0805TYPE Search Results

RKD701KN

Contextual Info: RKD701KN Silicon Schottky Barrier Diode for High Speed Switching REJ03G1471-0100 Rev.1.00 Sep 27, 2006 Features • Low reverse current, Low capacitance. • A free halogen has corresponded. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and

Contextual Info: RKD701KN Silicon Schottky Barrier Diode for High Speed Switching REJ03G1471-0100 Rev.1.00 Sep 27, 2006 Features • Low reverse current, Low capacitance. • A free halogen has corresponded. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and

RKD750KN

Abstract: DSA001020
Contextual Info: RKD750KN Silicon Schottky Barrier Diode for Detector REJ03G1359-0100 Rev.1.00 May 15, 2006 Features • Low forward voltage, Low capacitance and High detection sensitivity. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and

Contextual Info: RKV600KN Variable Capacitance Diode for VCO REJ03G1305-0100 Rev.1.00 Nov 21, 2005 Features • High capacitance ratio. n = 2.35 min • Low series resistance. (rs = 0.60 Ω max) • Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and

smd p-98

Abstract: SMD CAPACITOR CODE b7 096TYPE TMK063 CG EMK107 MK107 MK212 R2K equivalent AMK06 AMK212
Contextual Info: Notice for TAIYO YUDEN products 1 Please read this notice before using the TAIYO YUDEN products. • Product information in this catalog is as of October 2008. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Taiyo 93-R

Abstract: Taiyo 93 T
Contextual Info: 当社製品に関するお断り 当社製品をご使用頂く際には事前に必ずお読み下さい。 注 意 • 当カタログの記載内容は2008年10月現在のものです。記載内容は改良などのために予告なく変更することがあります。従いま

75LP185

Abstract: 75C185 CDC9843 BERG CONNECTOR floppy drive tagram 74F138 IDT71216 LS138 MPC106 MPC972
Contextual Info: Yellowknife Hardware Reference Manual Page 1 /1 Yellowknife Reference Platform Hardware Design Manual Board Revision Level X4 Document Revision Level 1.0 Registration Number: Registration Name c Copyright 1998 by Motorola Incorporated. All rights reserved.

RKD701KN

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RKP203KN

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RKP202KN

Contextual Info: RKP202KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1312-0100 Rev.1.00 Dec 16, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.

FBM16

Contextual Info: f i s 1 > 0 $ HK, BK -> 'J - X ' M i v 5 i U - v a > Multi-Layer chip Inductor (HK, BK-Series) Wave-Form Simulation • ÌT -v m S § Model-circuit & Input of the condition ¿1CDV7 hij , £ t t « W M /W P ; w > * ? 2 B K v y - X f c z : ; |* W 3 f t $

AZ 2535 08 101

Abstract: Taiyo 93 T Taiyo 93-R
Contextual Info: ʁԓ‫@مॄ܆‬Ğ॥@ܶ‫ۉ‬ԓ५ ʁԓ‫@ڽॄ܆‬ԓ‫@֯ॣڏ‬Ĉ‫مڐ‬ɜ@ԓ‫@م۾‬э˝֫@‫ֲ֫ܶ@شے‬٤ N ܶ‫ۉ‬ԓ५ ᵉʁ@ࠥɳ΂ŗ‫@ۉ‬Ţ۩@Ƿ‫@ڼڏ‬RPPXȞQP‫@ڝ‬ঊ۩‫@ۉ‬ïۖɩɳNŢ۩@Ƿ‫@ۉڏ‬ÕԻ˦‫ک@ڽ‬६@ٝď‫@ێؾ‬ѽĈ०@@ր@@Ã@ۘ֨ɩ

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

automatic room power control

Abstract: MK105 SMD CAPACITOR CODE b7 BJ104K
Contextual Info: Notice for TAIYO YUDEN products 1 Please read this notice before using the TAIYO YUDEN products. • Product information in this catalog is as of October 2008. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the

RKP201KN

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RKP200KN

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RKP203KN

Contextual Info: RKP203KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1304-0100 Rev.100 Dec 16, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.

Contextual Info: Notice for TAIYO YUDEN products 1 Please read this notice before using the TAIYO YUDEN products. • Product information in this catalog is as of October 2008. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the

RKP201KN

Contextual Info: RKP201KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1311-0200 Rev.2.00 Jan 31, 2006 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

Contextual Info: RKP202KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1312-0100 Rev.1.00 Dec 16, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.

RKD750KN

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: RKV650KN Variable Capacitance Diode REJ03G1287-0100 Rev.1.00 Apr 20, 2006 Features • • • • Most suitable for terrestrial digital TV broadcasts capable Mobile phones. High capacitance ratio. n = 3.25 min Low series resistance. (rs = 0.75 Ω max)

RKP200KN

Contextual Info: RKP200KN Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1302-0200 Rev.2.00 Feb 14, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)