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    1/4116 16K RAM Search Results

    1/4116 16K RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7016L12PF8 Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation
    7016L20JI Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation
    7016L25PF8 Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation
    7016S12PF8 Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation
    7016S35PF Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation

    1/4116 16K RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FZH115B

    Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
    Text: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P


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    PDF 74INTEGRATED Line-to-10 150ns 16-DIL 150ns 18-pin 250ns 300ns FZH115B fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104

    RBS 3116

    Abstract: 3PRCR
    Text: MITSUBISHI SINGLE-CHIP MICROCOMPUTERS M16C/60, M16C/20, M16C/80 Series Application Note < Flash Memory Control> Preliminary Mitsubishi Electric Corporation Kitaitami Works Mitsubishi Electric Semiconductor Systems Corporation Mitsubishi Electric System LSI Design Corporation


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    PDF M16C/60, M16C/20, M16C/80 lmc30 RBS 3116 3PRCR

    RBS 3116

    Abstract: 0AB0000 IC PROGRAMER M30201F6 SRD4
    Text: MITSUBISHI SINGLE-CHIP MICROCOMPUTERS M16C/60, M16C/20, M16C/80 Series Application Note < Flash Memory Control> Preliminary Mitsubishi Electric Corporation Kitaitami Works Mitsubishi Electric Semiconductor Systems Corporation Mitsubishi Electric System LSI Design Corporation


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    PDF M16C/60, M16C/20, M16C/80 M30802FC M30803FC RBS 3116 0AB0000 IC PROGRAMER M30201F6 SRD4

    J416

    Abstract: No abstract text available
    Text: SMJ4164 65,536-BIT DYNAMIC RANDOM-ACCESS MEMORY JU L Y 1985 - JD PA CKA G E 6 5,5 36 x 1 Organization TO P V IEW I Single 5-V Supply (± 10% Tolerance NCC 1 DC 2 Upward Pin Compatible with '4116 (16K Dynamic RAM) w C 3 RASC 4 Available Temperature Ranges with MILSTD-883C High-Reliability Class B


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    PDF SMJ4164 536-BIT MILSTD-883C 4-12e J416

    J4164

    Abstract: le2032
    Text: SMJ4164 65,536-BIT DYNAMIC RANDOM-ACCESS MEMORY JU LY 1985 - R E V IS E D M A Y 1 9 8 8 JO P A C K A G E • 65.536 x 1 Organization • Single 5-V Supply ± 10% Tolerance • Upward Pin Compatible with '4116 (16K Dynamic RAM) • Available Temperature Ranges with MILSTD-883C High-Reliability Class B


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    PDF SMJ4164 536-BIT MILSTD-883C J4164 le2032

    4116 ram

    Abstract: RAM 4116 4116 16k ram 4116 4116 dynamic ram AT328 4116 MEMORY ci tc 4027 1/4116 16k ram mostek 4116
    Text: MOSTEK 16,384 X 1 Bit Dynamic Ram MK 4116P-2/3 FEATURES □ Recognized industry standard 16-pin config­ uration from MOSTEK □ Common I/O capability using "early write" operation □ 150ns access time, 375ns cycle MK 4116-2 200ns access time, 375ns cycle (MK 4116-3)


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    PDF 4116P-2/3 16-pin 150ns 375ns 200ns 462mW -120V 76/AT3289-2 4116 ram RAM 4116 4116 16k ram 4116 4116 dynamic ram AT328 4116 MEMORY ci tc 4027 1/4116 16k ram mostek 4116

    MK4116-3

    Abstract: 4116 dynamic ram RAM 4116 MK4116 4116 ram wc1f MK4164
    Text: M05TEK 32,768 X1-BIT DYNAMIC RAM MK4332 D -3 FEATURES □ Utilizes tw o industry standard MK 4116 devices in an 18-pin package configuration □ Common I/O capability using "early w rite " operation □ □ □ 200ns access t ime, 3 75ns cycle (MK 4116-3)


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    PDF 768x1-BIT MK4332 18-pin 200ns 375ns 482mW 40rinW MK4332 MK4116-3 4116 dynamic ram RAM 4116 MK4116 4116 ram wc1f MK4164

    4116 ram

    Abstract: 4116 16k ram RAM 4116 MK4116 4116 dynamic ram MK4116-4 mostek 4116 mk4116J 410ns 4116 16K
    Text: MOSTEK AT 16,384x1-BIT DYNAMIC RAM MK4116 J /N /E -4 FEATU R ES □ Recognized in dustry standard 16-pin co n fig ­ u ra tion fro m M O STEK □ C om m on I/O ca p a b ility using "e a rly w rite " operation □ 250ns access tim e , 410ns cycle □ R ead-M odify-W rite, R AS-only refresh, and Page­


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    PDF 384x1-BIT MK4116( 16-pin 250ns 410ns 462mW MK4116 4116 ram 4116 16k ram RAM 4116 4116 dynamic ram MK4116-4 mostek 4116 mk4116J 4116 16K

    MOSTEK MEMORY

    Abstract: k411 74S04 74S158 74S37 MK4027 MK4116 RAM 4116 4027 pin diagram
    Text: MOSTEK COMPATIBLE MK4027 AND MK4116 MEMORY SYSTEM DESIGNS INTRODUCTION Memory Systems design is very much like any other interface design. It requires knowledge o f the system being interfaced to and also an in-depth knowledge o f the resource being interfaced. This in-depth


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    PDF MK4027 MK4116 MK4116. LSI-11* LSI-11 240ns 240ns 344mA MOSTEK MEMORY k411 74S04 74S158 74S37 RAM 4116 4027 pin diagram

    ON4027

    Abstract: MK4116 74537 74537 latch LM 4027 MK 4027 DIODE SCHOTTKY X27 LSI-11 k411 74S04
    Text: MOSTEK COMPATIBLE MK4027 AND MK4116 MEMORY SYSTEM DESIGNS INTRODUCTION Memory Systems design is very much like any other interface design. It requires knowledge of the system being interfaced to and also an in-depth knowledge of the resource being interfaced. This in-depth


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    PDF MK4027 MK4116 MK4116. LSI-11* ON4027 74537 74537 latch LM 4027 MK 4027 DIODE SCHOTTKY X27 LSI-11 k411 74S04

    MOSTEK 36000

    Abstract: 3861 mostek MK2408P MK2500P
    Text: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information


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    PDF 1002P 1007P 1007N MOSTEK 36000 3861 mostek MK2408P MK2500P

    4118 sram

    Abstract: 4116 16k ram MCM6295P25
    Text: MOTOROLA • S E M IC O N D U C T O R TECHNICAL DATA 16K x 4 Bit Synchronous Static RAM MCM6295 With Transparent Outputs and Output Enable The M C M 6295 is a 65,536 bit synchronous static random a ccess m em ory organized as 16,384 w ord s of 4 bits, fabricated using M otorola's se cond-generation high-perfo rm a nce silicon-gate C M O S H C M O S III technology. The device integrates input


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    PDF 6295P25 6295P30 6295NJ25 6295NJ30 6295NJ25R2 6295NJ30R2 MCM6295 4118 sram 4116 16k ram MCM6295P25

    MK4116-4

    Abstract: MKB4116-83 MKB4116-84 MK4116 MK4027 MKB4116-82 MK4116-2 MK4116 ram MOSTEK MEMORY
    Text: MOSTEK AT 16,384 x 1 -BIT DYNAMIC RAM Processed to MIL-STD-883, Method 5004, Class B MKB4116 P /J -82/83/84 MKB4116(E/F)-83/84 FEATURES □ Extended operating tem perature range (-55 °C < < +85°C) D Common I/O capability using "e a rly w rite " operation


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    PDF MIL-STD-883, MKB4116 16-pin 150ns 320ns MKB4116-82) 200ns 375ns MKB4116-83) MK4116-4 MKB4116-83 MKB4116-84 MK4116 MK4027 MKB4116-82 MK4116-2 MK4116 ram MOSTEK MEMORY

    4116 ram

    Abstract: RAM 4116 4116 4116 16k ram MK4116 4116-2 MK 4027 41163 4116 MEMORY i251
    Text: MOSTEX 16,384 X 1-BIT DYNAMIC RAM MK4116 J /N /E -2 /3 FEATURES □ Recognized industry standard 16-pin config­ uration fro m M O S T E K □ C om m on I/O capa b ility using "early w rite " operation □ 150ns access tim e , 3 2 0 n s c y c le (M K 4 1 1 6 -2 )


