sot23 w32
Abstract: SOT23 DMB BA39-00628A TESA4982 HED55XXU12 BA41-00725A SMD Code 12W SOT-23 A3212ELH/HED55XXU12 LF80537NE0301MN w342 9g
Text: Main System Design location Level Parts Code Parts Description Spec.
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WLL3141
BA44-00238A
BA44-00243A
BA44-00162A
BA42-00133A
BA59-02154A
BA92-04714A
BA99-07566A
BA70-00388A
BA39-00431A
sot23 w32
SOT23 DMB
BA39-00628A
TESA4982
HED55XXU12
BA41-00725A
SMD Code 12W SOT-23
A3212ELH/HED55XXU12
LF80537NE0301MN
w342 9g
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samsung R540 service
Abstract: L0613 samsung R540 service manual atheros ar5B95 JLCD501 AC82GL40 ATHEROS WLL6160-D99 DAC-09N019 4309-00 ltn156at01
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. - - This Document can not be used without Samsung's authorization. – 6. Material List Level 1 Parts Code Assembled EA Spec. Description ,-
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BA44-00242A
BA62-00484B
BA62-00484A
BA31-00062A
BA31-00062B
BA96-04071A
BA97-02919A
BA81-04551A
BA75-02201D
BA81-06575A
samsung R540 service
L0613
samsung R540 service manual
atheros ar5B95
JLCD501
AC82GL40
ATHEROS WLL6160-D99
DAC-09N019
4309-00
ltn156at01
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radiation hardened IGBT
Abstract: RIC7113E4 IRF820A RIC7113 RIC7113L4 PD-93920A
Text: PD-93920A RIC7113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary Features n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage
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PD-93920A
RIC7113E4
radiation hardened IGBT
RIC7113E4
IRF820A
RIC7113
RIC7113L4
PD-93920A
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samsung R540 service
Abstract: AR2413 10029a 2402-001144 LTM170EX R40PLUS BA99-10026A HP100-C30N-N15 M170EU01 C547 smd
Text: 10. Electrical Part List Main System Parts Code Location XP_HOME,W/O_BA G 6801-001239 WARRANTY 6801-001535 E-BOOK COUPON BA46-05935A S/W Media BA46-05530A OS CD BA68-03737A OS Manual BA81-00991A MOUSE PAD Part Name BA44-00215A Lishin-90W ASSY ACCESSORYXP_HOME
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BA99-10026A
ADA10
SE-1013)
SE-1007)
BA81-03413A
samsung R540 service
AR2413
10029a
2402-001144
LTM170EX
R40PLUS
HP100-C30N-N15
M170EU01
C547 smd
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MO-036AB
Abstract: IRF820A RIC7113 RIC7113L4
Text: PD-93921B RIC7113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary Features n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage
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PD-93921B
RIC7113L4
MO-036AB
IRF820A
RIC7113
RIC7113L4
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RIC7113L4
Abstract: radiation hardened IGBT RIC7113 IRF820A MO-036AB PD-93921
Text: PD-93921 RIC7113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary Features n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage
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PD-93921
RIC7113L4
Description252-7105
RIC7113L4
radiation hardened IGBT
RIC7113
IRF820A
MO-036AB
PD-93921
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IR RIC7113E4
Abstract: IRF820A RIC7113 RIC7113E4 RIC7113L4
Text: PD-93920 RIC7113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Product Summary Features n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage
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PD-93920
RIC7113E4
Description252-7105
IR RIC7113E4
IRF820A
RIC7113
RIC7113E4
RIC7113L4
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ric7113a4
Abstract: IRF820A RIC7113 RIC7113L4
Text: PD - 94703 RIC7113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100K Rad Si n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage
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RIC7113A4
ric7113a4
IRF820A
RIC7113
RIC7113L4
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smd diode U12 c526
Abstract: CAP SMD X7R 100NF 50V 10 smd diode c644 smd diode c549 smd DIODE c728 smd diode c731 SCB-1000S smd diode c548 C536 smd diode smd diode U12 C647
Text: Option SEC CODE BA96-03242A BA59-01900A BA81-03428A BA75-01863B BA96-03241A BA59-01970A BA81-03428A BA75-01863B BA96-03239A BA59-01985B BA81-03428A BA75-01863A BA96-03223A BA59-02020A BA81-03428A BA75-01863B BA96-03222A BA59-01953A BA81-03428A BA75-01863A
