10 N J 400 V Search Results

10 N J 400 V Result Highlights (5)

Part	Manufacturer	Description
CR2AS-8UE-T13#B00	Renesas Electronics Corporation	400V - 2A - Thyristor Low Power Use
CR3AS-8UE-T13#B00	Renesas Electronics Corporation	400V - 3A - Thyristor Medium Power Use
CR3AS-8UE-T23#B00	Renesas Electronics Corporation	400V - 3A - Thyristor Medium Power Use
CR5AS-8UE-T23#B00	Renesas Electronics Corporation	400V - 5A - Thyristor Medium Power Use
CR05AS-8-T14#F01	Renesas Electronics Corporation	400V - 0.5A - Thyristor Low Power Use

10 N J 400 V Price and Stock

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Vishay Intertechnologies VR25000001005JN400 Metal Film Resistors - Through Hole VR25 5% N4 10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	VR25000001005JN400					1 $0.46 10 $0.357 100 $0.15 1000 $0.083 10000 $0.068	Get Quote
Carling Technologies VVA9CNJ-100 Rocker Switches VVA9CNJ-100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	VVA9CNJ-100					1 $3.76 10 $3.37 100 $2.9 1000 $2.41 10000 $2.32	Get Quote
Carling Technologies V4D1DNN1-J4400-000 Rocker Switches V4D1DNN1-J4400-000
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	V4D1DNN1-J4400-000					1 $24.7 10 $21.65 100 $20.29 1000 $19.67 10000 $19.67	Get Quote
Power Integrations 1SP0335V2M1-5SNA0400J650100 Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with versatile link, generic version
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0335V2M1-5SNA0400J650100					1 - 10 $218.3 100 $211.59 1000 $211.59 10000 $211.59	Get Quote
Power Integrations 1SP0335V2M1C-5SNA0400J650100 Gate Drivers Gate Driver ONLY for 5SNA0400J650100 conformal coated module
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0335V2M1C-5SNA0400J650100					1 - 10 $292.9 100 $283.89 1000 $283.89 10000 $283.89	Get Quote

Find more 10 N J 400 V price and stock on Findchips.com

10 N J 400 V Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ISS380 Abstract: 400-02F sm 2025 Text: MegaMOSTMFET Module VMO 400-02F VDSS ID25 RDS on = 200 V = 418 A Ω = 4.2 mΩ 11 1 N-Channel Enhancement Mode 2 10 1 11 Preliminary data 10 2 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ	Original	400-02F ISS380 sm 2025	PDF
RCR70BY-10 Abstract: RCR70BY-8 RCR70BY RCR70BY-12 Text: 104 - - m h RCR70BY t - r m m i i 20.«s V m i- M V . 7V= 125‘C, * * # 14-:? 7 7, 10, i 2 ! i t s » â j . n u » « uC TT RCR70BY 4 RCR70BY 6 RCK70BY-8 RC R70BY-10 RCR70BY-I2 V7j aAf 240 360 480 600 720 Vdrm 200 300 400 500 600 Vn.no 160 240 320 400	OCR Scan	RCR70BY RCR70RY RCR70BY-8 RCR70BY-10 RCR70BY-12 7W25X, H-101 RCR70BY-12	PDF
TIP540 Abstract: TIP539 tca150c bdx 540 2N3440 TIP538 BUY71 TIP-540 bdx 65c Text: TYPES TIP538, TIP539. TIP540 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • 200 V, 300 V, 400 V Min V BR CEO • 15-A Rated Continuous Collector Current • 125 Watts at 100°C Case Temperature • Min f j of 10 MHz at 10 V, 1 A	OCR Scan	TIP538, TIP539. TIPB40 TIPS38 TIP539 TIP540 TIP540 tca150c bdx 540 2N3440 TIP538 BUY71 TIP-540 bdx 65c	PDF
Untitled Abstract: No abstract text available Text: TYPES 2N4416, 2N4416A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO . D L -S 6 81 0 6 4 9 , J A N U A R Y 1968 FOR VHF AM PLIFIER A ND M IX E R APPLICATIONS High Power G a in . . . 10 dB M in at 400 M Hz Low Noise F igure. . . 4 dB M a x af 400 M Hz	OCR Scan	2N4416, 2N4416A 400-M 7S222	PDF
Diode BAY 46 Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49 Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j	OCR Scan	1N456 BAW21A CB-26) CB-127 Tamb100Â Tamb125Â Tamb60Â CB-127 CB-127. Diode BAY 46 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49	PDF
Untitled Abstract: No abstract text available Text: MegaMOS FET Module VMO 400-02F VDSS D25 RDS on = 200 V = 418 A = 4.2 mQ o1 N-Channel Enhancement Mode 11 I Preliminary data 10 T 2 Maximum Ratings Sym bol Test C onditions VDSS Tj = 25°C to 150°C 200 V vDGR T j = 25°C to 150°C; RGS= 10 k£2 200 V VGS	OCR Scan	400-02F 00D2315 400-02F 000231b	PDF
Untitled Abstract: No abstract text available Text: IRF740 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRF740 O-220	PDF
TIP-54 Abstract: TIP51 TIP54 Text: TYPES TIP51 THRU TIP54 N-P-N SILICON POWER TRANSISTORS • 100 mJ Reverse-Energy Rating • 250 V to 400 V Min V b r CEO • 100 W at 25°C Case Temperature • 5 A Peak Collector Current • 2.5 MHz Min f j at 10 V , 0.2 A TYPES TÏP51, TIP52, TIP53. TIP54	OCR Scan	TIP51 TIP54 TIP52, TIP53. TIP51 TIP-54	PDF
ALPs vcr Abstract: IC LM 393 N DTM12C-N DTM12E-N DTM12G-N H-17 H-18 vdum200 Text: 132 — — — DTM 12-N • * jb b i# # * \ \ 4 4 CT0-220 12A O T O TO-220 ■ « « Itiltttt »Li I drm Vtm li'll %' DTM12C-N DTM12E-N DTM12G-N 400 600 VbSM Vdrm Tt , J tsm I 2-t P gm 100 50Hz, 0.5 r GM 10 2 (/S50Hz, dutyS10% ) di/dt T, T,ig ? >u) 5 (/S50Hz, dutyS10% )	OCR Scan	O-220 T0-220) DTM12C-N DTM12E-N DTM12G-N -10ms) dutyS10% /S50Hz, H-101 ALPs vcr IC LM 393 N DTM12G-N H-17 H-18 vdum200	PDF
Diode BAY 46 Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j	OCR Scan	1N456 BAW21A 1N456 BAX12 CB-102) CB-104) Diode BAY 46 Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode	PDF
Untitled Abstract: No abstract text available Text: • 7^5^537 O O g ^ f l T ■ _ SGS-TTiOMSON 1^ 10 g^@[l[L[i ir^@[i0(g i_ B U Z 6 0 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR S G S-THOMSON 3GE J> TYPE V DSS f*DS(on b BUZ60 400 V 1.0 fl	OCR Scan	BUZ60 7J51237	PDF
Untitled Abstract: No abstract text available Text: IRF720A Advanced Power MOSFET FEATURES BVDSS - 400 V ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRF720A	PDF
Untitled Abstract: No abstract text available Text: IRF730A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRF730A	PDF
SEC IRF730 Abstract: No abstract text available Text: IRF730 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRF730 SEC IRF730	PDF

