MPS390 Search Results

MPS3904

Contextual Info: ON Semiconductort General Purpose Transistor MPS3904 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 100

MPS3906

Contextual Info: •I bbSBTBl DIO BiAPX N AUER P H I L I P S / D I S C R E T E MPS3906 b^E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistors in plastic TO -92 envelopes, p rim a rily intended fo r in d u stria l a p p lica tio ns e.g. Telecom . Q U IC K R E F E R E N C E D A T A

MPS3904

Abstract: 1N916
Contextual Info: MOTOROLA Order this document by MPS3904/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MPS3904 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage

MPS3906

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MPS3906 PNP Silicon COLLECTOR 3 1 EMITTER M AXIM UM RATINGS Rating Symbol Value C ollector-E m itter Voltage VCEO ^0 Vdc C ollector-B ase Voltage VCBO -4 0 Vdc E m itter-B ase Voltage U nit Ve b o

MPS3904

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MPS3904 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C oilector-E m itter Voltage Rating VCEO 40 Vdc C ollector-B ase Voltage VCBO 60 Vdc E m itter-B ase Voltage vebo 6.0

MPS3906

Contextual Info: ON Semiconductort MPS3906 General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current — Continuous

MPS3904

Contextual Info: MPS3904 General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200

Contextual Info: Philips Semiconductors Product specification NPN switching transistor MPS3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • General purpose switching and amplification.

MPS3906

Abstract: Transistor mps3906
Contextual Info: MOTOROLA Order this document by MPS3906/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MPS3906 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPS3906 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 23 Philips Semiconductors Product specification PNP switching transistor

mps3906

Contextual Info: Philips Semiconductors Product specification PNP switching transistor MPS3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • General purpose switching and amplification.

transistor mps3904

Abstract: BP317 MPS3904 MPS3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPS3904 NPN switching transistor Product specification Supersedes data of 1997 Mar 03 1999 Apr 12 Philips Semiconductors Product specification NPN switching transistor MPS3904 FEATURES PINNING • Low current max. 100 mA

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type ^cso (V) Min No. MPS3904 60 VCEO ^EBO Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (V) Min (V) P» (W) Min @Tc=25°c 40 6 0:625 (A) !cbo (ma) Max Vcb (V ) 0.2 'ces (pA) Max

2SA1005K

Abstract: BC512 2N3644 2N5383 BC251 LOW-POWER SILICON PNP KT310 BC204B 2N601 2SA1005L
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 MPS3906 MPS3906 MPS3906 NS3906 NTM3906 NTM3906 PET3906 PXT3906 PXT3906 TP5383 YTS3906 2N3906 2N5383 2N5366 2N5366 2N5366 0402 0402 BFY64 2N5367 ~~':5U3~ 25 30 35 40 MPS6533M MMCM2907 MPS6534

Contextual Info: MPS3906 General Purpose Transistor High−Performance Silicon−Gate CMOS MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current — Continuous

MPS3904

Abstract: MPS3904 transistor transistor mps3904 MPS3906 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPS3904 NPN switching transistor Product specification Supersedes data of 1999 Apr 12 2004 Oct 11 Philips Semiconductors Product specification NPN switching transistor MPS3904 FEATURES PINNING • Low current max. 100 mA

BP317

Abstract: MPS3904 MPS3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPS3906 PNP switching transistor Product specification Supersedes data of 1997 May 23 1999 Apr 12 Philips Semiconductors Product specification PNP switching transistor MPS3906 FEATURES PINNING • Low current max. 100 mA

MPS3904

Abstract: transistor mps3904 MPS3904 transistor 1N916
Contextual Info: ON Semiconductort General Purpose Transistor MPS3904 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 100

Contextual Info: MPS3906 M AXIMUM RATINGS Rating Symbol Value Unit C o llector-E m itter Voltage v CEO -4 0 Vdc Collector-Base Voltage v CBO -4 0 Vdc Em itter-Base Voltage v EBO - 5.0 Vdc -2 0 0 Vdc 625 5.0 mW m W /'C C o lle ctor C urrent — C ontinuous Total Device D issipation i« T /\ = 253C

MPS6507

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. 'c ^CBO ^CEO V EBO (V) Min (V) Min (VI Min MPS3711 30 30 6 0.625 0.05 MPS3903 60 40 6 0.625 0.2 PD (W) (A) @Tc=25Gc *C80 ^CB 'c es

transistor K 2333

Abstract: transistor NPN 3474 transistor k 794
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET MPS3904 NPN switching transistor 1999 Apr 12 Product specification Supersedes data of 1997 Mar 03 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor MPS3904 FEATURES

Contextual Info: MPS3905 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: •I bbSBTBl DIO ■ APX N AMER PHILIPS/DISCRETE MPS3906 b'lE D SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistors in plastic TO-92 envelopes, primarily intended for industrial applications e.g. Telecom . QUICK REFERENCE DATA ~ v CBO max. 40 V Collector-emitter voltage (open base)

Contextual Info: duatoi tPioaucti, One. %E1t.su fELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA General Purpose Transistor NPN Silicon MPS3904 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector- Emitter Voltage Rating