09N03
Abstract: PJ09N03D 09n03d
Text: 09N03D 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=16mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers
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Original
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PJ09N03D
2002/95/EC
O-252
MIL-STD-750
09N03D
250uA
09N03
PJ09N03D
09n03d
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PDF
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09N03
Abstract: 09n03d PJ09N03D
Text: 09N03D 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=16mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers
|
Original
|
PJ09N03D
O-252
MIL-STD-750D
09N03D
09N03
09n03d
PJ09N03D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 09N03D 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=16mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers
|
Original
|
PJ09N03D
2002/95/EC
O-252
MIL-STD-750
09N03D
250uA
|
PDF
|