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    PDF MK4116 16-pin 150ns 320nscycle 200ns 375ns 462mW 4116 ram RAM 4116 4116 4116 16k ram 4116-2 MK 4027 41163 4116 MEMORY i251

    TMS4116

    Abstract: TMS4132
    Text: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible


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    PDF 768-BIT 18-PIN 200ACCESS 4132JD TMS4116 TMS4132

    F16B

    Abstract: CCA20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62990A 16K x 16 Bit Synchronous Fast Static RAM T h e M C M 6 2 9 9 0 A is a 2 6 2 ,1 4 4 b it s y n c h ro n o u s s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d a s 1 6 ,3 8 4 w o rd s o f 16 b its , fa b ric a te d u s in g M o to ro la ’s h ig h - p e r fo r ­


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    PDF MCM62990A 2990A 62990AFN 62990AFN15 62990AFN20 62990AFN25 F16B CCA20

    F4116-2

    Abstract: F4116-3 F4116-4 Y-E111 1-OF-128
    Text: F4116 1 6 ,3 8 4 x 1 Dynamic RAM M O S M em ory P roducts Logic Sym bol D escrip tio n The F 4 1 16 is a 16,384-bit MOS dynam ic Random A c c e s s M em ory RAM co n fig ure d as 16,384 o n e-bit w o rd s . It is m anufactured using F a irc h ild ’s n-channel


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    PDF F4116 384x1 F4116 384-bit 16-pin F4116-2 F4116-3 F4116-4 Y-E111 1-OF-128

    L45B

    Abstract: No abstract text available
    Text: MHS electronic June 1992 M 6 7 1 3 2 /M 6 7 1 4 2 HI-REL DATA SHEET 2kx8 CMOS DUAL PORT RAM FEATURES ACCESS TIME MILITARY : 35 TO 55 ns max . BUSY OUTPUT FLAG ON MASTER 67132L/67142L LOW POWER 67132V/67142V VERY LOW POWER FULLY ASYNCHRONOUS OPERATION FROM


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    PDF 67132L/67142L 7132V/67142V 67132/M 67132EV 5Bbfl45b G0Q40b4 L45B

    TMS9900

    Abstract: OZ 9930 pal 007c TMS9929 oloa 8888 oloa 8888 LUBRICANT TMS9918 TMS9929A 9928A TM990
    Text: T exas In s t r u m e n t s 9900 TMS9918A/TMS9928A/TMS9929A Video Display Processors “ MICROPROCESSOR SERIES ” IM PO RTANT NOTICES T exas In strum en ts reserves the rig h t to make changes at any tim e in order to im prove design and to supply th e best


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    PDF TMS9918A/TMS9928A/TMS9929A 928A/ 4116-XX MP010A TMS9900 OZ 9930 pal 007c TMS9929 oloa 8888 oloa 8888 LUBRICANT TMS9918 TMS9929A 9928A TM990

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S SAB-C502 8-Bit CMOS Microcontroller • Fully compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing


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    PDF SAB-C502 SAB-C502-2R 15-bit P-DIP-40 P-LCC-44 SAF-C502 SAB-C502-L C502-2R SAB-C501

    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


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    MC801

    Abstract: SAB-502-2R RC2H C5022 sab-502 TCON application 80C52 SAB-C502 SAF-C502
    Text: SIE M E N S SAB-C502 8-Bit CMOS Microcontroller • Fully compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing


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    PDF SAB-C502 SAB-C502-2R 15-bit P-DIP-40 P-LCC-44 SAB-C502 SAF-C502 SAB-C502-L C502-2R SAB-C501 MC801 SAB-502-2R RC2H C5022 sab-502 TCON application 80C52

    ic vertical la 78141

    Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
    Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices


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    PDF CH-8953 ic vertical la 78141 IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram

    74LS189 equivalent

    Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
    Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.


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    PDF AMD-599 LM101 SN54LS01 132nd 74LS189 equivalent 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00