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BA96-03242A
BA59-01900A
BA81-03428A
BA75-01863B
BA96-03241A
BA59-01970A
BA96-03239A
BA59-01985B
smd diode U12 c526
CAP SMD X7R 100NF 50V 10
smd diode c644
smd diode c549
smd DIODE c728
smd diode c731
SCB-1000S
smd diode c548
C536 smd diode
smd diode U12 C647
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581000P
Abstract: CXK581
Text: SONY» C X K 5 8 1 0 0 0 P / M -10L/12L/15L -10LL712LL/15LL 131072-word X 8-bit High Speed CMOS Static RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this
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-10L/12L/15L
-10LL712LL/15LL
131072-word
CXK581000P/M
CXK581000P/M-10L/1OLL
100ns
CXK581000P/M-12L/12LL
120ns
CXK581000P/M-15L/15LL
150ns
581000P
CXK581
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Untitled
Abstract: No abstract text available
Text: HM62V864 Series 65536-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-316B Z Rev. 2.0 Jul. 25, 1995 Description The Hitachi HM62V864 is a CMOS static RAM organized 64-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 fim Hi-CMOS process technology. It
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HM62V864
65536-word
ADE-203-316B
64-kword
525-mil
460-mil
HM62V864LFP
FP-32D)
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74AC240
Abstract: No abstract text available
Text: e n S C S -T H O M S O N iliCTOÏOTD 74A C 240 OCTAL BUS BUFFER WITH 3 STATE OUTPUTS INVERTED . HIGH SPEED: = 4 ns (TYP.) at Vcc = 5V . LOW POWER DISSIPATION: Ice = 8 nA (MAX.) at TA = 25 °C . HIGH NOISE IMMUNITY: V nih = V nil = 28% VCC (MIN.) . 50Q TRANSMISSION LINE DRIVING
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74AC240M
AC240
wiring50%
71S1E37
74AC240
74AC240
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MIC710
Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
Text: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes
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110-E77-20.
MIC710
XC6875
MC1741L
C4558C
SG425
mc7724c
NE533V
General Instrument data book
741p
SN75107
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MC1466
Abstract: MC1466L MC1466L equivalent schematic of mc1466 1E75 MJE340 REGULATOR DM 0265 R pin EQUIVALENT ITT 1N4001 7905 positive voltage regulator MC1466 L
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PRECISION WIDE RANGE VOLTAGE and CURRENT REGULATOR PRECISION WIDE RANGE VOLTAGE AND CURRENT REGULATOR T h is u n iq u e “f lo a t in g " re g u la t o r c a n d e liv e r h u n d r e d s o f v o lt s — lim ite d o n ly b y th e b r e a k d o w n v o lt a g e o f th e e x te rn a l s e rie s
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MC1466L
CMH30HO:
MC1466
MC1466L equivalent
schematic of mc1466
1E75
MJE340 REGULATOR
DM 0265 R pin EQUIVALENT
ITT 1N4001
7905 positive voltage regulator
MC1466 L
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74AC244
Abstract: No abstract text available
Text: SGS-THOMSON :!LI Sra M(§S 74AC244 OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED HIGH SPEED: Ipd = 4 ns (TYP.) at Vcc = 5V • LOW POWER DISSIPATION: Ice = 8 nA (MAX.) at TA = 25 °C . HIGH NOISE IMMUNITY: Vnih = V nil = 28% Vcc (MIN.) . 50ft TRANSMISSION LINE DRIVING
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74AC244
74AC244M
AC244
7T2T237
P013L
74AC244
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Untitled
Abstract: No abstract text available
Text: HM62V256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-136E Z Rev. 5.0 Jun. 19, 1995 Features • Low voltage operation SRAM Operating Supply Voltage: 2.7 V to 3.6 V • 0.8 [xm Hi-CMOS process • High speed • Low power
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HM62V256
768-word
ADE-203-136E
HM62V256LFP-10T
HM62V256LFP-7SLT
HM62V256LFP-10SLT
HM62V256LFP-8ULT
HM62V256LT-10
HM62V256LT-8SL
HM62V256LTM-10
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74AC244
Abstract: TFK U 217 B 74AC244M AC244 S020
Text: * 7 / SGS-THOMSON IILECTISlPiDlgl 74AC244 OCTAL BUS BUFFER WITH 3 STATE OUTPUTS NON INVERTED . . . . • ■ . . . HIGH SPEED: tpD = 4 n s (T Y P .)a tV c c = 5V LOW POWER DISSIPATION: Ice = 8 pA (MAX.) at TA = 25 °C HIGH NOISE IMMUNITY: V nih = V nil = 28% Vcc (MIN.)
