1.6 VOLT ZENER DIODE Search Results

1N6316 JANTX

Abstract: 1N6309 1N6310 1N6311 1N6312 1N6313 1N6314 1N6315 1N6316 1N6317
Contextual Info: 1N6309 THRU 1N6320 • AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/533 • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1n6319

Abstract: 1N6319 JANTX 1N6309 1N6310 1N6311 1N6312 1N6313 1N6314 1N6315 1N6316
Contextual Info: • AVAILABLE IN JAN, JANTX, PER MIL-PRF-19500/533 1N6309 THRU 1N6320 JANTXV, AND JANS • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

NTE5141A

Contextual Info: NTE5111A thru NTE5166A Zener Diode, 5 Watt ±5% Tolerance Features: D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC Power Dissipation TL = +75°C, Lead Length = 3/8” , PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W

1N6317US JANTX

Abstract: mil-prf-19500/533 1N6317US 1N6319US JANTXV 1N6309US 1N6310US 1N6311US 1N6312US 1N6313US 1N6314US
Contextual Info: 1N6309US THRU 1N6320US • AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/533 • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

Contextual Info: NTE5111A thru NTE5166A Zener Diode, 5 Watt ±5% Tolerance Features: D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC Power Dissipation TL = +75°C, Lead Length = 3/8” , PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W

NTE5127A

Abstract: NTE5124A NTE5117A NTE5161A NTE5128A NTE5130A NTE5133A NTE5133 NTE5125A NTE5152A
Contextual Info: NTE5111A thru NTE5166A Zener Diode, 5 Watt ±5% Tolerance Features: D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC Power Dissipation TL = +75°C, Lead Length = 3/8” , PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W

1N6317US

Abstract: 1N6309US 1N6310US 1N6311US 1N6312US 1N6313US 1N6314US 1N6315US 1N6316US 1N6320US
Contextual Info: • AVAILABLE IN JAN, JANTX, JANTXV AND PER MIL-PRF-19500/533 1N6309US THRU 1N6320US JANS • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

Contextual Info: 1N3305B THRU 1N3350B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODE 6.8 VOLT THRU 200 VOLT 50W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N3305B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high

1N4475

Abstract: 1N4465 1N4460 1N4469 1N4474 1N4477 1N4471 1N4479 1N4466
Contextual Info: 1N4460 THRU 1N4496 w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODES 1.5 WATT, 6.2 THRU 200 VOLT 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4460 series silicon Zener diode is a high quality voltage regulator designed for use in automotive, industrial, commercial,

Contextual Info: 1N3305B THRU 1N3350B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODES 6.8 VOLT THRU 200 VOLT 50W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N3305B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high

HZ2A1

Abstract: HZ15-1 HZ6C HZ-12B1 HZ4B3 HZ11A3 HZ27-3 hz9a2 HZ20-3 HZ4C
Contextual Info: HZ2A1 . HZ36-3 500 mW HZ2A1 . HZ36-3 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2012-11-19 Maximum power dissipation Maximale Verlustleistung 3.9 62.5 Nominal Z-voltage Nominale Z-Spannung 1.6.38 V Glass case Glasgehäuse

1N2827B

Contextual Info: 1N2804B THRU 1N2846B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODES 50W, 6.8 THRU 200 VOLT 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N2804B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high

1n53338

Abstract: 1N53348
Contextual Info: MOTOROLA SC DIOBES/OPTO 3TE D El b3L7ESS 00fl3flEM T E3MOT7 MOTOROLA T SEM IC O N D U C T O R L" — - iH TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­

1N5347B Case 17-02

Abstract: ZENER DIODE 18 volt 3 watt 5.1 volt 5 watt zener diode ZENER DIODE 18 volt 5 watt zener motorola 1N5333B ZENER DIODE 5 watt 140 VOLT 1N5335B 1N5336B 1N5338B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.

LTVSQ5V5ESGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD LTVSQ5V5ESGP LOW CAPACITANCE SURFACE MOUNT TVS DIODES APPLICATION *PC/Notebook USB2.0/IEEE1394 ports. * Cellular phone and PCS mobile handsets. *DVI interfaces. * Cordless telephones SC-74/SOT-457/SOT-23-6L *Wireless data WAN/LAN ayatems.

1n53338

Abstract: 1N53888 2SC 930 AF 1NS339B 1N6360B Zener diode wz 210 1N5333B 1N5334B 1N5335B 1N5336B
Contextual Info: 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­ teristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an axlal-lead, transfer-molded plastic package offering protection In all common environ­

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.

92 um zener diodes

Abstract: MOTOROLA 1N5339B ZENER DIODE 18 volt 1N5370B motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.

1N53888

Abstract: Zener diode wz 130 1n53338 LR Amps Zener diode wz 210 Zener diode WZ 340 1N5358B motorola Zener diode wz 230 Zener diode wz 280 1N5333B
Contextual Info: MOTOROLA SC D I O D E S / O P T O 3TE D El b3L72S S 00Ö3ÖEM E3MOT7 MOTOROLA SEMICONDUCTOR c TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­

zener diode marking R11

Abstract: CMZ5340B
Contextual Info: CMZ5334B THRU CMZ5388B SURFACE MOUNT SILICON HIGH POWER ZENER DIODES 5.0 WATT, 3.6 THRU 200 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5334B series silicon Zener diode is a high quality voltage regulator, manufactured in an epoxy molded surface

1N5347B Case 17-02

Abstract: Zener Voltage Regulator Diodes motorola ZENER DIODE 5 watt 140 VOLT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.

Contextual Info: CMZ5334B THRU CMZ5388B SURFACE MOUNT SILICON HIGH POWER ZENER DIODES 5.0 WATT, 3.6 THRU 200 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5334B series silicon Zener diode is a high quality voltage regulator, manufactured in an epoxy molded surface

CMZ5334B

Abstract: c5387
Contextual Info: CMZ5334B THRU CMZ5388B SURFACE MOUNT SILICON HIGH POWER ZENER DIODES 5.0 WATT, 3.6 THRU 200 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5334B series silicon Zener diode is a high quality voltage regulator, manufactured in an epoxy molded surface

SMD Diode S140

Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Contextual Info: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in