Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    0Q317 Search Results

    0Q317 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb 53^ 31 0Q317S T 63b NPN 1 GHz video transistors “ '— H A P X Product specification BFQ263; BFQ263A N AnER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a


    OCR Scan
    PDF 0Q317S BFQ263; BFQ263A 0D317b3

    BFQ234

    Abstract: BFQ254 UBB364 SOT-172A
    Text: Philips Semiconductors L jb £ 3 ^ 3 1 0Q31714 b7fl BBAPX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I b'lE T> N Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and


    OCR Scan
    PDF 00317m BFQ234; BFQ234/I OT172A1 OT172A3 BFQ234 OT172A1) BFQ234/I bbS3T31 BFQ254 UBB364 SOT-172A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a


    OCR Scan
    PDF BFQ268; BFQ268/I BFQ268 UB8670 DD31771 LA123-

    Untitled

    Abstract: No abstract text available
    Text: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699A Z Rev. 1.0 Dec. 27,1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1


    OCR Scan
    PDF HB56HW164DB HB56HW165DB 576-word 64-bit ADE-203-699A 16-Mbit HM51W16165) 24C02)

    HB56HW465

    Abstract: No abstract text available
    Text: HB56HW465DB Series 4196304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-666 Z Preliminary Rev. 0.0 Sep .17,1996 Description The HB56HW465DB Series is a 4 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O. DIMM), mounted 4 pieces of 64-Mbit DRAM (HM5165165ATT) sealed in TSOP package and 1


    OCR Scan
    PDF HB56HW465DB 4196304-word 64-bit ADE-203-666 64-Mbit HM5165165ATT) 24C02) HB56HW465DB HB56HW465

    QML-38535

    Abstract: 320C80-50 17306A TIL Display SMD AH MRI circuit xxmx
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA REV SHEET 55 56 57 58 59 60 61 62 63 64 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV SHEET REV


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 3PE D • 7 T 5 |:] 2 3 7 GG317ÖD S ■ f Z 7 SGS-THOMSON ^7# 'P Z S -O S DC 34/DC 38/DC 42 S G S-THOMSON TRIGGER DIODES A P P L IC A T IO N S Thyristors and triacs triggering. ADVANTAG ES High reliability glass passivation insuring parame­ ter stability and protection against junction conta­


    OCR Scan
    PDF GG317 34/DC 38/DC D88DB34-1 0Q317

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLCS-900 Series TM P93CM40/TMP93CM41 Low Voltage/Low Power CMOS 16-bit Microcontrollers TMP93CM40F/TMP93CM41F 1. Outline and Device Characteristics TMP93CM40/M41 are high-speed advanced 16-bit microcon­ trollers developed for controlling medium to large-scale equip­


    OCR Scan
    PDF TLCS-900 P93CM40/TMP93CM41 16-bit TMP93CM40F/TMP93CM41F TMP93CM40/M41 TMP93CM41 TMP96CM40 TMP93CM40F/TMP93CM41 100-pin

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^53*131 0031743 341 • APX PNP 1 GHz video transistors ^ Product specification BFQ255; BFQ255A N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product


    OCR Scan
    PDF BFQ255; BFQ255A O-202) BFQ235 BFQ235A 0Q317MA UBB688 bb53T31

    KM29V64001T

    Abstract: v6400
    Text: KM29 V 6 4 0 0 1 T Fl ash ELECTRONICS 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64001T/R is a 8M 8,388,608 x8 bit NAND Flash memory with a spare 256K(262,144)x8 bit. Its NAND cell provides the most cost-effective solution for


    OCR Scan
    PDF V64001 200us KM29V64001T 003177G KM29V64001T v6400

    transistor bt 808

    Abstract: BFQ235A BFQ255A BFQ235 transistors C2035 CECC50000 BFQ235 BFQ255
    Text: bbS3T31 P hilips Sem iconductors 0 031716 B I B lB^AF|X^^^^^^roduc^pecification NPN 1 GHz video transistors — — ^ BFQ235; BFQ235A N AMER PHILIPS/DISCRETE b'îE D — PINNING FEATURES • High breakdown voltages DESCRIPTION PIN • Low output capacitance


    OCR Scan
    PDF bbS3T31 BFQ235; BFQ235A OT128B BFQ255 BFQ255A bbS3131 BFQ235A transistor bt 808 BFQ235 transistors C2035 CECC50000 BFQ235