Untitled Abstract: No abstract text available Text: IRFW730S A d van ced Power MOSFET FEATURES BV DSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1 .Oil A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRFW730S	PDF
Untitled Abstract: No abstract text available Text: IRFS340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRFS340	PDF
Untitled Abstract: No abstract text available Text: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRFP340A	PDF
Untitled Abstract: No abstract text available Text: IRFW/I730A A d van ced Power MOSFET FEATURES BV DSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1 .Oil A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRFW/I730A	PDF
Untitled Abstract: No abstract text available Text: IRFW720S A d van ced Power MOSFET FEATURES BVDSS - 400 V ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance CO CO ^D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRFW720S	PDF
Untitled Abstract: No abstract text available Text: IRFR/U320A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 400 V 1.8Î2 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 3.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRFR/U320A	PDF
Untitled Abstract: No abstract text available Text: IRFR320 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 400 V 1.8Î2 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 3.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRFR320	PDF
IRF750 Abstract: No abstract text available Text: IRF750 A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	IRF750 O-220 IRF750	PDF
FAST SWITCHING scr Abstract: T627 Text: 2 5 0 A Avg. 400 RMS Up to 1200 Volts 10-50/is Fast Switching SCR T 6 2 7 -.2 5 Symbol <i>D </>Di <*>D, H 0J J, L N Inches_ Millimeters Max. Min. Max. 1.610 .745 1.420 1.650 .755 1.460 40.89 18.92 36.07 .500 .135 .072 .560 .145 .082 12.70 3.43 1.83	OCR Scan	10-50/is FAST SWITCHING scr T627	PDF
S4B-01 Abstract: S5KC20 s5kc40 S3B40-08 S3B40-10 S4VB60 S5KC20R S5KC40R S5KD20 S1ZAK20 Text: - 138- X » m £ [ si # & i Ë * [ SI # t t * B S n % Prsm Vrs m k W (V) V H (V) Vr V\| (V) (V) Io Tm & (A) (V ) Ifsm Igntax Vpmax f (V ) (V) I f (A) T(°C) 25L A) Vr (V) o # 11 i T(°C) fr 7 c 200 0. 25 j 1. 2 0. S1ZAK40 * t« tc 400 0. 25 25 j 25L 10	OCR Scan	S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z 300ns S5KD20H 100ns S5KD40 S4B-01 S5KC20 s5kc40 S3B40-08 S3B40-10 S4VB60 S5KC20R S5KC40R S5KD20	PDF

10 N J 400 V Search Results

10 N J 400 V Result Highlights (5)

10 N J 400 V Price and Stock

Vishay Intertechnologies VR25000001005JN400

Carling Technologies VVA9CNJ-100

Carling Technologies V4D1DNN1-J4400-000

Power Integrations 1SP0335V2M1-5SNA0400J650100

Power Integrations 1SP0335V2M1C-5SNA0400J650100

10 N J 400 V Datasheets Context Search

ISS380

RCR70BY-10

TIP540

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Diode BAY 46

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TIP-54

ALPs vcr

Diode BAY 46

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SEC IRF730

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IRF750

FAST SWITCHING scr

S4B-01