0D17T Search Results

GES5815

Abstract: GES5818 17975 GES5316 GES5616 GES5814 GES5816 GES5817 GES5819
Contextual Info: G □1 E SOLID STATE DE I 3fl7SDfll 0D17T74 3 01E 17974 3875081 G E SOLID STATE D T - ¿ > 7 -2-/ Signal Transistors_ GES5814, GES5815, GES5816 GES5817, GES5818, GES5819 Silicon Transistors Features: • Excellent gain linearity over wide range of collector current: ¿ 5 0 0 mA

2n3905A

Abstract: 2N4125 2N4125 NPN
Contextual Info: G E SOLI» STATE □1 f ' ''' OIE‘“ "17927 3875081 G E SOLÏD'STATE D E | 3 Û 7 S D Û 1 0D17TS7 5 | D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 T •2*5-'? BASE C U RR EN T lB - m A C O LLE C T O R C U R R E N T ( lc ) - m A 92CS-42777 Fig. 9 - Typicalbase-to-emittersaturation voltage characteristics for

D7ZS

Abstract: 2N681 2N681-2N692 2N692 2N689 2N682 2N683 2N684 2N687 2N688
Contextual Info: 6 E SOLI D 3875081 Üi STATE G E SOLID STATE ÖE~| 3ß7SDfll 0D17tt.t 3 01E 17666 Silicon Controlled ¡*3 7* 2N681-2N692 File Number 96 TERMINAL DESIGNATIONS 25-A Silicon Controlled Rectifiers

2N3906

Abstract: 2N4125 42761 2N3905 2N4123 2N4124 2N4126 MCS-4277B zc842t70 2n3905A
Contextual Info: G □1 E SOLI» STATE f 3875081 G E SOLÏD'STATE DE|3Û7SDÛ1 ' ''' OIE’“ "17927 0D17TS7 D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 r - BA SE C U R R E N T l B - m A C O LLE C T O R C U R R E N T ( l c ) - m A 92CS-42777 fig . 9 - Typical basB-lo-emitlersaturalion voltage characteristics lor

Contextual Info: O K I Semiconductor MSM5 14402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : STA TIC COLUM N MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: MITSUBISHI <Dig./Ana. INTERFACE M 51995P.FP SWITCHING REGULATOR CONTROL DESCRIPTION M51995 is the primary switching regulator controller which is especially designed to get the regulated DC voltage from AC power supply. This 1C can directly drive the MOS-FET w ith fast rise and

TA7378P

Abstract: TA8110AP TA7370P ta7378 audio center va 801 amplifier Capacitor 47 JFK ta7767 TA7787AP TA8110AF sumida ift coil
Contextual Info: TOSHIBA-, ELECTRONIC 05 9097247 TOSHIBA. ì Èf| T0ci7247 DD17b3fe. 1 ELECTRONIC 02E 17636 TA7787AP/AF TA8110AP/AF i T- 77- 05-01 AM/FM IF SYSTEM Unit in mm TA7787AP/AF, TA8110AP/AF are the AM/FM IF SYSTEM ICs TA7 7 8 7AP TA8110AP 16 which are designed for Radio Cassette Players and

Contextual Info: Whp% HEW LETT wL/im PACKARD FDDI, 100 Mbps ATM, and Fast Ethernet Transceivers in Low Cost 1x9 Package Style Technical Data Features D escription • Full Com pliance w ith the Optical Perform ance Requirem ents o f the FDDI PMD Standard • Full Com pliance w ith the

Contextual Info: SONY I CXP81840A/81848A CMOS 8-bit Single Chip Microcomputer Description The CXP81840A/81848A is a CMOS 8-bit micro­ computer which consists of A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing pattern generation

2N3392 equivalent

Abstract: 2N3394 2N3394 equivalent 2N3391 2n3393 equivalent 92C3-426C3 2N3391A 2N3393 2N3392 3391A
Contextual Info: G E SOLID STATE 3875081 G E SOLID STATE 0 1 D E Ï 3Û7S0Û1 0017=111 01E 17911 D r- W ' t l Transistors 2N3390-94,2N3391A Silicon Transistors TO-98 The 6E/RCA 2N3390-94, 2N3391A are planar, passivated

CSP1084

Abstract: at&t dsp1610 RXQ1 rxq2 005D IS-54 1251 30 34B
Contextual Info: AT&T K ' Ï Ï Ï Ï * ° ata Sh6et Microelectronics CSP1084 Baseband Radio Interface for IS-54 Dual-Mode Cellular Telephone Applications Features Receive path — Decimation and postfiltering to 10 bits — Programmable gain amplifier with 0 dB to 18 dB gain in 2 dB steps

LC6502

Abstract: LC6505C CSB400P LC6502B LC6500 2716 TI eprom LC6599 LC65PG99 KBR-400B eprom 2532
Contextual Info: No. 1247 LC65PG99 I I CHIP FOR EVALUATING C MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LC6500 SERIES S AN VO 1. General Description The LC65PG99 is a simulation chip intended for use in evaluating C MOS 4-bit single-chip microcomputer LC6500 series. With a 24-pin socket for program EPROM provided on the package surface, it is designed to facilitate the develop­

transistor SMD 41t

Abstract: smd transistor marking 9J qml-38535 4069UB smd transistor 9j transistor SMD 12E 4069UBN
Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PM IC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A 1 2 3

Contextual Info: ADVANCE 256K j512Kx64 MICRON I SGRAM SODIMMs TECHNOLOGY, INC. SYNCHRONOUS GRAPHICS RAM DIMM FEATURES PIN ASSIGNMENT (Front View) • 144-pin, small-outline, dual in-line memory module (DIMM) • 2MB (256K x 64) and 4MB (512K x 64) • Fully synchronous; all signals registered on positive

Contextual Info: W O Optical disc ICs o w 4-channel BTL driver for CD players B A 6 1 9 8 S / B A C o Q. o 6 1 9 8 F P T h e B A 6198 and B A 6198FP are ICs with an internal 4 -ch ann el BTL pow er driver for C D players, a 5 V regulator (re­ quires attached PNP transistor , standard operational amplifier, and reset output pin. All driver channels have a gain

2N2926

Abstract: 2N 2926
Contextual Info: G E SOLID STATE 3875081 01 G E S O L ID DE 3Ö7SDÖ1 aD17cJ0ci 3 | ~ STA TE 01E 17909 D Signal Transistors 2N2£26 7 2, ? ~ / î t ' Silicon Transistors TO-98 The G E / R C A 2N 2926 is a planar passivated N P N silicon tran­ sistor intended for genera purpose applications. The planar

2N4400

Abstract: 2N4401 2N4402 2N4403 X10-4
Contextual Info: •g~lf“S Ô L λ S T A T E Öl 387508t G E SOLID STATE DÛT! 3Ö750Ö1 □ 0 1 7 c335 T J ~ 01E 17932 D Signal T ra n sisto rs- 2N4400, 2N4401, 2N4402, 2N4403

42-PIN

Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
Contextual Info: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.