E30A23VS
Abstract: A30S
Text: SEMICONDUCTOR E30A23VS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30S E30A23VS A : Voltage classification 0D24
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E30A23VS
E30A23VS
A30S
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B35R
Abstract: Z6W27V DO-218 do218 Z6W27
Text: SEMICONDUCTOR Z6W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B35R 0D24 No. Item 1 Description Bar N(-) Type B35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z6W27V
DO-218
B35R
Z6W27V
do218
Z6W27
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b30r
Abstract: Z5W27V b30r 0d24 marking b30r do-218 do218 1b30r
Text: SEMICONDUCTOR Z5W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B30R 0D24 No. Item 1 Description Bar N(-) Type B30R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z5W27V
DO-218
b30r
Z5W27V
b30r 0d24
marking b30r
do218
1b30r
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e35r
Abstract: Z5W37V do-218 do218
Text: SEMICONDUCTOR Z5W37V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 E35R 0D24 No. Item 1 Description Bar N(-) Type E35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z5W37V
DO-218
e35r
Z5W37V
do218
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Z4W27V
Abstract: DO-218 B25R do218 month marking
Text: SEMICONDUCTOR Z4W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B25R 0D24 No. Item 1 Description Bar N(-) Type B25R B : Voltage Classification Lot No. 2008. 7. 2 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z4W27V
DO-218
Z4W27V
B25R
do218
month marking
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transistor day
Abstract: diode 30s Diode MarkING N MARKING CMR E30A2CS
Text: SEMICONDUCTOR E30A2CS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 30S 0D24 E30A2CS Year 0~9 : 2000~2009 D Month
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E30A2CS
transistor day
diode 30s
Diode MarkING N
MARKING CMR
E30A2CS
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1A30R
Abstract: MARKING CMR A30R E30A23VR
Text: SEMICONDUCTOR E30A23VR MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30R E30A23VR A : Voltage classification 0D24
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E30A23VR
1A30R
MARKING CMR
A30R
E30A23VR
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E35A2CR
Abstract: e35a Diode MarkING N
Text: SEMICONDUCTOR E35A2CR MARKING SPECIFICATION MR PACKAGE 1. Marking method Laser Marking 2. Marking 1 35R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 35R 0D24 E35A2CR Year 0~9 : 2000~2009 D Month
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E35A2CR
E35A2CR
e35a
Diode MarkING N
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do-218
Abstract: H35R Z5W48V do218 diode 218 transistor day
Text: SEMICONDUCTOR Z5W48V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 H35R 0D24 No. Item 1 Description Bar N(-) Type H35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z5W48V
DO-218
H35R
Z5W48V
do218
diode 218
transistor day
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MARKING CMR
Abstract: Diode MarkING N E30A2CR 0D24
Text: SEMICONDUCTOR E30A2CR MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 30R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 30R 0D24 E30A2CR Year 0~9 : 2000~2009 D Month
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E30A2CR
MARKING CMR
Diode MarkING N
E30A2CR
0D24
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E35A2CS
Abstract: Diode MarkING N
Text: SEMICONDUCTOR E35A2CS MARKING SPECIFICATION MR PACKAGE 1. Marking method Laser Marking 2. Marking 1 35S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 35S 0D24 E35A2CS Year 0~9 : 2000~2009 D Month
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E35A2CS
E35A2CS
Diode MarkING N
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18n5o
Abstract: BA2N15 SGX530 PowerVR SGX530 0x4803 Ps3 MOTHERBOARD CIRCUIT diagram DDR2-800 AM38x 15F4 17 inch lcd monitor
Text: AM3894 AM3892 www.ti.com SPRS681A – OCTOBER 2010 – REVISED MARCH 2011 AM389x Sitara ARM Microprocessors MPUs Check for Samples: AM3894, AM3892 1 Device Summary 1.1 Features • High-Performance Sitara ARM Microprocessors (MPUs) – ARM® Cortex™-A8 RISC MPU
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AM3894
AM3892
SPRS681A
AM389x
AM3894,
VFPv3-IEEE754
32K-Byte
256K-Byte
64K-Byte
18n5o
BA2N15
SGX530
PowerVR SGX530
0x4803
Ps3 MOTHERBOARD CIRCUIT diagram
DDR2-800
AM38x
15F4
17 inch lcd monitor
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Untitled
Abstract: No abstract text available
Text: TMS320DM8168, TMS320DM8167 TMS320DM8166, TMS320DM8165 www.ti.com SPRS614 – MARCH 2011 TMS320DM816x DaVinci Digital Media Processors Check for Samples: TMS320DM8168, TMS320DM8167, TMS320DM8166, TMS320DM8165 1 Device Summary 1.1 Features • High-Performance DaVinci Digital Media
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TMS320DM8168,
TMS320DM8167
TMS320DM8166,
TMS320DM8165
SPRS614
TMS320DM816x
TMS320DM8167,
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Untitled
Abstract: No abstract text available
Text: bb53T31 0D24073 b03 H A P X Philips Semiconductors Product specification PN4416; PN4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE b?E ]> Q U IC K R E F E R E N C E DATA FEATURES SYM BOL • Low noise • Interchangeability of drain and source connections
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bb53T31
0D24073
PN4416;
PN4416A
PN4416
0024D7fl
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Untitled
Abstract: No abstract text available
Text: b S 4 cî ô2 S 0D2433S 272 • M I T I M 5 M MITSUBISHILSIs 5 2 5 7 B P , J - 1 5 , - 1 7 , - 2 0 , - 2 5 ,- 3 5 , - 2 0 L , - 2 5 L , - 3 5 L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static
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0D2433S
262144-BIT
262144-WORD
M5M5257B
M5M5257BP
J-20L
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2 Wavelength Laser Diode
Abstract: 820 nm laser diode multimode COF25B laser diode 780 nm laser diode philips philips potentiometer invisible
Text: 41E D B3 7110a2b 0D241S5 3 PHIN 1 4 1989 AP D E V E L O P M E N T DATA C Q F 2 5 A /D SERIES C Q F 2 5 B /D SERIES C Q F 2 5 C /D SERIES T h s d ata sheet co n tain s advance in fo rm a tio n and sp e cifica tio n s are su b je ct to change w ith o u t n o tice .
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7110a2b
D0241SS
CQF25A/D
CQF25B/D
CQF25C/D
-W-07
CQF25A/D,
711002b
2 Wavelength Laser Diode
820 nm laser diode multimode
COF25B
laser diode 780 nm
laser diode philips
philips potentiometer
invisible
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Untitled
Abstract: No abstract text available
Text: •I bbSa'IBI 0D245T3 TOb APX N AMER PHILIPS/DISCRETE BCW81 b7E ]> J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli cations in thick and thin-film circuits. QUICK REFERENCE DATA
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0D245T3
BCW81
200juA;
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BF660
Abstract: marking IAY
Text: •I tbS3T31 0D24b71 22b H A P X N AMER PHILIPS/DISCRETE BF660 b7E » SILICO N PLANAR T R A N SIST O R P-N-P transistor, in a m icrom iniature plastic envelope; intended fo r use as oscillator in v.h.f. tuners w ith extended frequency range and/or in conjunction w ith M O S - F E T s in thick and thin-film circuits.
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tbS3T31
0D24b71
BF660
OT-23.
April199lj
BF660
marking IAY
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Untitled
Abstract: No abstract text available
Text: bbS3131 0D24AA0 0T0 H A P X Philips Semiconductors NPN 6 GHz wideband transistor £ Product specification BFG93A; BFG93A/X; BFG93A/XR N AUER PHILIPS/DISCRETE b?E » “ PINNING FEATURES PIN • High power gain DESCRIPTION 4 3 BFG93A Fig.1 Code: R8 • Low noise figure
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bbS3131
0D24AA0
BFG93A;
BFG93A/X;
BFG93A/XR
BFG93A
BFG93
OT143
BFG93A/X
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BF547W
Abstract: BF547
Text: Philips Semiconductors • bb5 3T 31 0D24b4fl T43 BIAPX Prelimtnary specification N AUER P H I L I P S / D I S C R E T E b?E D NPN 1 GHz wideband transistor D E S C R IP T IO N BF547W PIN N IN G S ilicon N P N transistor in a plastic S O T 3 2 3 S-mini envelope. It is
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BF547W
OT323
BF547W
BF547.
OT323.
BF547
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code marking 6Cp sot-23
Abstract: marking 6ap BC817-40 marking 6CP BC807 BC808 BC817 BC817-16 BC817-25 BC818
Text: • bbS3T31 0D24M4fc. EDI H A P X N AUER PHIL I P S / D I S C R E T E BC817 BC818 b?E 3> SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package fo r use in d river and o u tp u t stages o f audio a m plifiers in th ic k and th in -film h y b rid circu its.
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0D24M4fc.
BC817
BC818
OT-23
BC807;
BC808;
BC817
OT-23.
35MHz
code marking 6Cp sot-23
marking 6ap
BC817-40
marking 6CP
BC807
BC808
BC817-16
BC817-25
BC818
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TC8802
Abstract: TC8802AF parcor Nippon capacitors
Text: TC8802AF/BF-1 Il 1. m R[]t,724C1 oo24?bs 251 «tosb TOSHIBA UC/UP bl4E D GENERAL The TC8802AF is a single chip PARCOR system voice synthesizing LSI with a 64Kbits mask ROM and a low - pass filter circuit. 2. FEATURES □ PARCOR system 10 kHz sampling voice output.
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TC8802AF/BF-1
TC8802AF
64Kbits
TC8890N/F)
TC8802AF/BF-36
TC8802AF/BF-37
QFP44-P-1414D)
1017am
TC8802AF/BF-38
TC8802
parcor
Nippon capacitors
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TMP68661
Abstract: No abstract text available
Text: TOSHIBA UC/UP S4E D • c]0,ì 7 2 4 Iì G 0 5 4 G 7 5 TO SHIBA Ö24 * T 0 S 3 TM P68661 1. INTRODUCTION - r - is - 3 1 - a n The TMP68661 enhanced program m able communications interface (EPCI) is a universal synchoronous/asynchronous data communications controller chip th at is an
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G054G75
P68661
TMP68661
TMP68000
16-bit
54BSC
24BSC
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USER S MANUAL oki 32 lcd tv
Abstract: USER MANUAL oki 42 lcd tv USER S MANUAL oki 22 lcd tv MSM64155A MSM64P155 QFP100-P-1420-BK USER MANUAL oki 22 lcd tv
Text: O K I Semiconductor MSM64155A/64155AL Built-in M elody C ircu it and L C D D river 4-Bit M icrocontroller GEN ERAL DESCRIPTION The MSM64155A 1.5 V /64155A L (3.0 V) is a 4-bit microcontroller that incorporates an n X -4/ 20 CPU core. The MSM64155A fam ily offers a built-in 256-nibble data m em ory, 4-Kbyte program
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MSM64155A
MSM64155AL
MSM64155A
/64155A
256-nibble
002423b
MSM64155A/64155AL
64155AL
USER S MANUAL oki 32 lcd tv
USER MANUAL oki 42 lcd tv
USER S MANUAL oki 22 lcd tv
MSM64P155
QFP100-P-1420-BK
USER MANUAL oki 22 lcd tv
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