1/IC 9752 Search Results

AN 17820 IC

Abstract: REGULATOR IC 7809 function 7809 regulator i c REGULATOR IC 7815 IC 4071 pin and internal diagram ic 7809 function ic 7809 function 7809 regulator 7836 voltage regulator ST 7809 voltage regulator
Contextual Info: KB8527B 1 CHIP CLP SUBSYSTEM IC INTRODUCTION 48 -QFP- 1010E KB8527B is a monolithic circuit which can be used in high performance 60MHz MCA type CLP System. The KB8527B is a subsystem IC for FM / FSK receiving systems and a complete one chip FM / FSK receiver IC for 60MHz

uPD750068GT

Abstract: IC A 2169
Contextual Info: IC dependence of oscillating characterfsties UPD750068GT FCR3.58MC5 - STD Room Temp. Vdd CV3 5 ic no. c u — 21 Item a-e UPD750068GT - CU-21 FCR3.58MC5 (Fig.a^e) Vdd- 5 m — — - Typical 7 a. V1H/VÌL m 5 3 1 -I — i— i i i _1 _I_i_ _1 1 i i i —i— i— 1_—i_I_1—

8 PIN SMD IC L02

Abstract: GLOBESPAN SEMICONDUCTOR L02 SMD FUSE SMD tm
Contextual Info: bel defining a degree of excellence CO DCN HV001T S M D P a c k a g e M e c h a n ic a l In fo rm a tio n — I [— 0.080 _L JT 1 0803 - 1439-00 9752 CO RADSL-LP DCN TM MicroModule -1 .1 3 0 - PCB FOOTPRINT TOP VIEW T LI 0.350 D im ensions are in inches

3-pin IC 7806

Abstract: IC CD 4440 pin diagram motorola sc 7812 RA 8040 ta 9690 SE648 MCI4516 ci 9880 ite 8892
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 60 MHz and 85 MHz Universal Programmable Dual PLL Frequency Synthesizers MC145162 M C145162-1 P S U FF IX P L A S T IC DIP C A S E 648 CMOS T h e M C 1 4 5 1 6 2 is a d u a l p h a s e - lo c k e d lo o p P L L fre q u e n c y s y n th e s iz e r

mil-std-202 method 106

Abstract: 10-36-UNS-2A 10-36UNS-2A L-P-403
Contextual Info: S P E C I F IC A T I O N 2. CONTROL DRAWING ELECTRICAL DC TO 4 6 . 0 GHz. 1 .0 5 + . 0 0 8 x FGHz .0 3 5 d B x v/FGHz. 50 250 1 0 0 dB - FGHz. - 6 5 ° c TO + 1 6 5 ° 750 FREQUENCY RANGE GHz VSWR MAX. * INSERTION LOSS (d B M A X.)-NOMINAL IMPEDANCE (OHM S)-VOLTAGE RATING (MAX VRMS)-RF LEAKAGE (MIN. dB RATING (DEGREES CENTIGRADE)-DIELECTRIC WITHSTANDING VOLTAGE (MAX VRMS)

HV100

Abstract: 2X36
Contextual Info: I2HUR-06 T Z E IC H N U N G G ES C H Ü T Z T DURCH C O P Y R IG H T 1980 AM P D E U T S C H L A N D ALLE RECHTE GMBH V O R BEH ALTEN REV. ÄNDERUNG D ATU M N AM E 2 ZEICHNUNG IN EUROPEAN P R O JE C T IO N GEÄNDERT 0 4 .1 2 .9 0 A . HO 3 LÖTLÄNGE VON 3 IN 3 .1

LS 7613

Contextual Info: KS8805B UNIVERSAL PROGRAMMABLE PLL INTRODUCTION T h e K S 8 8 0 5 B is a s u p e rio r lo w p o w e r-p ro g ra m m a b le d u a l fre q u e n c y s y n th e s iz e r P L L w h ic h c a n b e u s e d in h ig h p e rfo rm a n c e C T -1 c o rd ­ le ss p h o n e s y s te m w ith fre q u e n c y ra n g e u n d e r 6 0 M H z in all o v e r th e

