08MAY06 Search Results

Si6983DQ

Contextual Info: Si6983DQ Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V - 5.4 0.030 at VGS = - 2.5 V - 4.8 0.042 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET Pb-free - 20 APPLICATIONS

Si4621DY-T1-E3

Abstract: si4621 S6078 Schottky Diode 20V 5A
Contextual Info: Si4621DY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V 6.2 0.094 at VGS = - 4.5 V 4.7 Qg (Typ) 4.5 nC • LITTLE FOOT Plus Schottky RoHS APPLICATIONS

Si5483DU-T1-E3

Abstract: si5483
Contextual Info: Si5483DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.043 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area

74613

Abstract: 62472 AN609 Si4724CY 147665
Contextual Info: Si4724CY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI7812DN

Contextual Info: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm

DS75

Abstract: STDS75 STLM75
Contextual Info: STDS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±0.5°C (typ) accuracy – ±2°C (max) accuracy from –25°C to +100°C ■ Low operating current: 125 µA (typ)

Contextual Info: STDS75 Digital temperature sensor and thermal watchdog Datasheet − production data Features • Measures temperatures from –55 °C to +125 °C –67 °F to +257 °F – ±0.5 °C (typ) accuracy – ±2 °C (max) accuracy from –25 °C to +100 °C ■

Contextual Info: WSZ Vishay Wirewound Resistors, Surface Mount, Silicone or Cement Coated, High Power FEATURES • Low cost, high power up to 4 W Pb-free • All welded construction Available • Ideal for pulsing application e3 • Ceramic core RoHS* • Available on tape and reel

si4456

Abstract: TB-17 Si4456DY Si4456DY-T1-E3
Contextual Info: Si4456DY Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A)a 0.0038 at VGS = 10 V 33 0.0045 at VGS = 4.5 V 31 Qg (Typ) 37.5 nC • TrenchFET Gen II Power MOSFET • 100 % Rg and UIS Tested RoHS

DPDT 6 terminal switch internal diagram

Abstract: HP4192A J-STD-020B 16-bump
Contextual Info: DG3015 Vishay Siliconix New Product Low-Voltage, Low rON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG3015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low

Si4904DY-T1-E3

Abstract: S-6077
Contextual Info: Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • UIS Tested PRODUCT SUMMARY VDS V 40 rDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 Qg (Typ) 5.6 RoHS COMPLIANT APPLICATIONS

Si4441EDY

Abstract: Si4441EDY-T1
Contextual Info: Si4441EDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.016 at VGS = - 10 V - 10.6 0.026 at VGS = - 4.5 V - 8.3 • TrenchFET Power MOSFET • ESD Protected: 2500 V Pb-free Available

Si7864ADP

Abstract: Si7864ADP-T1-E3
Contextual Info: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)

Si4386DY

Abstract: SI4386DY-T1-E3
Contextual Info: Si4386DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 16 0.0095 at VGS = 4.5 V 13.5 Qg (Typ) 11 • TrenchFET Gen II Power MOSFETS • PWM Optimized • 100 % Rg Tested

Contextual Info: Si4441EDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.016 at VGS = - 10 V - 10.6 0.026 at VGS = - 4.5 V - 8.3 • TrenchFET Power MOSFET • ESD Protected: 2500 V Pb-free Available

transistor c900

Abstract: DS75 STDS75 STLM75
Contextual Info: STDS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C Accuracy from –25°C to +100°C (max) ■ Low operating current: 125µA (typ) ■ No external components required

CTLB058834-005

Abstract: CTLB058834-006 CTLB058834-009 CTLB058834-014 CTLB058834016 CTLB058834-017 CTLB058834-019 1877160
Contextual Info: 501-664 Qualification Test Report 01Nov07 Rev A Metal Shell Micro Circular Connector System 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Metal Shell Micro Circular Connector System threaded version to determine its conformance to the requirements of Product Specification 108-2169 Revision

Contextual Info: Si4456DY Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A)a 0.0038 at VGS = 10 V 33 0.0045 at VGS = 4.5 V 31 Qg (Typ) 37.5 nC • TrenchFET Gen II Power MOSFET • 100 % Rg and UIS Tested RoHS

THERMOSTAT SCHEMATIC

Abstract: DS75 thermometer serial ds75 STDS75 STLM75
Contextual Info: STDS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55 °C to +125 °C –67 °F to +257 °F – ±0.5 °C (typ) accuracy – ±2 °C (max) accuracy from –25 °C to +100 °C ■ Low operating current: 125 µA (typ)

Si7806BDN

Abstract: Si7806BDN-T1-E3
Contextual Info: Si7806BDN Vishay Siliconix New Product N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 12.6 0.0205 at VGS = 4.5 V 10.6 • TrenchFET Power MOSFETS • PWM Optimized • New Low Thermal Resistance PowerPAK®

SUD19N20-90-E3

Abstract: SUD19N20-90
Contextual Info: SUD19N20-90 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.090 at VGS = 10 V 19 0.105 at VGS = 6 V 17.5 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested

88550

Abstract: BYS459F-1500 JESD22-B102D J-STD-002B BYS459-1500 BYS459B-1500 BYS459B-1500E3
Contextual Info: BYS459-1500, BYS459F-1500 & BYS459B-1500 Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • Fast reverse recovery time • Low switching loss, high efficiency • Low forward voltage drop

Contextual Info: Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • UIS Tested PRODUCT SUMMARY VDS V 40 rDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 Qg (Typ) 5.6 RoHS COMPLIANT APPLICATIONS

DS75

Abstract: STDS75 STLM75 thermometer serial ds75
Contextual Info: STDS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C accuracy from –25°C to +100°C (max) ■ Low operating current: 125 µA (typ) ■ No external components required