09FEB2006 Search Results

Contextual Info: TH I S DRAW I NG IS UNPUBLI S H E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS LOC D I ST REV I S IONS RESERVED. D E S C R I P T I ON c BARE BOOT DATE REVISE PER ECR-06-00318 09FEB2006 REVISE PER ECR- 0 6 - 0 2I 45

Contextual Info: TH I S DR AW I NG IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION RIGHTS LOC REV IS IONS D I ST RESERVED. D E S C R I P T I ON DATE R E V I S E PER E C R - 0 6 - 0 0 3 1 8 ADD NOT E 3 DWN 09FEB2006 06MAR09

Contextual Info: 2STR2215 Low voltage fast-switching PNP power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits s ct 3

2STR1215

Abstract: 2STR2215 JESD97
Contextual Info: 2STR1215 Low voltage fast-switching NPN power transistor General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits ■

63 ball Vfbga thermal resistance

Contextual Info: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached

D-PAK

Abstract: P270N04 STB270N04-1 STP270N04 B270N04 JESD97 STB270N04
Contextual Info: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N04-1 40V <2.9mΩ 120A 330W STB270N04 40V <2.5mΩ 160A 330W STP270N04 40V <2.9mΩ 120A 330W

Contextual Info: ST72682 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI

D4NK5

Abstract: P4NK50ZD D4NK50ZD-1 d4nk50zd F4NK50ZD F 25.1 A zener diode D4NK P4NK50Z D4NK50Z *D4NK5
Contextual Info: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-CHANNEL 500V - 2.4Ω - 3A - TO-220 /FP- DPAK - IPAK Fast Diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W STF4NK50ZD

Contextual Info: ST72682 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI

D4NK5

Abstract: P4NK50Z
Contextual Info: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W

marking code stmicroelectronics SOT-23

Abstract: 2STR1215 2STR2215 HIGH SPEED SWITCHING NPN SOT23
Contextual Info: 2STR1215 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits 3 2 1 Applications

Contextual Info: 4 T H 1S DRAW 1NG C 3 I S U N P U B L 1S H E D . C O P Y R 1GHT 20 RE L E A S E D BY TYCO E L E C T R O N I C S FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS 2 20 LOC REVISIONS D I ST R E SE RV ED. P LTR D E S C R 1P T 1ON B REVISE B PVC S H OR T CR I MR

EMIF02-mic01f2

Abstract: Date Code Marking STMicroelectronics STMicroelectronics marking code date AN1235 JESD97 microphone Preamp schematic
Contextual Info: EMIF02-MIC01F2 IPAD 2 LINE EMI FILTER INCLUDING ESD PROTECTION MAIN APPLICATION • Mobile phones Differential microphone filtering and ESD protection DESCRIPTION The EMIF02-MIC01F2 is a highly integrated device designed to suppress EMI / RFI noise for

F8NK85Z

Abstract: P8NK85Z p8nk8 JESD97 STF8NK85Z STP8NK85Z
Contextual Info: STP8NK85Z STF8NK85Z N-channel 850V - 1.1Ω - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID ) s ( t c u d o ) r s ( P t c e t u e d l o o r s Description P b e OInternaleschematic diagram

Contextual Info: TH 1S DRAW 1NG IS UNPUBL 1SHED. A COPYR1GHT 20 RELEASED FOR PUBLICATION BY TYCO ELECTRON ICS CORPORATION 20 LOC ALL RIGHTS RESERVED. DF REVISIONS D I ST A5 P LTR DESCR1P T 1ON B C D DATE R E V PE R E C R - 0 5 - 1 8 2 7 7 R E V I S E D PE R E C R - 0 6 - 3 2 2 8

VIPER22ADIP-E

Abstract: vip*22a
Contextual Info: VIPer22A-E VIPer22ADIP-E, VIPer22AS-E Low power OFF-line SMPS primary switcher Features • Fixed 60 kHz switching frequency ■ 9 V to 38 V wide range VDD voltage ■ Current mode control ■ Auxiliary undervoltage lockout with hysteresis ■ High voltage start-up current source

BGA149

Abstract: TFBGA149 BGA107
Contextual Info: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR

EMIF02-mic01f2

Abstract: AN1235 JESD97
Contextual Info: EMIF02-MIC01F2 2-line IPAD , EMI filter including ESD protection Features • 2-line symetrical low-pass filter ■ Lead-free package ■ High-density capacitor ■ High-efficiency EMI filtering ■ Very small PCB footprint: 1.42 mm x 1.92 mm ■ Very thin package: 0.65 mm

2STR1215

Abstract: 2STR2215 JESD97
Contextual Info: 2STR1215 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Applications

Panasonic EEFCDJ470R

Abstract: AN2206 L6920DB EEFCDJ470R L6920D ELL6RH100M SD10 SD12 ELL6RH Voltage Supervisory automotive ST
Contextual Info: AN2206 Application note Designing with L6920DB, high efficiency syncronous rectifier step-up converter Introduction The L6920DB is a high efficiency monolithic step-up switching converter IC especially designed for battery powered applications, thanks to its minimum start-up of 0.8 V, and a

F8NK85Z

Abstract: STP8NK85Z JESD97 STF8NK85Z P8NK85Z
Contextual Info: STP8NK85Z STF8NK85Z N-channel 850V - 1.1Ω - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESH Power MOSFET General features VDSS @Tjmax Type RDS(on) ID STP8NK85Z 850 V < 1.4 Ω 6.7 A STF8NK85Z 850 V < 1.4 Ω 6.7 A • Extremely high dv/dt capability

mic preamp

Contextual Info: EMIF02-MIC01F2 2-line IPAD , EMI filter including ESD protection Features • 2-line symetrical low-pass filter ■ Lead-free package ■ High-density capacitor ■ High-efficiency EMI filtering ■ Very small PCB footprint: 1.42 mm x 1.92 mm ■ Very thin package: 0.65 mm

AN1235

Abstract: EMIF02-MIC01F2
Contextual Info: EMIF02-MIC01F2 2-line IPAD , EMI filter including ESD protection Features • 2-line symetrical low-pass filter ■ Lead-free package ■ High-density capacitor ■ High-efficiency EMI filtering ■ Very small PCB footprint: 1.42 mm x 1.92 mm ■ Very thin package: 0.65 mm

TFBGA137

Abstract: BGA137 BGA bga 10x13 MCP NAND DDR NAND FLASH BGA zc 409 NAND512-M NAND01G-M NAND256-M NAND256R3M0
Contextual Info: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM