ZVP1320 Search Results

Contextual Info: bDE D <^70570 0D07T05 • Dlfi I IZETB ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: ZVP1320A Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)200Í I(D) Max. (A)70m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)800m Minimum Operating Temp (øC)

ZVP1320F

Abstract: DSA0037401
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * VDS - 200V ZVP1320F ✪ S D PARTMARKING DETAIL - MT G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -200 V Continuous Drain Current at Tamb=25°C

plessey

Contextual Info: 7p l e s s e y s e m i c o n d /d i s c r e t e 03 P-channel enhancement mode vertical DMOS FET D E | 722aS33 0G0L,7t>D 7 ZVP1320F ABSOLUTE MAXIMUM RATINGS Parameter SOT-23 Unit -2 0 0 V -0 .0 3 5 A Drain-sourco voltage VDs Continuous drain current let TA = 25°C

s33 sot23

Abstract: 05773
Contextual Info: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY ^ 5 S E M I C O N D /DI S C R E T E P-channel enhancement mode vertical DMOS FET d F |7 E E 0 S 3 3 95D ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

all diodes ratings

Abstract: ZVP1320F marking mt ZVP1320FTA DIODES Inc diodes marking SOT23 component marking code mt FET marking Mt DIODES incorporated
Contextual Info: A Product Line of Diodes Incorporated ZVP1320F 200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • V BR DSS > -200V RDS(on) ≤ 80Ω @ VGS = -10V Maximum continuous drain current ID = -35mA

zvp1320

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 3 - JANUARY 1996 ZVP1320F Q £ FEATURES * V d s -2 0 0 V PARTMARKING DETAIL - MT ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L VALU E U N IT -200 V -35 mA -400 mA D ra in -S o u rc e V o lta ge

Contextual Info: A Product Line of Diodes Incorporated ZVP1320F 200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • V BR DSS > -200V RDS(on) ≤ 80Ω @ VGS = -10V Maximum continuous drain current ID = -35mA

Contextual Info: ZVP1320F Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)35m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)330m Minimum Operating Temp (øC)-55

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ZVP1320F ISSUE 3 - JANUARY 1996 FEATURES * Vd s -200V O_ _ _ PARTMARKING DETAIL - MT ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V DS

Contextual Info: ZVP1320B Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)200Í I(D) Max. (A)100m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)

P-Channel FET 100v to92

Abstract: to92 fet p channel ZVP1320A DSA003787
Contextual Info: ZVP1320A TYPICAL CHARACTERISTICS VGS= -20V -10V -9V -8V ID - Drain Current mA -240 -200 -160 -7V -160 -120 -6V -80 -5V -40 -4V -120 -100 -4 -8 -12 -16 -20 -24 -28 -32 -36 -20 -4V VDS - Drain Source Voltage (Volts) -2 -4 -6 -8 -10 VDS - Drain Source Voltage (Volts)

ds160

Abstract: DS200
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 200 V o lt V DS * R o s ie r ^ ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage VDS VALUE UNIT -200 V Continuous Drain Current a tT amtj=25°C *D

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

L50Q

Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
Contextual Info: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50

B558

Abstract: B55123 BSS84A ZVN3310F ZVN4206E BSS66 BSS67 BSS79B BSS79C FMMT2222
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

Contextual Info: SELECTION TABLES TABLE 2: P CHANNEL SM A LL SIGNAL M OSFETS Part B ^ dss *0 IpM / V mA A RpSlonl lD V GS Max. mA V w ^G SIth l number Min. at Ip Ü Max. mA at Pp Package ZVP0545A -4 5 0 -4 5 -0 .4 -1 .5 -4 .5 -1 150 -5 0 -1 0 0.7 E-line ZVP0545B -4 5 0 -1 0 0

ZVN3320F

Abstract: ZVN3320
Contextual Info: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360