TC40U250
Abstract: GENTRON ES BT082 GENTRON BT081 2SC1442 entron
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SDT79823 SDT79823 SCA14026 SCA14027 2N6060 2N6062 2N6274 2N6278 ~~~~5~ 25 30 SCA14024 SCA14025 2N6032 2N6275 2N6279 BUT90 BUT90 BUT90 ~~~~g 35 40 BUV60 BUW50 (A) BUV20 BUX20 2N6276 2N6280 SML55405 PT7508
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SML96303
TC40U250
BUR20
2N5685
PT5501
SCA14028
SCA14029
2N5686
GENTRON ES
BT082
GENTRON
BT081
2SC1442
entron
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BOW93C
Abstract: box33c BOV65B B0701 b0651 BOT63B BOX83C BOX63B BOW83C bow530
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) Po Max (W) hFE Min fT Max (HZl leBO Max (A) t, tf Max (8) Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 2501196 B0267B B0267B 2501230 BD649
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B0267B
BD649
5G5132
B0701
TIP132
MJE6045
O-218
O-247var
BOW93C
box33c
BOV65B
b0651
BOT63B
BOX83C
BOX63B
BOW83C
bow530
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BOX34B
Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A
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2N6041
2SBS72A
2SB939A
2SB951A
BOX54B
B0266A
B064S
B0700
B0700A
BOX34B
bot64a
sgs-ates transistors
bot64
MJ0117
BOW94B
BOV64
MJ-01
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collect
Abstract: MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232
Text: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 P b Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value 50 VCBO
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MUN5211
OT-323
SC-70)
30-Dec-05
OT-323
collect
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
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Untitled
Abstract: No abstract text available
Text: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 * “G” Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value
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MUN5211
OT-323
SC-70)
OT-323
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MUN5111
Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
Text: MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 6 5 R1 Q2 R2 1 4 6 5 R2 1 Q1 R1 2 2 4 3 SOT-363 SC-88 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol
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MUN5111DW
OT-363
SC-88)
20-Jan-09
MUN5111
OT-363
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
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6a mun2111
Abstract: MUN2112 MUN2111 transistor mun2111 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
Text: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 2 R2 1 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating
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MUN2111
SC-59
SC-59
6a mun2111
MUN2112
transistor mun2111
MUN2114
MUN2115
MUN2116
MUN2130
MUN2131
MUN2132
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MUN2111
Abstract: MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
Text: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 1 R2 2 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating
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MUN2111
SC-59
SC-59
MUN2112
MUN2113
MUN2114
MUN2115
MUN2116
MUN2130
MUN2131
MUN2132
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50K MARKING SOT23
Abstract: No abstract text available
Text: MMBTA70LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Emitter Voltage
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MMBTA70LT1
OT-23
50K MARKING SOT23
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0 Vdc –100 mAdc Collector Current — Continuous
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MMBTA70LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: BCW29/30LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Base Voltage
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BCW29/30LT1
OT-23
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M31 transistor
Abstract: M313 TRANSISTOR M31 marking transistor M31 marking M31 x 1.0 6H MMBTA70LT1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0
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MMBTA70LT1
236AB)
M31 transistor
M313 TRANSISTOR
M31 marking transistor
M31 marking
M31 x 1.0 6H
MMBTA70LT1
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TW88
Abstract: MUN5111 MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131
Text: MUN5111DW Series 6 Dual Bias Resistor Transistor PNP Silicon 5 4 R1 Q2 6 5 1 Q1 R2 2 2 3 SOT-363 SC-88 R1 1 4 R2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol
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MUN5111DW
OT-363
SC-88)
20-Jan-09
MUN5111
OT-363
TW88
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
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BCW60ALT1
Abstract: No abstract text available
Text: BCW60LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Collector Current: Ic= 100mA * High Total Power Dissipation:Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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BCW60LT1
100mA
225mW
OT-23
BCW60ALT1
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transistor M7A
Abstract: M7A transistor
Text: General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage V –5.0 Vdc –100
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BCW29LT1
BCW30LT1
236AB)
BCW29LT1
transistor M7A
M7A transistor
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0 Vdc –100 mAdc Collector Current — Continuous
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MMBTA70LT1
236AB)
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QL8X12B-XPL68C
Abstract: 80c96 1X3HDR PT3868 C458 R486 r946 MODJACK MT4C16270DJ-6 CR69
Text: A SWITCHED ETHERNET REFERENCE DESIGN SCHEMATICS Switched Ethernet Reference Design Description Order Number: 272907-001 July, 1996 Appendix A: Switched Ethernet Reference Design Schematics Index to Reference Design Schematics Circuit Sheets +3.3V Supply for Processor .3
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AM85C30)
QL8X12B-XPL68C
80c96
1X3HDR
PT3868
C458
R486
r946
MODJACK
MT4C16270DJ-6
CR69
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BCW29
Abstract: BCW29LT1 BCW30 BCW30LT1 M74 marking MARKING M73
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage
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BCW29LT1
BCW30LT1
236AB)
BCW29LT1
BCW29
BCW30
BCW30LT1
M74 marking
MARKING M73
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MPS3904
Abstract: 1N916 MMBTA20LT1 MPS390
Text: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon MMBTA20LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Emitter–Base Voltage
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MMBTA20LT1
236AB)
MPS3904
1N916
MMBTA20LT1
MPS390
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Untitled
Abstract: No abstract text available
Text: General Purpose Amplifier NPN Silicon MMBTA20LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Emitter–Base Voltage V EBO 4.0 Vdc IC 100 mAdc
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MMBTA20LT1
236AB)
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mdp1403
Abstract: 330 ohm resistor pack MDP1801 MDP1405 MDP1603 MDP18 MDP1401 MDP1601 MDP1605 MDP18-01
Text: MODELS MDP14, MDP16, MDP18 Thick Film Resistor Networks Dual-ln-Line, Molded 01, 03, 05 Schematics FEATURES • .160“ [4.06] maximum seated height •Reduces total assembly costs • Rugged, molded case construction ■Compatible with automatic inserting equipment
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MDP14,
MDP16,
MDP18
100PPM/
MDPXX-01
Pull-up/Pull70
MDP14-03-101G
MDP14-05-221/271G
14-pin
mdp1403
330 ohm resistor pack
MDP1801
MDP1405
MDP1603
MDP18
MDP1401
MDP1601
MDP1605
MDP18-01
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Untitled
Abstract: No abstract text available
Text: A C O M P A N Y OF M O DELS M D P 1 4 M D P 16, M D P 18 T h ic k Film R e s is to r N e tw o rk s Dual-ln-Line, Molded 01, 03, 05 Schem atics FEATURES • .160" [4.06] maximum seated height Reduces total assembly costs • Rugged, molded case construction
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100PPM/Â
MDPXX-01
MDP14-03-101G
MDP14-05-221/271G
14-pin
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ATIC 91
Abstract: ATIC 62 MDP1405
Text: MODELS MDP14 and MDP16 Thick Film Resistor Networks Dual-In-Line, Molded DIP 01, 03, 05 Schematics FEATURES .160" [4.06mm] maximum seated height Reduces total assembly costs Rugged, molded case construction Compatible with automatic inserting equipment Highly stable thick film
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MDP14
MDP16
100PPM/
MDPXX-01
P14-05-221/271G
ATIC 91
ATIC 62
MDP1405
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2N6258
Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
Text: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN
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2N4900
2N4901
2N4902
2N4903
2N4904
2N4905
2N4906
2N4907
2N4908
2N4909
2N6258
2N5133
2N5055
2N5129
2N5143
2N5872
2N6030
2N6132
2N6278
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