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    10 GHZ PNP TRANSISTOR Search Results

    10 GHZ PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    10 GHZ PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE97833 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 NE97833-T1B-A 24-Hour

    221-166

    Abstract: 2SA1978 NE02133 NE97833 NE97833-T1 S21E k 2445 transistor
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 NE97833-T1 24-Hour 221-166 2SA1978 NE02133 NE97833-T1 S21E k 2445 transistor

    221-166

    Abstract: 2SA1978 transistor marking T93 NE02133 NE97833 S21E ne02133 MARKING
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 24-Hour 221-166 2SA1978 transistor marking T93 NE02133 S21E ne02133 MARKING

    2SA1978

    Abstract: NE02133 NE97833 NE97833-T1B-A S21E
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97833 NE02133 NE97833 2SA1978 2SA1978 NE02133 NE97833-T1B-A S21E

    smd transistor marking 12W

    Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
    Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3


    Original     		PDF MCH4009 17dB2GHz SC-72 SC-43 SC-51 O-226 SC-71 O-126 O-92MOD smd transistor marking 12W SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    GHz PNP transistor

    Abstract: BFT93 BFT93W TRANSISTOR D 5702 marking code X1 transistor BF 998 IC/CTC 1351 transistor pin detail
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors March 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor


    Original     		PDF BFT93W OT323 BFT93W BFT93. SCD28 GHz PNP transistor BFT93 TRANSISTOR D 5702 marking code X1 transistor BF 998 IC/CTC 1351 transistor pin detail

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14

    marking code W1

    Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14 marking code W1 BFT92 TRANSISTOR 3358 NH35

    W1p TRANSISTOR

    Abstract: transistor w1P w1p npn SOT23 W1P W1P 65 transistor transistor w1P 97 W1p 25 TRANSISTOR BFT92 W1P 06 "W1P"
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23


    Original     		PDF BFT92 W1p TRANSISTOR transistor w1P w1p npn SOT23 W1P W1P 65 transistor transistor w1P 97 W1p 25 TRANSISTOR BFT92 W1P 06 "W1P"

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 BFT92W transistor Bft92 NT 407 F power transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 transistor Bft92 NT 407 F power transistor

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 BFT92W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES


    Original     		PDF BFT92W OT323 BFT92W BFT92. MBC870 SCD31 123065/1500/01/pp12 NT 407 F TRANSISTOR TO 220 NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23

    BFT93

    Abstract: BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23


    Original     		PDF BFT93 BFT93 BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    TAG 8907

    Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93
    Text: Philips Semiconductors •■ 71 10 05 b d O b ^ h l S IS ■ P H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in


    OCR Scan     		PDF 711005b BFT93 BFR93 BFR93A. TAG 8907 lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: f r = 5.5 G H z TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: N E 02133 • HIGH INSERTION POWER GAIN: |S21e |2 = 10 dB at 1 GHz


    OCR Scan     		PDF NE97833 NE97833 2SA1978 NE97833-T1

    marking LJ

    Abstract: BF579 60n4
    Text: PNP Silicon RF Transistor • • BF 579 Suitable for low distortion, low noise VHF/UHF amplifier and UHF oscillator applications in TV tuners High transition frequency of 1.6 GHz at typical operating current of 10 mA Type Marking Ordering code for versions in bulk


    OCR Scan     		PDF Q62702-F552 Q62702-F971 marking LJ BF579 60n4

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ö53b320 PNP Silicon RF Transistor Q01b744 S «SIP BF 579 SIEMENS/ SPCLi SEMICONDS r - 3 i- 1 7 • Suitable for low distortion, low noise VHF/U HF amplifier and UHF oscillator applications in TV tuners • High transition frequency of 1.6 GHz at typical operating current of 10 mA


    OCR Scan     		PDF 53b320 Q01b744 Q62702-F552 Q62702-F971 20base A23b320 QGlb74b

    marking code W1

    Abstract: TRANSISTOR 3358 BFT92 BFT92W
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures


    OCR Scan     		PDF BFT92W OT323 BFT92W BFT92. MBCB70 OT323. 7110fl2b marking code W1 TRANSISTOR 3358 BFT92

    Philips FA 564

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures


    OCR Scan     		PDF BFT93W OT323 BFT93W BFT93. MBC870 OT323. 711002b. Philips FA 564

    BFP96

    Abstract: BFQ32C
    Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X


    OCR Scan     		PDF BFP96. BFQ32C BFP96 BFQ32C

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors k b S 3 T 3 1 Q 031535 530 • A P X ^Pfoductspecification PNP 4 GHz wideband transistor BFQ32C N AUER PHILIPS/DISCRETE DESCRIPTION blE » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes. It is


    OCR Scan     		PDF BFQ32C OT173 BFP96.

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb 5 3 131 0 0 3 1 7 3 b E 3T • PNP 1 GHz video transistor APX Product specification BFQ253; BFQ253A N AUER PHILIPS/DISCRETE DESCRIPTION b'lE » ■ PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a


    OCR Scan     		PDF BFQ253; BFQ253A BFQ233 BFQ253 0D3173T

    philips bfq

    Abstract: BFQ253A BFQ233 BFQ233A BFQ253
    Text: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a


    OCR Scan     		PDF 03173b BFQ253; BFQ253A BFQ233 BFQ233A fcj53131 BFQ253A philips bfq BFQ253