FZH115B
Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Text: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P
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74INTEGRATED
Line-to-10
150ns
16-DIL
150ns
18-pin
250ns
300ns
FZH115B
fzh261
FZK105
FZH131
FZJ111
FZH115
FZH205
Multiplexer IC 74151
FZH265B
74LS104
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RBS 3116
Abstract: 3PRCR
Text: MITSUBISHI SINGLE-CHIP MICROCOMPUTERS M16C/60, M16C/20, M16C/80 Series Application Note < Flash Memory Control> Preliminary Mitsubishi Electric Corporation Kitaitami Works Mitsubishi Electric Semiconductor Systems Corporation Mitsubishi Electric System LSI Design Corporation
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M16C/60,
M16C/20,
M16C/80
lmc30
RBS 3116
3PRCR
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RBS 3116
Abstract: 0AB0000 IC PROGRAMER M30201F6 SRD4
Text: MITSUBISHI SINGLE-CHIP MICROCOMPUTERS M16C/60, M16C/20, M16C/80 Series Application Note < Flash Memory Control> Preliminary Mitsubishi Electric Corporation Kitaitami Works Mitsubishi Electric Semiconductor Systems Corporation Mitsubishi Electric System LSI Design Corporation
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M16C/60,
M16C/20,
M16C/80
M30802FC
M30803FC
RBS 3116
0AB0000
IC PROGRAMER
M30201F6
SRD4
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J416
Abstract: No abstract text available
Text: SMJ4164 65,536-BIT DYNAMIC RANDOM-ACCESS MEMORY JU L Y 1985 - JD PA CKA G E 6 5,5 36 x 1 Organization TO P V IEW I Single 5-V Supply (± 10% Tolerance NCC 1 DC 2 Upward Pin Compatible with '4116 (16K Dynamic RAM) w C 3 RASC 4 Available Temperature Ranges with MILSTD-883C High-Reliability Class B
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SMJ4164
536-BIT
MILSTD-883C
4-12e
J416
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J4164
Abstract: le2032
Text: SMJ4164 65,536-BIT DYNAMIC RANDOM-ACCESS MEMORY JU LY 1985 - R E V IS E D M A Y 1 9 8 8 JO P A C K A G E • 65.536 x 1 Organization • Single 5-V Supply ± 10% Tolerance • Upward Pin Compatible with '4116 (16K Dynamic RAM) • Available Temperature Ranges with MILSTD-883C High-Reliability Class B
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SMJ4164
536-BIT
MILSTD-883C
J4164
le2032
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4116 ram
Abstract: RAM 4116 4116 16k ram 4116 4116 dynamic ram AT328 4116 MEMORY ci tc 4027 1/4116 16k ram mostek 4116
Text: MOSTEK 16,384 X 1 Bit Dynamic Ram MK 4116P-2/3 FEATURES □ Recognized industry standard 16-pin config uration from MOSTEK □ Common I/O capability using "early write" operation □ 150ns access time, 375ns cycle MK 4116-2 200ns access time, 375ns cycle (MK 4116-3)
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4116P-2/3
16-pin
150ns
375ns
200ns
462mW
-120V
76/AT3289-2
4116 ram
RAM 4116
4116 16k ram
4116
4116 dynamic ram
AT328
4116 MEMORY
ci tc 4027
1/4116 16k ram
mostek 4116
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MK4116-3
Abstract: 4116 dynamic ram RAM 4116 MK4116 4116 ram wc1f MK4164
Text: M05TEK 32,768 X1-BIT DYNAMIC RAM MK4332 D -3 FEATURES □ Utilizes tw o industry standard MK 4116 devices in an 18-pin package configuration □ Common I/O capability using "early w rite " operation □ □ □ 200ns access t ime, 3 75ns cycle (MK 4116-3)
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768x1-BIT
MK4332
18-pin
200ns
375ns
482mW
40rinW
MK4332
MK4116-3
4116 dynamic ram
RAM 4116
MK4116
4116 ram
wc1f
MK4164
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4116 ram
Abstract: 4116 16k ram RAM 4116 MK4116 4116 dynamic ram MK4116-4 mostek 4116 mk4116J 410ns 4116 16K
Text: MOSTEK AT 16,384x1-BIT DYNAMIC RAM MK4116 J /N /E -4 FEATU R ES □ Recognized in dustry standard 16-pin co n fig u ra tion fro m M O STEK □ C om m on I/O ca p a b ility using "e a rly w rite " operation □ 250ns access tim e , 410ns cycle □ R ead-M odify-W rite, R AS-only refresh, and Page
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384x1-BIT
MK4116(
16-pin
250ns
410ns
462mW
MK4116
4116 ram
4116 16k ram
RAM 4116
4116 dynamic ram
MK4116-4
mostek 4116
mk4116J
4116 16K
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MOSTEK MEMORY
Abstract: k411 74S04 74S158 74S37 MK4027 MK4116 RAM 4116 4027 pin diagram
Text: MOSTEK COMPATIBLE MK4027 AND MK4116 MEMORY SYSTEM DESIGNS INTRODUCTION Memory Systems design is very much like any other interface design. It requires knowledge o f the system being interfaced to and also an in-depth knowledge o f the resource being interfaced. This in-depth
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MK4027
MK4116
MK4116.
