09FEB200 Search Results

Contextual Info: TH I S DRAW I NG IS UNPUBLI S H E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS LOC D I ST REV I S IONS RESERVED. D E S C R I P T I ON c BARE BOOT DATE REVISE PER ECR-06-00318 09FEB2006 REVISE PER ECR- 0 6 - 0 2I 45

100J

Abstract: 102387-1 102387-9 1-102387-0
Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - DIST LOC ALL RIGHTS RESERVED. R E VIS IO N S 39 AD LTR DESCRIPTION R2 POSN #1 ECO—0 7 —0 0 2 8 6 6 DATE DWN APVD 09FEB2007 RB DR IN D D 6. C .285

Contextual Info: TH I S DR AW I NG IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION RIGHTS LOC REV IS IONS D I ST RESERVED. D E S C R I P T I ON DATE R E V I S E PER E C R - 0 6 - 0 0 3 1 8 ADD NOT E 3 DWN 09FEB2006 06MAR09

transistor marking YD 317

Abstract: STM6719TW 7sf3 STM6719SFB Marking STMicroelectronics year digit Z STM6720SV marking sj STM6777TW 7TG3 sot23-6 marking yj
Contextual Info: STM6717/6718/6719/6720 STM6777/6778/6779/6780 Dual/triple ultra-low voltage supervisors with push-button reset with delay option Features • Primary supply (VCC1) monitor. Fixed (factory-programmed) reset thresholds: 4.63 V to 1.58 V ■ Secondary supply (VCC2) monitor

Contextual Info: VN820-E High-side driver Datasheet − production data Features Type RDS on VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E IOUT 10 VCC 1 PowerSO-10 40 mΩ 9A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC

Contextual Info: 2STR2215 Low voltage fast-switching PNP power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits s ct 3

2STR1215

Abstract: 2STR2215 JESD97
Contextual Info: 2STR1215 Low voltage fast-switching NPN power transistor General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits ■

Contextual Info: STM6717/6718/6719/6720 STM6777/6778/6779/6780 Dual/triple ultra-low voltage supervisors with push-button reset with delay option Features • Primary supply (VCC1) monitor. Fixed (factoryprogrammed) reset thresholds: 4.63V to 1.58V ■ Secondary supply (VCC2) monitor

63 ball Vfbga thermal resistance

Contextual Info: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached

A1 RMF

Abstract: STCF02 NCP18WF104J03RB high power white led driver circuit diagram C1608X5R0J106MT JESD97 QFN20 STCF02PNR torch height controller capacitor 820 uF 25V
Contextual Info: STCF02 High power white led driver General features • Buck-boost DC/DC Converter ■ Drives one power white led: up to 600mA between 2.7 to 4.5V ■ Led temperature protection ■ Output current control ■ 1.8 MHz typ fixed frequency PWM Description ■

12v 100w AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: 2STW1695 2STW4468 JESD97 70w amplifier
Contextual Info: 2STW1695 High power PNP epitaxial planar bipolar transistor General features • High breakdown voltage VCEO = -140V ■ Complementary to 2STW4468 ■ Typical ft =20MHz ■ Fully characterized at 125 oC ■ In compliance with the 2002/93/EC European Directive

15KV

Abstract: ST207E ST207ECDR ST207ECPR TSSOP24
Contextual Info: ST207E ± 15kV ESD protected 5V RS-232 transceiver Feature summary • ESD protection for RS-232 i/o pins: ±15 kV human body model ■ 230kbps data rate ■ Guaranteed slew rate 3V/ms min ■ Operates from a single 5V power supply ■ Packaged in SO-24, SSO-24 and TSSOP24

D-PAK

Abstract: P270N04 STB270N04-1 STP270N04 B270N04 JESD97 STB270N04
Contextual Info: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N04-1 40V <2.9mΩ 120A 330W STB270N04 40V <2.5mΩ 160A 330W STP270N04 40V <2.9mΩ 120A 330W

2N3019A

Abstract: 2N3019HR 15384 st marking code
Contextual Info: 2N3019HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

serial flash M25P10

Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)

Contextual Info: D O ETRI E N EI" DIMENSIONS IN nn THI RD ANGLE P R DJ E CT ID N F NDTES B" REF C O N N EC T O R IS FD R REQUIREMENTS CABLE DESIGNED FD R FLAT SEE RIBBON CABLE APPLICATIO N I N D I C A T I O N OF F I R S T C A B L E P O S I T I O N C O N T A C T P O S I T I O N . B L A C K IN K MARKS

D4NK5

Abstract: P4NK50ZD D4NK50ZD-1 d4nk50zd F4NK50ZD F 25.1 A zener diode D4NK P4NK50Z D4NK50Z *D4NK5
Contextual Info: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-CHANNEL 500V - 2.4Ω - 3A - TO-220 /FP- DPAK - IPAK Fast Diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W STF4NK50ZD

Contextual Info: ST72682 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI

Contextual Info: THI S DRAWI NG IS UNPUBL I SHED. RELEASED FOR PUBLI CATI ON ALL COPYRI GHT 20 RI GHTS LOC DI ST R E V I S IONS RESERVED. DE S C R I P T I O N REVISED B3 MATER \S ^ Ä /— 2 — \S ^ Ä / 85 •0 0 4 8 2 0 I I MAR201 I RK 94BRONZE POR RECOGN 3 ECO- F PA 35±0 .15

D4NK5

Abstract: P4NK50Z
Contextual Info: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W

60N55F3

Contextual Info: STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ

Contextual Info: TH I S DRAW ING IS UNPUBLI S H E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS FOR CORPORATION. ALL PUBLICATION RIGHTS LOC D I ST REV I S IONS RESERVED. D E S C R I P T I ON DATE P R E L I M I NARY REVISED . 50 -= \ 1 : 11 — - - 2 . : ECO- >-009237

M45PE16

Contextual Info: M45PE16 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Preliminary Data Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 16 Mbit of Page-Erasable Flash memory

M25P05

Abstract: ST10
Contextual Info: M25P05 512 Kbit, Low Voltage, Serial Paged Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Paged Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■