0D07 Search Results

2SC503

Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.

2SD683A

Abstract: 2SD683
Contextual Info: TOSHIBA íDISCRETE/OPTO} 9097250 TOSHIBA Tb CD IS C R E T E / OPT O dT I t OITESO 0D077SD ^ 2SD683 .2SD683A, SILICON NPN TR IP LE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in mm HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS.

A04A ic

Abstract: FE600 600V NPN 2A 2sd684a D1.5B IGNITER
Contextual Info: ~5b TOSHIBA {DISCRETE/OPTO} Î Ë 1 SOTTESO 0D077S3 4 : 56C 077 S’3 9097250 TOSHIBA DISCRETE/OPTO 0r T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ (DARLINGTON POWER) INDUSTRIAL A P P L I C A T I ^ in IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.

AN7213

Abstract: AN7213S bt35f AN721 ELQ-5N53 EIF-7S752A
Contextual Info: PANASONIC INDL/ELEK ÍIC} 75 6932852 D E | bT35ñSS 0D07ti52 4 PANASONIC IN DL ,E L EC T RO NI C DT~V-C>5-fó 72C 0 7 6 5 2 t ^ 7 f, X —T'-l'.Xm IC AN7213, AN7213S AN721 3, AN721 3S FM • n 7 U > |> I > K IU S & // F M F ro n t End C ir c u its fo r R a d io s

Contextual Info: 4 8 55452 05 IN T E R N A T IO N A L R E C T I F I E R I«R dF I 4ÛSSMS5 0D077B3 fl I Data Sheet No. PD-3.088 IN TER N A TIO N A L R E C T IFIER T-25-19 S23A & S23AH SERIES 400-200 VOLTS RANGE 660 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs

Contextual Info: bDE D <^70570 0D07T05 • Dlfi I IZETB ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: bDE D • T c]7G57fl 0d07flQcl ZETEX N-channel enhancement­ mode vertical DMOS FET SEMICONDUCTORS ZV N 05 45 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance •

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

Contextual Info: PANASONIC INDL/ELEK {IC> 72 6 9 3 2 8 6 2 L S T T L P A N A S O N IC D e J ^ 3 2 0 5 2 0D0724Ö fl [j*' IN D t:;E L E C T R O N l £ ^ ^ ^ ;7 ^ C ^ 7 2 4 8 y D N 7 4 L S i^ U — X O ^ ^ , D N 74LS3 7 4 /D N 7 4 LS3 7 4 S T - 4 I0 - 0 7 - 0 S DN74LS374/DN74LS374S

LT336

Abstract: 6AL7 LT3360 LT3360P
Contextual Info: High Resolution LED Arrays SHARP CORP LT3360P SIE J> • LT3360P 01007^0 0D075CH 4=13 « S R P J 51 -Dot High Resolution LED Array ■ Model No. LT3360P Red GaP I Features 1. 2. 3. 4. 51-dot a r r a y Dynamic drive type Prismatic lens Bar-like radiation, 5mm in width

2SC2483

Abstract: 2SA1195
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sh ¿6C <DIS CR ET E/ OP T O 2SC2483 D E ^ TQT7ESD 0D07S41 □ 07 5^ L D yr. S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) Unit in mm HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. 9.9MAX. . gfg.gfeqg COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.

Contextual Info: IO R Data Sheet No. PD-3.115 INTERNATIONAL R E C T IF IE R OE 4855452 IN TERN ATIO N AL R E C T I F I E R o DE I 4ÖSS4S5 0D07Ö1? 3 |~ 02E 07817 S77R SERIES 2000-1400 VOLTS RANGE 4800 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs VOLTAGE RATINGS

V201 telefunken

Abstract: IR-Diode TCSS1110 A-04 TCSS111 TCSS4110 CLS20
Contextual Info: •=}&]> D TELEFUNKEN ELECTRONIC T T H U ilF ty JN lK iM ■ ÔTSOCHb 0D07Ô33 5 ■ ALGG TCSS l it . up to TCSS 421. electronic CfMtiv« Technologies T ^ - 7 3 Optoelectronic Interrupter with Schmitt-Trigger Output Logic

BTB19-700B

Abstract: BTB19-400B BTB19-600B BTB19-200B
Contextual Info: S G S-THOMSON 7flC 7T5T237 0D07fl‘ 4 f ' Ü ïl i. BTB 19 B UNINSULATECTmiACS TRIACS N O N ISOLÉS 7 -SS'-zS' I TR M S = 20 A /T c = 75°C N ew range suited fo r applications such as phase co n tro l and sta tic sw itchin g . — (ilass passivated chip.

