080451E Search Results

080451E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Developmental PTF 080451E High Power RF LDMOS FET 45 W, 860–960 MHz Description Features The PTF 080451E is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860–960 MHz bands. Full gold metallization ensures excellent device lifetime and reliability.	Original	080451E 080451E	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: Developmental PTF 080451E High Power RF LDMOS FET 45 W, 860–960 MHz Description Features The PTF 080451E is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860–960 MHz bands. Full gold metallization ensures excellent device lifetime and reliability.

Original

080451E 080451E

PDF

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

Original

B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

PDF