1.5E1 Search Results

Contextual Info: 1.5E100-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 1.5 Load Current Max. (A)1 P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

Contextual Info: 1.5E100 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 1.5 Load Current Max. (A)1 P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1

NEC 1357

Contextual Info: NONLINEAR MODEL Q1 CCBPKG SCHEMATIC NE68833 CCB LCX LBX Collector LB Base CCE CBEPKG CCEPKG LE LEX Emitter BJT NONLINEAR MODEL Parameters Q1 PARAMETERS 1 Parameters Q1 UNITS Parameter Units time seconds farads IS 3.8e-16 MJC 0.48 capacitance BF 135.7 XCJC

Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge

TPD2E007

Abstract: TPD2E007YFMRG4
Contextual Info: TPD2E007 www.ti.com SLVS796E – SEPTEMBER 2008 – REVISED AUGUST 2010 2-CHANNEL ESD-PROTECTION ARRAY FOR AC-COUPLED/NEGATIVE-RAIL DATA INTERFACES Check for Samples: TPD2E007 FEATURES 1 • 2 • • • • • YFMG4 PACKAGE BOTTOM VIEW ESD Protection Exceeds IEC61000-4-2

UPA833TF

Abstract: q2.048
Contextual Info: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12

32E-12

Abstract: 32e12 35E16
Contextual Info: NONLINEAR MODEL SCHEMATIC NE688M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 capacitance farads BF 135.7 XCJC 0.56 inductance henries

TSH70

Abstract: TSH71 TSH72 TSH73 TSH74 TSH75
Contextual Info: TSH70,71,72,73,74,75 WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER WITH STANDBY FUNCTION • 3V, 5V, ±5V SPECIFICATIONS PIN CONNECTIONS top view ■ 3dB-BANDWIDTH : 90MHz ■ GAIN-BANDWIDTH PRODUCT : 70MHz ■ SLEW-RATE : 100V/µs ■ OUTPUT CURRENT : up to 55mA

AN9321

Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

OPA445E

Abstract: 5252E 05E3
Contextual Info: * OPA445E OPERATIONAL AMPLIFIER "MACROMODEL" SUBCIRCUIT * CREATED USING PARTS RELEASE 4.03 ON 10/04/90 AT 14:31 * * REV.B 3/21/92 BCB: adding input bias current correction * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;

ITF86182SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

AN9321

Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
Contextual Info: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3

AN9321

Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Contextual Info: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER

rs808

Abstract: HUF76112SK8T AN7254 AN7260 AN9321 AN9322 HUF76112SK8 MS-012AA TB334
Contextual Info: HUF76112SK8 Data Sheet December 2001 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low

AN7254

Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN9321

Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Contextual Info: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features

FDP047AN

Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
Contextual Info: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

fds8878

Contextual Info: FDS8878 N-Channel PowerTrench MOSFET tm 30V, 10.2A, 14mΩ Features General Description „ rDS on = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

76145P

Contextual Info: HUF76145P3, HUF76145S3S Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 45P UF76 5S3 bt A, V, 045 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This

f14n05

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet Title FD1 05, D14 5S P14 5 bt A, V, 00 m, anwer OSTs) utho eyrds ter- July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF75831SK8 Data Sheet August 2000 File Number 4796.2 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER