06APR2005 Search Results

15-21/g6c

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 1206 Package Chip LED 1.1 mm Height 15-21/G6C-BK1L2VY/2T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. RELEASED BY C O P Y R I G HT 2 0 TYCO ELECTRONICS FOR CORPORATION. ALL 20 PUBLICATION R 1G H T S LOC RESERVED. REV IS IONS D I ST CE 00 LTR DESCRIPTION REVISE 60.7 [2 .3 9 ] PER DWN DATE 0A00 - 0 09 2 -05 APVD LS 06APR2ÛÛ5

2N7002 MARKING

Abstract: 2N7002 2N7002 st 2N7002 di codes marking st2n 2N7000 MOSFET
Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 • ■ ■ Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V

"pocket Scale"

Contextual Info: EMIF04-MMC02F2 4-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm

transistor BS 17 P

Abstract: TRANSISTOR tip41c schematic diagram TRANSISTOR tip41c schematic TIP41C TIP41CN TIP42C TIP42CN
Contextual Info: TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE GROUPING hFE IMPROVED LINEARITY Figure 1: Package s t c u d o ) r s ( P t c e t u e d l o o r s

marking BS SOT23

Abstract: 2N7000 circuits
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application

Contextual Info: EMIF04-MMC02F2 4-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm

R20 marking

Abstract: AN1235 EMIF04-MMC02 EMIF04-MMC02F2 JESD97
Contextual Info: EMIF04-MMC02F2 4-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm

2N7002

Abstract: 2N7002 MARKING ST2N 2N7000 MOSFET 2n7000 2N7000G 2N7002 SOT23 codes marking st2n 2n7000 equivalent 2n7000 equivalents
Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V LOW Qg

2n7002

Abstract: mosfet 2N7000 2N7000
Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V LOW Qg

R20 marking

Abstract: AN1235 AN1751 EMIF04-MMC02 EMIF04-MMC02F2 JESD97
Contextual Info: EMIF04-MMC02F2 IPAD 4 line EMI filter including ESD protection Main product characteristics Where EMI filtering in ESD sensitive equipment is required: • Multimedia card for mobile phones, personal digital assistant, digital camera, MP3 players. Flip-Chip

TRANSISTOR tip41c schematic diagram

Abstract: TRANSISTOR tip41c schematic tip41c tip42c TIP41C TIP41CN TIP42C TIP42CN 18MAR2005
Contextual Info: TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE GROUPING hFE IMPROVED LINEARITY Figure 1: Package APPLICATION n GENERAL PURPOSE CIRCUITS n AUDIO AMPLIFIER

ST2N

Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

AN1235

Abstract: AN1751 EMIF04-MMC02 EMIF04-MMC02F2
Contextual Info: EMIF04-MMC02F2 4 LINES EMI FILTER INCLUDING ESD PROTECTION IPAD MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required: • MultiMedia Card for mobile phones, Personal Digital Assistant, Digital Camera, MP3 players.

TRANSISTOR tip41c schematic diagram

Abstract: TRANSISTOR tip41c schematic 0104S TIP41C TIP41CN TIP42C TIP42CN
Contextual Info: TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n Figure 1: Package COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE GROUPING hFE IMPROVED LINEARITY APPLICATION n GENERAL PURPOSE CIRCUITS n AUDIO AMPLIFIER

2N7000 MOSFET

Abstract: 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97
Contextual Info: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Description This MOSFET is the second generation of