IRF9393TRPBF

Contextual Info: PD - 97522A IRF9393PbF HEXFET Power MOSFET VDS -30 ±25 V V 19.4 mΩ -9.2 A VGS max RDS on max (@VGS = -10V) ID (@TA = 25°C) S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Applications • Adaptor Input Switch for Notebook PC Features and Benefits Features Resulting Benefits

IRF9393

Abstract: P-channel power mosfet SO-8 30V 9.2A 20 IRF9393TRPBF IRF9393PBF f-7101 MS-012AA
Contextual Info: PD - 97522A IRF9393PbF HEXFET Power MOSFET VDS -30 ±25 V V 19.4 mΩ -9.2 A VGS max RDS on max (@VGS = -10V) ID (@TA = 25°C) S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Applications • Adaptor Input Switch for Notebook PC Features and Benefits Features Resulting Benefits

"ESD Diode"

Abstract: ESD diode cmos 4015
Contextual Info: June 29, 2010 Datasheet No – PD 97520 IRS2302S HIGH AND LOW SIDE DRIVER Product Summary Features • • • • • • • • • • Floating channel designed for bootstrap operation VOFFSET Fully operational to +600V Tolerant to negative transient voltage – dV/dt immune

Contextual Info: June 29, 2010 Datasheet No – PD 97520 IRS2302S HIGH AND LOW SIDE DRIVER Product Summary Features • • • • • • • • • • Floating channel designed for bootstrap operation VOFFSET Fully operational to +600V Tolerant to negative transient voltage – dV/dt immune

os 135 diode

Abstract: SPM6550T-0R82M SPM6550T
Contextual Info: PD-97528 IR3856MPbF SupIRBuck HIGHLY EFFICIENT TM INTEGRATED 6A, SYNCHRONOUS BUCK REGULATOR Features • • • • • • • • • • • • • • • • • • • • • • Applications • • • Description Greater than 95% Maximum Efficiency

SPM6550T

Abstract: SPM6550T-0R82M SPM6550T-1R0M IR3856MTRPBF SPM6550T1R0M SPM6550T-1R0M100A
Contextual Info: PD-97528 IR3856MPbF SupIRBuck HIGHLY EFFICIENT TM INTEGRATED 6A, SYNCHRONOUS BUCK REGULATOR Features • • • • • • • • • • • • • • • • • • • • • • Applications • • • Description Greater than 95% Maximum Efficiency

SPM6550T

Abstract: IR3856 0r68 1206 elecrolytic capacitor datasheet 1VB1E104K tdk 4.7 uH SMD INDUCTORS C3216X5R1E106M EEV-FK1E331P 706 SMD SPM6550T-1R0
Contextual Info: PD-97528 IR3856MPbF SupIRBuck HIGHLY EFFICIENT TM INTEGRATED 6A, SYNCHRONOUS BUCK REGULATOR Features • • • • • • • • • • • • • • • • • • • • • • Applications • • • Description Greater than 95% Maximum Efficiency

SPM6550T

Abstract: SPM6550T-1R0
Contextual Info: PD-97528 IR3856MPbF SupIRBuck HIGHLY EFFICIENT TM INTEGRATED 6A, SYNCHRONOUS BUCK REGULATOR Features • • • • • • • • • • • • • • • • • • • • • • Applications • • • Description Greater than 95% Maximum Efficiency

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

Contextual Info: IGBT High Speed IXSH 50N60B VCES IC25 VCE sat Maximum Ratings TO-247 AD Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads

Contextual Info: IGBT High Speed IXSH 50N60B VCES IC25 VCE sat Maximum Ratings TO-247 AD Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads

Contextual Info: IGBT High Speed IXSH 50N60B Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20

PLUS247

Contextual Info: IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES

Contextual Info: IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES

Contextual Info: IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous

Contextual Info: HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient