BAV70
Abstract: No abstract text available
Text: MOTOROLA SC -CDIODES/OPTOJ { Im »F|b3L72S5 6367255 MO TO R O L A SC D I O D E S / O P T O 34C D03ÖS4B h 38243 D T ' 0 2 - of SOT23 (continued) BAV70 DEVICE NO. SMALL-SIGNAL SWITCHING DIODE T0P VIEW r— « I Common cathode dual diode specially designed for high
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b3L72S5
BAV70
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369A-10
Abstract: AN569 MTD1N40 MTD1N40-1 TO-252 N-channel power MOSFET
Text: MOTOROLA SC XSTRS/R F bf l E » • b3L72S4 00=10403 102 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate DPAK for Surface M ount or Insertion M ount TM O S POWER FET
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MTD1N40
369A-10
AN569
MTD1N40
MTD1N40-1
TO-252 N-channel power MOSFET
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hc595a
Abstract: 74HC595A SS125 LS595 MC54/74HC595A HC595 MC54HCXXXAJ MC74HCXXXAD MC74HCXXXAN ON Semiconductor HC595A
Text: MOTOROLA SC HE LOGIC 0 | b3L72S2 0000^41 D | Order this data sheet by MC54HC595A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 54/74H C 595A Advance Information 8-Bit Serial-lnput/Serial- or Parallel-Output Shift Register with Latched 3-State Outputs J SUFFIX
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b3l72s2
MC54HC595A/D
MC54/74HC595A
LS595.
HC595A
MK145BP,
74HC595A
SS125
LS595
HC595
MC54HCXXXAJ
MC74HCXXXAD
MC74HCXXXAN
ON Semiconductor HC595A
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2N5190 MOTOROLA
Abstract: N5191 2N5190 C 3311 transistor LT 7706 d 317 P 2n transistor Motorola transistors 2N5192
Text: MOTORCLA SC XSTRS/R F T'3Ò 12E D | b3L72SM Q0ÛMS30 5 I 2N5190 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5192 SILICON NPN POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS SILICON NPN . . . for use in power amplifier and switching circuits, — excellent safe
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b3L72SM
2N5190
2N5192
2N5193,
2N5194,
2N5195
ZN5190
2NS191
2N5192
2N5190
2N5190 MOTOROLA
N5191
C 3311 transistor
LT 7706
d 317 P 2n transistor
Motorola transistors 2N5192
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1N53888
Abstract: Zener diode wz 130 1n53338 LR Amps Zener diode wz 210 Zener diode WZ 340 1N5358B motorola Zener diode wz 230 Zener diode wz 280 1N5333B
Text: MOTOROLA SC D I O D E S / O P T O 3TE D El b3L72S S 00Ö3ÖEM E3MOT7 MOTOROLA SEMICONDUCTOR c TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac
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b3L72SS
E3I10T7
1N53888
Zener diode wz 130
1n53338
LR Amps
Zener diode wz 210
Zener diode WZ 340
1N5358B motorola
Zener diode wz 230
Zener diode wz 280
1N5333B
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IN3024
Abstract: TIL 121 opto IN3016B IN3051A in3827 1N3821 IN3042 1N3016A 1N3051A IN3330
Text: MOTOROLA s c -c d i o d e s / o p t o j 12E D I b3L72SS DQTTñET 1N3821 thru 1N3830 MOTOROLA SEMICONDUCTOR SERIES TECHNICAL DATA 1N3016A thru 1N3051A D e s i g n e r s D a ta , S h e e t , SERIES 1.0 WATT METAL SILICON ZENER DIODES . . . a com plete series o f 1.0 W att Zener Diodes w ith lim its and
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MIL-S-19500
ti3ti72SS
1N3821
1N3830
1N3016A
1N3051A
IN3024
TIL 121 opto
IN3016B
IN3051A
in3827
IN3042
IN3330
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Untitled
Abstract: No abstract text available
Text: bS E D • b3L72Sl MOTOROLA 00ññt,37 M44 MOTOROLA SC N0T3 { M E M O R Y / ASI SEMICONDUCTOR TECHNICAL DATA MCM62T316 Product Preview 8K x 16 Bit Synchronous Cache Tag With Comparator The M C M 62T316 is a 131,072 bit synchronous static random a ccess m em ory
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b3L72Sl
MCM62T316
62T316
15-bit
MCM62T316
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Motorola MPSU02
Abstract: SILICON SMALL-SIGNAL DICE
Text: 'MOTOROLA SC O I O D E S / O P T O } 6367255 34 MOTOROLA SC DE | b3L72SS 003A05L DIODES/OPTO 34C • 38026 D 7"-3 3 - 0 5 - SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) ' MPSUC01 DIE NO. — NPN LINE SOURCE — DEL501 This die provides performance similar to that of the following device types:
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b3L72SS
003A05L
DEL501
MPSU01
MPSU02
MPSUC01
Motorola MPSU02
SILICON SMALL-SIGNAL DICE
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HC157A
Abstract: No abstract text available
Text: MOTOROLA SC LOGIC H E D I I b3L72S5 0000=135 5 _ Order this data sheet by MC54HC157A/D MOTOROLA SEMICONDUCTOR 7 ' - ¿ y - j/ s / TECHNICAL DATA M C 5 4 / 7 4 H C 1 5 7 A Advance Information Quad 2-Input Data Selectors/ M ultiplexers J SUFFIX CERAMIC CASE 620-09
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b3L72S5
MC54HC157A/D
MC54/74HC157A
LS157.
