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    08F2060

    Abstract: No abstract text available
    Text: Key Parameters V DRM ^TAVM s 2000 V = 1200 A = *q *TSM '/ t o 5STF 08F2060 60 ps = 15000 A = 1.25 V = Fast Switching Thyristor 0.430 itiq Doc. No. 5SYA 1045-01 Apr.97 Features • Patented free-floating silico n technology • Designed for traction and industrial applications


    OCR Scan     		PDF 08F2060 08F2060 08F1860 08F1460 CH-5600