Untitled
Abstract: No abstract text available
Text: 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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MT45W256KW16BEGB
16-word
09005aef8329f3e3
09005aef82e419a5
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages
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Original
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MT45W256KW16BEGB
16-word
09005aef8329f3e3/Source:
09005aef82e419a5
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PDF
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