LSI-11*
LSI-11
240ns
240ns
344mA
MOSTEK MEMORY
k411
74S04
74S158
74S37
RAM 4116
4027 pin diagram
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ON4027
Abstract: MK4116 74537 74537 latch LM 4027 MK 4027 DIODE SCHOTTKY X27 LSI-11 k411 74S04
Text: MOSTEK COMPATIBLE MK4027 AND MK4116 MEMORY SYSTEM DESIGNS INTRODUCTION Memory Systems design is very much like any other interface design. It requires knowledge of the system being interfaced to and also an in-depth knowledge of the resource being interfaced. This in-depth
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MK4027
MK4116
MK4116.
LSI-11*
ON4027
74537
74537 latch
LM 4027
MK 4027
DIODE SCHOTTKY X27
LSI-11
k411
74S04
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MOSTEK 36000
Abstract: 3861 mostek MK2408P MK2500P
Text: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information
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1002P
1007P
1007N
MOSTEK 36000
3861 mostek
MK2408P
MK2500P
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4118 sram
Abstract: 4116 16k ram MCM6295P25
Text: MOTOROLA • S E M IC O N D U C T O R TECHNICAL DATA 16K x 4 Bit Synchronous Static RAM MCM6295 With Transparent Outputs and Output Enable The M C M 6295 is a 65,536 bit synchronous static random a ccess m em ory organized as 16,384 w ord s of 4 bits, fabricated using M otorola's se cond-generation high-perfo rm a nce silicon-gate C M O S H C M O S III technology. The device integrates input
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6295P25
6295P30
6295NJ25
6295NJ30
6295NJ25R2
6295NJ30R2
MCM6295
4118 sram
4116 16k ram
MCM6295P25
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MK4116-4
Abstract: MKB4116-83 MKB4116-84 MK4116 MK4027 MKB4116-82 MK4116-2 MK4116 ram MOSTEK MEMORY
Text: MOSTEK AT 16,384 x 1 -BIT DYNAMIC RAM Processed to MIL-STD-883, Method 5004, Class B MKB4116 P /J -82/83/84 MKB4116(E/F)-83/84 FEATURES □ Extended operating tem perature range (-55 °C < < +85°C) D Common I/O capability using "e a rly w rite " operation
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MIL-STD-883,
MKB4116
16-pin
150ns
320ns
MKB4116-82)
200ns
375ns
MKB4116-83)
MK4116-4
MKB4116-83
MKB4116-84
MK4116
MK4027
MKB4116-82
MK4116-2
MK4116 ram
MOSTEK MEMORY
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4116 ram
Abstract: RAM 4116 4116 4116 16k ram MK4116 4116-2 MK 4027 41163 4116 MEMORY i251
Text: MOSTEX 16,384 X 1-BIT DYNAMIC RAM MK4116 J /N /E -2 /3 FEATURES □ Recognized industry standard 16-pin config uration fro m M O S T E K □ C om m on I/O capa b ility using "early w rite " operation □ 150ns access tim e , 3 2 0 n s c y c le (M K 4 1 1 6 -2 )
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MK4116
16-pin
150ns
320nscycle
200ns
375ns
462mW
4116 ram
RAM 4116
4116
4116 16k ram
4116-2
MK 4027
41163
4116 MEMORY
i251
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TMS4116
Abstract: TMS4132
Text: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible
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768-BIT
18-PIN
200ACCESS
4132JD
TMS4116
TMS4132
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F16B
Abstract: CCA20
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62990A 16K x 16 Bit Synchronous Fast Static RAM T h e M C M 6 2 9 9 0 A is a 2 6 2 ,1 4 4 b it s y n c h ro n o u s s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d a s 1 6 ,3 8 4 w o rd s o f 16 b its , fa b ric a te d u s in g M o to ro la ’s h ig h - p e r fo r
