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    10 35 DIODE Search Results

    10 35 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    10 35 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    418B-04

    Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460
    Text: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35


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    PDF MBR0520LT1, MBR120LSFT1, MBRM110LT1, MBRA210LT3 MBRS130LT3 MBRS410LT3 MBRD835L MBRD1035CTL MBR2030CTL MBRB2535CTL 418B-04 MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460

    2N2222B

    Abstract: 2N2244 2N1104 NB311E Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A


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    PDF 2SCS02 BFY50 BFX50 NB311E NB311F NB311X NB311Y TP5189 2N1104 2N2222B 2N2244 Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362

    Untitled

    Abstract: No abstract text available
    Text: Fairchild Kits available through Digi-Key Digi-Key Part Number: DIODESKITFS-ND 500MW Zener Diodes Description PKG parts per kit 1N5229BTR 4.3V 500MW 5% ZENER, DO35 DO-35 10 1N5230BTR 4.7V 500MW 5% ZENER, DO35 DO-35 10 1N5231BTR 5.1V 500MW 5% ZENER, DO35 DO-35


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    PDF 500MW 1N5229BTR DO-35 1N5230BTR 1N5231BTR

    byp 660

    Abstract: No abstract text available
    Text: Diotec BYP 70/35 . BYP 79/35 Silicon Press-Fit-Diodes High-temperature diodes Silizium-Einpreßdioden Hochtemperaturdioden Nominal current – Nennstrom Ø 12.7 35 A Ø 10 Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.3 50.400 V


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    PDF UL94V-0 byp 660

    qm431

    Abstract: E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455
    Text: BBJ Zulassungen/approvals QK/T. Saringer, Datum: Type Cat. No. Approval No Volts AMPS Wire mm2 EK 10 035466 B/12/1145/96 10 EK 10/35 066136 B/12/1145/96 10 EK 16 037466 B/12/1145/96 16 EK 16/35 019016 B/12/1145/96 16 EK 2.5/35 066106 B/12/1145/96 2,5 EK 2.5N


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    PDF B/12/1145/96 qm431 E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455

    diode 824

    Abstract: No abstract text available
    Text: DSS 10-0035/45A IFAV = 10 A VRRM = 35 - 45 V VF = 0.58 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 35 45 35 45 TO-220 AC Type A C C A DSS 10-0035A DSS 10-0045A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions IFRMS IFAV TC = 160°C; rectangular, d = 0.5


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    PDF 10-0035/45A O-220 0-0035A 0-0045A diode 824

    Untitled

    Abstract: No abstract text available
    Text: Diotec KYP 70/35 . KYP 79/35 Silicon Press-Fit-Diodes Silizium-Einpreßdioden Nominal current – Nennstrom 35 A Ø 10 Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.400 V Metal press-fit case with plastic cover Metall-Einpreßgehäuse mit Plastik-Abdeckung


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    PDF UL94V-0

    varistor 222, 2KV

    Abstract: IP20C
    Text: 48 Series - Relay Interface Modules 8 - 10 - 16 A 48.31 48.52 48.61 - 1 pole, 10 A - 35 mm rail EN 50022 mounting - 2 pole, 8 A - 35 mm rail (EN 50022) mounting - 1 pole, 16 A - 35 mm rail (EN 50022) mounting - Relay interface modules for use with PLC systems, 15.5 mm wide


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    D-SSK 135

    Abstract: No abstract text available
    Text: Schottky Diode Chips Type VRRM IFAVM V A °C K/W IFSM 10 ms 45 °C A 15 20 35 135 130 1.4 1.1 350 660 10 20 200 350 DWS 17 25 25 125 1.4 330 10 80 0.43 DWS 4 DWS 14 DWS 24 DWS 34 35 / 45 10 16 25 60 157 159 148 120 2.5 2 1.5 1 140 280 550 800 0.15 0.25 0.5


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    P4C422

    Abstract: No abstract text available
    Text: P4C422 HIGH SPEED 256 X 4 STATIC CMOS RAM FEATURES High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) CMOS for Low Power – 495 mW Max. – 10/12/15/20/25 (Commercial) – 495 mW Max. – 15/20/25/35 (Military)


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    PDF P4C422 22-Pin 24-Pin P4C422 024-bit SRAM101 Oct-2005

    ir 21015

    Abstract: No abstract text available
    Text: Bulletin PD-21015 rev. B 06/06 10TQ.SPbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 35 - 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 10 A 35 - 45 V IFSM @ tp = 5 s sine 1050 A VF @ 10 Apk, TJ = 125°C


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    PDF PD-21015 10Amp 08-Mar-07 ir 21015

    ir 21015

    Abstract: 10TQ 10TQ045S 40HF P460 SMD-220 PD-21015 21015
    Text: Bulletin PD-21015 rev. B 06/06 10TQ.SPbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 35 - 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 10 A 35 - 45 V IFSM @ tp = 5 s sine 1050 A VF @ 10 Apk, TJ = 125°C


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    PDF PD-21015 10Amp 12-Mar-07 ir 21015 10TQ 10TQ045S 40HF P460 SMD-220 21015

    ir 21015

    Abstract: 21015
    Text: Bulletin PD-21015 05/05 10TQ.SPbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 35/ 45V Major Ratings and Characteristics Description/ Features Characteristics 10TQ Units IF(AV) Rectangular 10 A VRRM 35 / 45 V IFSM @ tp = 5 µs sine 1050 A VF @ 10 Apk, TJ = 125°C


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    PDF PD-21015 10Amp O-220 ir 21015 21015

    ir 21015

    Abstract: No abstract text available
    Text: Bulletin PD-21015 rev. A 07/05 10TQ.SPbF SCHOTTKY RECTIFIER 10 Amp IF AV = 10Amp VR = 35 - 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 10 A 35 - 45 V IFSM @ tp = 5 µs sine 1050 A VF @ 10 Apk, TJ = 125°C


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    PDF PD-21015 10Amp O-220 ir 21015

    d1n914

    Abstract: bb204b BAV10
    Text: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35


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    PDF DO-35 d1n914 bb204b BAV10

    iss86

    Abstract: 1SS119
    Text: DIODE SERIES •î i t | ' > a 7 K Schottky barrier diodes for detectors & mixers Ratings Application Package Code DO-35 Detector switching Type No. isstoe 1SS108 1SS196 10 30 max 4.5 30 15 30 3 4.5 1.0 15 3 35 ‘ 35 ‘ 30 15 15 30 15 [0.6] [0.7] 1.0 [10]


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    PDF DO-35 1SS108 1SS196 1SS199 DO-35 1SS82 1SS83 HSS81 HSS82 HSS83 iss86 1SS119

    D417

    Abstract: rsm ah
    Text: □IXYS DS8 10-0035/45A Power Schottky Rectifier I fav V rrm VF Preliminary Data 10 A 35 - 45 V 0.58 V TO-220 AC v RSM Type V rrm V V 35 45 35 45 n C TAB DSS 10-0035A DSS 10-0045A A = Anode, C = Cathode , TAB = Cathode Symbol Maximum Ratings Test Conditions


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    PDF 10-0035/45A O-220 0-0035A 0-0045A 5/45A D4-17 D417 rsm ah

    Untitled

    Abstract: No abstract text available
    Text: DSS 10-0035/45A Power Schottky Rectifier U av V rrm VF 10 A 35 • 45 V 0.58 V Preliminary Data v RSM V, V V 35 45 35 45 * f TT\ Type 9 Vsz J ^ DSS 10-0035A DSS 10-0045A I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings


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    PDF 10-0035/45A 0-0035A 0-0045A

    SCHOTTKY bys 50

    Abstract: No abstract text available
    Text: h LGSAGrlBB SCHOTTKY DIODES Type 1 1 1 T V v at 1 F RRM FAV FSM F R jmax V (A) (A) (V) (A) (mA) (C) BYR 10-25 BYR 10-35 BYR 10-45 BYS 10-40 BYS 10-50 BYS 10-60 BYS 10-70 BYS 10-80 BYS 10-90 BYS 10-100 BYR 16-25 BYR 16-35 BYR 16-45 BYS 16-40 BYS 16-50 BYS 16-60


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    PDF O-220 DO-218 T00MSE4 0000G14 SCHOTTKY bys 50

    C5VI

    Abstract: D0214 zener c5vi
    Text: Temic Semiconductors Zener Diodes continued Part Number Vzaem- 1Jjgf-: jfef ; ¥25- . mA V • V «ad' ectric#! Characteristics :' r *SÉK y $ ti‘ a m <25 <25 <20 < 15 < 15 < 15 < 10 <5 <4 <3.5 <6 <6 <8 < 10 < 10 < 12 <20 <20 <25 <30 <30 <30 <35 <35


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    PDF BZG05/C3V3 BZG05/C3V6 BZG05/C3V9 BZG05/C4V3 BZG05/C4V7 BZG05/C5VI BZG05/C5V6 BZG05/C6V2 BZG05/C6V8 BZG05/C7V5 C5VI D0214 zener c5vi

    MS7351

    Abstract: MS7451 MS7311 MS7231 MS7531 MS7221 MS7121 MS7241 MS745-1 MS*8211
    Text: 64 SCHOTTKY DIODES 4 3 PART NUMBER C j. pF Ip (ma) V BR ,V ) 5 Rs (ß ) ULTRA f a s t s w it c h in g d io d e s MS7111 MS7121 MS7131 5 5 5 10 20 35 1.0 1.0 1.0 MS7141 MS7151 MS7211 5 5 10 50 100 10 1.0 1.0 1.0 20 MS7221 MS7231 MS7241 10 10 10 20 35 50 1.0


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    PDF MS7111 MS7121 MS7131 MS7141 MS7151 MS7211 MS7221 MS7231 MS7241 MS7251 MS7351 MS7451 MS7311 MS7531 MS745-1 MS*8211

    BA216

    Abstract: BA164 1S44 BA217 1N457JAN 1N458JAN 1N459JAN 1N461A BA130 BA218
    Text: FAIRCHILD DIODES DIODES GENERAL PURPOSE DIODES BY DESCENDING BV (Cont’d) GLASS PACKAGE Item DEVICE NO. BV V Min *R nA Max @ vF Vr V V Max If mA @ c trr PF ns Max Max Package No. 1 BA218 50 50 25 1.0 10 5.0 — ' DO-35 2 1S44 50 50 10 1.15 10 6.0 — DO-35


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    PDF BA218 DO-35 fdh900 fdh999 1N461A BA217 BA216 BA164 1S44 1N457JAN 1N458JAN 1N459JAN BA130

    c125 diode

    Abstract: No abstract text available
    Text: Power Schottky Rectifier •FAV V rrm VF 10 A 35 - 45 V 0.58 V Preliminary Data v RSH TO-220 AC V V V 35 45 35 45 t- C TyP e rrm Ï7 A "" DSS 1 0-0035A DSS 10-0045A I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings ^FRMS


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    PDF 0-0035A 0-0045A c125 diode

    1N4848

    Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
    Text: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70


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    PDF fa501J T-01-01 1N456 DO-35 1N456A 1N457A 1N458 1N4848 1N4868 1N4828 1N484 1N4858 1N458A