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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive	Original	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752	PDF
MT48H32M16LF Abstract: 32M16 MT48H16M32 Contextual Info: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1	Original	512Mb: MT48H32M16LF MT48H16M32LF/LG 54-ball 90-ball IDD2/IDD71 09005aef82ea3742 MT48H32M16LF 32M16 MT48H16M32	PDF
SMD 5 PIN CODE G7 Abstract: smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9 Contextual Info: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock	Original	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752 SMD 5 PIN CODE G7 smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9	PDF
Contextual Info: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1	Original	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742	PDF
Contextual Info: Advance‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock	Original	128Mb: MT48H8M16LF MT48H4M32LF 09005aef82ea3742/Source: 09005aef82ea3752	PDF
Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive	Original	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752	PDF
MT48H32M16LF Abstract: 512MB SDR SDRAM CHIP Contextual Info: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1	Original	512Mb: MT48H32M16LF MT48H16M32LF/LG 54-ball 90-ball IDD2/IDD71 09005aef82ea3742 MT48H32M16LF 512MB SDR SDRAM CHIP	PDF