HC157A
751B-03
MK145BP,
MC54/74HC157A
C61973
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XMMAS40G10D
Abstract: XMMAS40G10S
Text: ^ OTOROLA Qrd thj document SEMICONDUCTOR TECHNICAL DATA Preliminary Information by XMMAS40G/D XM M AS40G10D XM MA S40G 10S M icrom achined A ccelerom eter ± 4 0 g A m p lifie d MICROMACHINED ACCELEROMETER ±40g AMPLIFIED The MMAS40G family of silicon capacitive, m icro-m achined accelerometers
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XMMAS40G/D
MMAS40G
2PHX34273Sâ
XMMAS40G/D
XMMAS40G10D
XMMAS40G10S
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Reeves hoffman vcxo
Abstract: mecl data MC12061
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC12061 Crystal Oscillator The MC12061 is for use with an external crystal to form a crystal controlled oscillator. In addition to the fundamental series mode crystal, two bypass capacitors are required plus usual power supply pin bypass
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MC12061
MC12061
16-LEAD
Reeves hoffman vcxo
mecl data
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MRF5711LT1
Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as
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O-226AA
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
MPS571
MRF571
MRF5711LT1
MBR571
E4E SOT23
vqb 71
LG 631 IC
Motorola TE 2198
MBR571LT1
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LM311MA
Abstract: 311J-8 111J-8 lm311 motorola
Text: nOTOROLA SC -CTELECOMJ Gl b3b7E53 OGflDSEq T 6 3 6 7 2 53 MOTOROLA SC TE L E C O M 0 1E 8 Ö5 2 4 D LM 111 MOTOROLA LM 211 LM 311 HIGHLY FLEXIBLE VOLTAGE COMPARATORS The ability to operate from a single power supply of 5.0 to 3 0 volts or ± 1 5 volt split supplies, as commonly used with operational ampli
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b3b7E53
LM311MA
311J-8
111J-8
lm311 motorola
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by MRF10500H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10500H’ Microwave Pulse Power Transistor 500 Watts Peak NPN 1025-1150 MHz C FTÌ0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz
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MRF10500H/D
MRF10500H'
MRF10500HX
MRF10500HXV
MRF10500HS
MRF10500HC
355D-02
1PHX31254-1
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Untitled
Abstract: No abstract text available
Text: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz
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F10150H/D
MRF10150H'
MRF10150HX
MRF10150HXV
MRF10150HS
MRF10150HC
376B-02
1PHX31252-1
MRF10150H/D
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MPC971
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M PC970 MPC971 Low V oltage PLL C lock D river The MPC970 and MPC971 are 3.3V compatible, PLL based clock driver devices targeted for high performance RISC or CISC processor based systems. The MPC970 and MPC971 are identical except for the
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MPC970
MPC971
MPC971.
MPC970,
250MHz
b3b7252
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Untitled
Abstract: No abstract text available
Text: Order this document by LM350/D M M O TO R O LA —— — — LM350 Three-Term inal Adjustable Output Positive Voltage Regulator T he LM 350 is an adjustable three-term inal positive voltage regulator capable of supplying in excess of 3.0 A over an output voltage range of 1.2 V
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LM350/D
LM350
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Untitled
Abstract: No abstract text available
Text: <g> M O T O R O L A Pulse Width Modulation Control C ircuit The SG3526 is a high performance pulse width modulator integrated circuit intended for fixed frequency switching regulators and other power control applications. Functions included in this 1C are a temperature compensated voltage
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SG3526
b3b7253
SG3526
010131b
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54190B MCM5L4190B MCM5V4190B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54190B is a 0.6n C M O S high-speed dynam ic random a ccess m em ory. It is organized as 262,144 e ighteen-bit w ords and fabricated with C M O S siiicon-gate pro
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MCM54190B
MCM5L4190B
MCM5V4190B
54190B
MCM54190BJ70
MCM54190BJ80
MCM54190BJ10
MCM5L4190BJ70
MCM5L4190BJ80
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4170B
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54170B is a 0 .6 |i C M OS high-speed dynam ic random a ccess m em ory. It is organized a s 2 62,144 sixteen-bit w ords and fabricated with C M OS silicon-gate process
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MCM54170B
MCM5L4170B
MCM5V4170B
54170B
MCM54170BJ70
MCM54170BJ80
MCM54170BJ10
MCM5L4170BJ70
MCM5L4170BJ80
4170B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Octal D -iy p e Latch w ith 3-S tate Output MC74VHC573 The MC74VHC573 is an advanced high speed CMOS octal latch with 3-state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while
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MC74VHC573
MC74VHC573
DL203
b3b7252
01D055M
MC74VHC573/D
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ICS RS 3197
Abstract: No abstract text available
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable T h e M C M 5 4 2 8 0 B is a 0 .6 j C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m e m o ry .
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MCM54280B
MCM5L4280B
MCM5V4280B
54280BJ70
54280BJ80
54280BJ10
54280BT70
54280BT80
54280BT10
54280BJ70R
ICS RS 3197
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LTZM
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon M PS3904 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage Rating v EBO 6.0
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PS3904
O-226AA)
b3b72SS
LTZM
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54c150
Abstract: No abstract text available
Text: M O T O R O L A SC - C L O G I O 05 D E ] b3fci7g5S 0 0 A D 4 2 E T 6 3 6 7 2 5 2 MOTOROLA SC L O G IC 02E 8 0 4 2 2 D-T-£Ta-o7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC367 H ex 3 -S ta te Noninverting B uffer w ith Separate 2-B it and 4-B it Sections
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MC54/74HC367
MC54/74HC367
LS367.
HC367
54c150
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