7 IN4818 IN5399 in5054 IN4820 IN5392 IN4822

    L70MO5

    Abstract: L7875 L7805C L261
    Text: FIXED VOLTAGE REGULATORS 500 28a 1% 10 TO 250 5 8 TO 18 -25. +150 L2605 500 35* 0.3% 50 T O 500 2 12 TO 16 -55. +150 TO-220 8 TO 25 0, +150 T O -220 TO -126 1 10 AVo (mV) Vi (V) L70MO5 500 35 20 5 TO 500 1 L129 850 20 0.3% 10 TO 600 5 7.5 TO 12 -20, +150


    OCR Scan     		PDF L2605 L70MO5 L7805 L7805C L78S05 L76S05C O-220 O-22C TQ-22C L7875 L261

    Untitled

    Abstract: No abstract text available
    Text: VITELIC V51C64 FAMILY HIGH PERFORMANCE LOW POWER 65,536x1 BIT CMOS DYNAMIC RAM V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 100 160 35 100 160 35 120 190 45 120 190 45 150 245 55 150 245 55 Maximum Access Time ns Minimum Cycle Time (ns)


    OCR Scan     		PDF V51C64 536x1 V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 V51C64L

    Untitled

    Abstract: No abstract text available
    Text: VITELIC CORP A3 'ÌSDS310 00ODI11 □ i ~ 9502310 VITELIC CORP V IT E L IC 83P 00111 0 7 - V51C64 FAMILY HIGH PERFO RM AN CE LOW POWER 65,536x1 BIT CMOS DYNAMIC RAM V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15 100 160 35 100 160 35 120 190


    OCR Scan     		PDF SDS310 00ODI11 V51C64 536x1 V51C64-10 V51C64L-10 V51C64-12 V51C64L-12 V51C64-15 V51C64L-15

    2506L

    Abstract: ER35L br 3510L BR35L bridge rectifier br 3510l 1508L 1006L R35L br 2508l 1506L
    Text: BR-L 10A/15A/25A/35A SERIES Voltage Range 50 to 1000 Volts Current 10/15/25/35 Amperes SINGLE PHASE 10/15/25/35 AMPS, SILICON BRIDGE RECTIFIERS BR-L M E TA L H EAT SINK EPOXY CASE FEATURES • Plastic case with heatsink for heat dissipation .140 3.6 .120(3.05)


    OCR Scan     		PDF 1OA/15A/25A/35A BR35L 2506L ER35L br 3510L BR35L bridge rectifier br 3510l 1508L 1006L R35L br 2508l 1506L