B1115

Abstract: mt4c4001 MT4C4001JDJ-6 4c4001 MT4C4001J JCSR
Contextual Info: MICRON SEMICONDUCTOR INC b3E D • b l l l S 4 cì 0D07b2tì 4D2 BURN MT4C4001 J L 1 MEG X 4 DRAM M IC R O N DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L)

R8050

Abstract: ZD 103 ZD 103 ma r8050d
Contextual Info: BROOKTREE C O RP b3 E D • IbiiSS^S 0D073b4 OflO « B R K R8050 T-1 PCM Devices R8050 T-1 SERIAL TRANSMITTER DESCRIPTION The Rockwell T-1 Serial Transmitter formats data to be serially transmitted according to T-1 D2 or T-1 D3 specifi­ cations, inserting framing and signalling bits along with 24

2SC2379

Abstract: 453 opto 10ID
Contextual Info: ~Sh TOSHIBA {DISCRETE/OPTO} DE I ^ O T T S S D 0D07S2a 7 J 9097250 TOSHIBA D I S C R E T E /O P T O > SIL IC O N NPN E P IT A X IA L P LA N A R TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P 0 = 6 W(Min. (f=470MHz, VCC=12.6V, Pi=lW)

gapy

Contextual Info: • T flS fi'm -f S L 0D07T05 Mfll ■ R H f l K /L ig h t Emitting Diodes R - 5 2 SLR-520 Series s .« » , • i'Wfé'Tsilll/Dimensions Unit : mm SLR-520 v >J - X l i , GaP t ffl t m m g 5 > 7 T T o & IC 3.0mm f -y ^ T fS ffl 7 # 3 v t - 'S C & 'o T i 'i- f o

Contextual Info: YoSHÎBÂTCDÎSCRETE/0PT0ï 9097250 TOSHIBA » F | ci m ? E S D <DISCRETE/OPTO ' 5 6 C 07 7T 5 0D0773S " 0 yC 5 3 3-/3 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm HIGH POWER AMPLIFIER APPLICATIONS.

Contextual Info: St 'TOSHIBA {DISCRETE/OPTO} DËTJ B O T O S O 0D077G3 J 9097250 TOSHIBA DISCRETE/OPTO 5òTTin70 3 •o' r - 3 ’i w / SILICON NPN EPITAXIA L TYPE (PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX 03,6±d2 FEATURES: . Low Collector Saturation Voltage

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE J 1 0 T 7 2 S 0 0D07S0Ö 2 CD IS C R E TE /O PT O SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) Unit in mm TV HORIZONTAL DEFLECT I ON OUTPUT APPLI CAT IONS. 1Q3MAX. 0 3 .6 x 0 .8 FEATURES: . Large Collector Current Capability.

Contextual Info: ~5Í TOSHIBA {DISCRETE/OPTO} DE I ^ O T T E S O 0D07S34 3~|~~ y 9097250 TOSHIBA <DISCRETE/OPTO S IL IC O N N P N T R IP L E D IF F U SE D M E S A TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HIGH FREQUENCY INVERTER APPLICATIONS.

S52K16A

Abstract: S52K12B S52K
Contextual Info: OH D E l 4 f l S S 4 S E 0D07fl01 0 | «-»_*_ c h a a l Mr» P R 'I 111 IN TER N A TIO N A L R E C T IFIER IÖ R 4855452 IN T E R N A T IO N A L R EC TIFIER D a ta S h e e t N O . P D 02E 07801 D 7 "^ O .lll A S -J if S52K SERIES 1600-1000 VOLTS RANGE 2340 AMP RMS, RING AMPLIFYING GATE

2SC2105

Abstract: 5mmX15mm 10ID
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O SH IB A Tb D E J TOTVSSO 0D07Mfth 7 <D I S C R E T E / O P T O > SIL IC O N NPN E P IT A X IA L P L A N A R TYPE Unit in nan UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=6W Min. (f=470MHz, VCc=12.6V, Pi=lW)