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Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PHILIPS INTERNATIONAL bSE D • 711GÖ2b GübM3Gl Sb7 H P H I N Philips Semiconductors Product Specification BUK637-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. |
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BUK637-400B 711DflSb 0Qb43D5 |