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Infineon Technologies AG IPB080N06N-G MOSFET N-CH 60V 80A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB080N06N-G	Reel			1,000	1 - 10 - 100 - 1000 $0.95968 10000 $0.95968	Buy Now
	IPB080N06N-G	Cut Tape			1	1 $1.18 10 $1.18 100 $1.18 1000 $1.18 10000 $1.18	Buy Now
	IPB080N06N-G	Digi-Reel			1	1 $1.18 10 $1.18 100 $1.18 1000 $1.18 10000 $1.18	Buy Now
Infineon Technologies AG IPP080N06N-G MOSFET N-CH 60V 80A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP080N06N-G	Tube			500	1 - 10 - 100 - 1000 $1.00312 10000 $1.00312	Buy Now

080N06N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IEC61249-2-21 Abstract: PG-TO220-3 080N06N Text: 080N06N G OptiMOS Power-Transistor 080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature	Original	PDF	IPB080N06N IPP080N06N IEC61249-2-21 P-TO263-3-2 P-TO220-3-1 080N06N IEC61249-2-21 PG-TO220-3 080N06N
080N06N Abstract: d80 DIODE PG-TO220-3 Text: 080N06N G OptiMOS Power-Transistor 080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 m: 80 A • 175 °C operating temperature • Avalanche rated	Original	PDF	IPB080N06N IPP080N06N PG-TO263-3 PG-TO220-3 080N06N 080N06N d80 DIODE PG-TO220-3
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	PDF	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
PG-TO220-3 Abstract: IPP080N06N d80 DIODE 65V8 Text: 080N06N G OptiMOS Power-Transistor 080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature	Original	PDF	IPB080N06N IPP080N06N P-TO263-3-2 P-TO220-3-1 080N06N PG-TO220-3 d80 DIODE 65V8
Untitled Abstract: No abstract text available Text: 080N06N G OptiMOS Power-Transistor 080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature	Original	PDF	IPB080N06N IPP080N06N P-TO263-3-2 080N06N P-TO220-3-1