IRFW720S Search Results

IRFW720S Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFW720S		Fairchild Semiconductor	Advanced Power MOSFET		Original	PDF
IRFW720S		Fairchild Semiconductor	Advanced Power MOSFET		Scan	PDF
IRFW720S		Fairchild Semiconductor	Advanced Power MOSFET		Scan	PDF

IRFW720S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFW720S Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRFW720S FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V	Original	PDF	IRFW720S IRFW720S
IRFW720S Abstract: No abstract text available Text: IRFW720S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance 00 00 ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î 2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 400V	OCR Scan	PDF	IRFW720S IRFW720S
Untitled Abstract: No abstract text available Text: IRFW720S A d van ced Power MOSFET FEATURES BVDSS - 400 V ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance CO CO ^D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	PDF	IRFW720S
IRFW720S Abstract: No abstract text available Text: IRFW720S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance CO CO ^D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î 2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 400V	OCR Scan	PDF	IRFW720S IRFW720S
Untitled Abstract: No abstract text available Text: IRFW720S Advanced Power MOSFET FEATURES B^DSS - 400 V ♦ Avalanche Rugged Technology CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 400V	OCR Scan	PDF	IRFW720S