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74AC244
AC244
77c11b
P013L
74AC244
TFK U 217 B
74AC244M
S020
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Untitled
Abstract: No abstract text available
Text: |Ordering number : EN4163 Asynchronous Silicon Gate CM O S LSI LC36256AL, AML-70/85/10/12 No. 4163 S A iIVO 256 K 32768 words x 8 bits SRA M Overview Package Dimensions The LC 36256A L, A M L -70/85/10/12 are fully asynchronous silicon gate CMOS static RAMs with an
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EN4163
LC36256AL,
AML-70/85/10/12
6256A
DIP28
LC36256low-level.
LC36256AU
DG153bb
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MC1466L equivalent
Abstract: MC1466L MC1466 schematic of mc1466
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PRECISION WIDE RANGE VOLTAGE AND CURRENT REGULATOR PRECISION WIDE RANGE VOLTAGE and CURRENT REGULATOR T his un iq u e " flo a tin g " reg u lato r can d e liv e r h u n d red s o f volts — lim ite d o n ly by th e b reak d o w n v o lta g e o f th e extern al series
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MC1466
MJE340
MC1466L
O-TO-250
MPS6S65
MC1466L equivalent
MC1466L
schematic of mc1466
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PDF
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Untitled
Abstract: No abstract text available
Text: HM62V256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-136E Z Rev. 5.0 Jun. 19, 1995 Features • Low voltage operation SRAM Operating Supply Voltage: 2.7 V to 3.6 V • 0.8 (im Hi-CMOS process • High speed Access time: 70/85/100 ns (max)
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HM62V256
768-word
ADE-203-136E
HM62V256LFP-10T
HM62V256LFP-7SLT
HM62V256LFP-10SLT
HM62V256LFP-8ULT
HM62V256LT-10
HM62V256LT-8SL
HM62V256LTM-10
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hm62864
Abstract: No abstract text available
Text: HM62864 Seríes 65536-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-255B Z Rev. 2.0 Jul. 4, 1995 Description The Hitachi HM62864 is a CMOS static RAM organized 64-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 ¡xm Hi-CMOS process technology. It offers low
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OCR Scan
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HM62864
65536-word
ADE-203-255B
64-kword
525-mil
460-mil
HM62864LFP
FP-32D)
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PDF
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Untitled
Abstract: No abstract text available
Text: r r z SGS-THOMSON Ä 7# M54HC4016 M74HC4016 QUAD BILATERAL SWITCH • HIGH SPEED tpD = 9 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY Vnih = V n il = 28 % V cc (MIN.) ■ LOW "ON" RESISTANCE R on = 60 £2 (TYP.) AT Vcc = 9 V, li/o = 100 nA
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M54HC4016
M74HC4016
4016B
M54HC4016F1R
M74HC4016M1R
M74HC4016B1R
M74HC4016C1R
ti2TS37
M54/M74HC4016
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PDF
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LC36648ML-85
Abstract: G8TE LC3664BL-10 LC3664BML-10 LC36648 lc3664* sanyo cwI 1011 LC3664BL LC3664BL-70 LC3664BL-85
Text: Asynchronous Silicon Gate CMOS LSI LC3664BL, BML-70/85/1Ô7Ï2 64 K 8192 w ords x 8 bits SR A M Overview Package Dimensions T h e L C 3 6 6 4 B L . BM L-70/85/10/12 are fu lly asynchronous silicon gate C M O S static R A M * w ith an 8192 words x 8 bits.
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LC3664BL,
BML-70/85/10/12
LC3664BL-70.
LC3664BML-70
LC3664BL-85.
LC3664BML-85
LC3664BL-10.
LC3664BML-10
LC3664BL-I2.
LC3664BML-I2
LC36648ML-85
G8TE
LC3664BL-10
LC36648
lc3664* sanyo
cwI 1011
LC3664BL
LC3664BL-70
LC3664BL-85
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MFC6034
Abstract: MFC4040 MFC 4060A mc1312 MC1303 MC1371p lt 8202 mc1741 2n3055 application note LT 8224 TRANSISTOR triac tag 8518
Text: GENERAL INFORMATION Master Index Product Highlights 2 Selector Guides 3 Previews of Coming Linear Integrated Circuits Interchangeability Guide 5 Chip Information 6 M IL-M -38510 Program DATA SHEET SPECIFICATIONS 8 . . . in alpha-numerical sequence by device type number, unless otherwise
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