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MCM62990A
2990A
62990AFN
62990AFN15
62990AFN20
62990AFN25
F16B
CCA20
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F4116-2
Abstract: F4116-3 F4116-4 Y-E111 1-OF-128
Text: F4116 1 6 ,3 8 4 x 1 Dynamic RAM M O S M em ory P roducts Logic Sym bol D escrip tio n The F 4 1 16 is a 16,384-bit MOS dynam ic Random A c c e s s M em ory RAM co n fig ure d as 16,384 o n e-bit w o rd s . It is m anufactured using F a irc h ild ’s n-channel
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F4116
384x1
F4116
384-bit
16-pin
F4116-2
F4116-3
F4116-4
Y-E111
1-OF-128
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L45B
Abstract: No abstract text available
Text: MHS electronic June 1992 M 6 7 1 3 2 /M 6 7 1 4 2 HI-REL DATA SHEET 2kx8 CMOS DUAL PORT RAM FEATURES ACCESS TIME MILITARY : 35 TO 55 ns max . BUSY OUTPUT FLAG ON MASTER 67132L/67142L LOW POWER 67132V/67142V VERY LOW POWER FULLY ASYNCHRONOUS OPERATION FROM
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67132L/67142L
7132V/67142V
67132/M
67132EV
5Bbfl45b
G0Q40b4
L45B
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TMS9900
Abstract: OZ 9930 pal 007c TMS9929 oloa 8888 oloa 8888 LUBRICANT TMS9918 TMS9929A 9928A TM990
Text: T exas In s t r u m e n t s 9900 TMS9918A/TMS9928A/TMS9929A Video Display Processors “ MICROPROCESSOR SERIES ” IM PO RTANT NOTICES T exas In strum en ts reserves the rig h t to make changes at any tim e in order to im prove design and to supply th e best
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TMS9918A/TMS9928A/TMS9929A
928A/
4116-XX
MP010A
TMS9900
OZ 9930
pal 007c
TMS9929
oloa 8888
oloa 8888 LUBRICANT
TMS9918
TMS9929A
9928A
TM990
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Untitled
Abstract: No abstract text available
Text: SIEM EN S SAB-C502 8-Bit CMOS Microcontroller • Fully compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing
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SAB-C502
SAB-C502-2R
15-bit
P-DIP-40
P-LCC-44
SAF-C502
SAB-C502-L
C502-2R
SAB-C501
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
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MC801
Abstract: SAB-502-2R RC2H C5022 sab-502 TCON application 80C52 SAB-C502 SAF-C502
Text: SIE M E N S SAB-C502 8-Bit CMOS Microcontroller • Fully compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing
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SAB-C502
SAB-C502-2R
15-bit
P-DIP-40
P-LCC-44
SAB-C502
SAF-C502
SAB-C502-L
C502-2R
SAB-C501
MC801
SAB-502-2R
RC2H
C5022
sab-502
TCON application
80C52
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ic vertical la 78141
Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices
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CH-8953
ic vertical la 78141
IC LA 78141 schematic
LA 78141 tv application circuit
4116 ram
tda 78141
TMS4500
LA 78141 VERTICAL
21L14
mitsubishi elevator circuit diagram
4464 64k dram
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74LS189 equivalent
Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.
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AMD-599
LM101
SN54LS01
132nd
74LS189 equivalent
74LS200
AmZ8036
Z8104
74LS300
AM9511
Am2505
27s13
54S244
27LS00
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