06AUG Search Results

Contextual Info: RELEASED FO R ALL P U B L IC A T IO N R IG H TS APR ,2 0 0 6 - REVISIO N S RESERVED. R LTR D E S C R IP T IO N RELEASED AS PER DATE ECR-09-01 7658 DWN 06AUG2009 ECR-1 0 - 0 2 6 5 3 7 A PVD SRE PCH KK HMR 22JA N1 DIM B \J 1.00 0.60±0.05 TE 2.00 TYP TYP LOGO

Qualification Test Report

Contextual Info: 4 3 RELEASED FOR PUBLICATION COPYRIGHT BY ^ C O ELECTRONICS CORPORATION. 2 MAR ,2 0 0 6 - R EVISIO N S ALL INTERNATIONAL RIGHTS RESERVED. R LTR D ESC R IPTIO N DATE RELEA SED AS PER E C R - 0 9 - 0 1 7 6 5 8 DWN 06AUG09 APVD S RE PCH D C + 0 .2 0 - B + 0.20

545 305

Contextual Info: 2 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC AF ALL RIGHTS RESERVED. 1 DIST REVISIONS 50 LTR M D CONTINUOUS DATE DWN APVD 06AUGÛ3 JR GP DESCRIPTION REV PER S TR IP ON 0 G 3 A —0 4 1 2 —0 3 D REEL.

Contextual Info: T H IS D R A W IN G IS COPYRIGHT U N P U B L IS H E D . R ELEASED FO R 27 - 0 2 -0 2 P U B L IC A T IO N LOC ALL RIGHTS RESERVED. 2002 D IST REVISIO N S 00 DWN D E S C R IP TIO N RE VISED PER APVD 1 CJV CWR ECO-1 2 - 0 1 4 3 5 5 06AUG20 2 D r V C D FOR ASSEMBLY DETAILS

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - By - 6 5 4 2 3 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. LOC DIST CM 54 R E VIS IO N S LTR DESCRIPTION REVISED PER E C O - 12 - 0 0 7 8 0 7 DATE DWN APVD 06AUG12 KH SM 1 UNIT ACCEPTS 1.14 [.045] SQUARE OR ROUND POST.

EIA-364-31

Abstract: EIA-364-32 EIA-364-65 GR-1217-CORE GR1217-CORE
Contextual Info: Product Specification 108-2254 06Aug09 Rev A Vertical AMC Card Edge Connector 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for the Tyco Electronics Vertical AMC Card Edge Connector. 1.2. Qualification W hen tests are perform ed on the subject product line, procedures specified in Figure 1 shall be used.

Contextual Info: 4 3 RELEASED FOR PUBLICATION 2 MAR ,2 0 0 6 - R EVISION S ALL RIGHTS RESERVED. R LTR D D ESC R IPTIO N DWN DATE APVD RELEASED AS PER E C R - 0 9 - 0 1 7 6 5 8 06AUG 09 SRE PCH E C R -1 0 - 0 2 6 5 3 7 21 JAN 1 KK HMR C + 0.20- B + 0.20 - A + 0 .1 0 o o +lo

Contextual Info: 4 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAW IN G IS UNPUBLISHED. COPYRIGHT 19 RELEA S E D FOR P U B L IC AT IO N BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 AF RIGHTS RESERVED. DIST RE VI SIO NS 50 ZONE LTR c D DATE APPD 06AUG98 SU/KR DESCRIPTION

Contextual Info: 4 THIS DRAWING IS C O P Y R IG H T 3 U N P U B L IS H E D . RELEASED 19 BY AMP INCORPO RA TE D. FOR ALL PUBLICATION RIGHTS 2 19 LOC RE SE R VE D . DI ST REVISIONS 50 AF L TR DESCRIPTION REDRAWN PER OG3A-0088-99 DATE DWN APVD 06AUG99 JR DD D CONTINUOUS S T R I P

Contextual Info: 108-1919 Product Specification 06Aug99 Rev A EC 0990-0896-99 SMA Series Printed Circuit Board Mounted Connectors 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for AMP* SMA Series printed circuit board mounted connectors.

Contextual Info: 06AUG2013 C-480516

Contextual Info: 4 TH IS DRAWING IS U N P U B L IS H E D . COPYRIGHT 3 RELEASED FOR A LL PU B LIC ATIO N RIG HTS 2 - ,- R E V IS IO N S R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. P LTR D E S C R IP TIO N B3 1\ Z I N C PER REV PER ECO—09—005796 DATE DWN APVD 06AUG2009

SiA929DJ

Contextual Info: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual

Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

SIA456DJ

Contextual Info: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

12NC ordering code vishay

Abstract: SFR2500 sfr250000100 SFR250000
Contextual Info: SFR16S/25/25H Vishay BCcomponents Standard Metal Film Leaded Resistors FEATURES • Low cost • Low noise max. 1.5 µV/V for R > 1 MΩ • Small size (SFR16S: 0204, SFR25/25H: 0207) A homogeneous film of metal alloy is deposited on a high grade ceramic body. After a helical groove has been cut in

10n62k3

Abstract: STF10N62K3 STI10N62K3 STF10N62K3 ST 10N6 10n62
Contextual Info: STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS on max Pw ID 3 STF10N62K3 STFI10N62K3 STI10N62K3

Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA1202TS Battery power unit Objective specification File under Integrated Circuits, IC03 2000 Jun 08 Philips Semiconductors Objective specification Battery power unit TEA1202TS FEATURES GENERAL DESCRIPTION • Fully integrated battery power unit, including complete

44-PIN

Abstract: M48T129V M48T129Y
Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

Contextual Info: 4 TH IS D R A W IN G IS 2 U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY ^C O ELECTRONICS P U B LIC A TIO N R IG H TS - - R E V IS IO N S RESERVED. G CORPORATION. LT R E2 D E S C R IP T IO N REVISED PER ECR 0 7 - 0 2 2 9 3 2 D APVD JR CLIPPER PER ASTM B152

Contextual Info: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21

marking code vishay SILICONIX

Abstract: SIA915DJ
Contextual Info: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SIA461DJT1GE3

Abstract: 63838 sia461djt
Contextual Info: New Product SiA461DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 20 ID (A)a 0.033 at VGS = - 4.5 V - 12 0.042 at VGS = - 2.5 V - 12 0.055 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package

SiA445EDJ

Abstract: SIA445EDJ-T1-GE3
Contextual Info: New Product SiA445EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) Max. ID (A) 0.0165 at VGS = - 4.5 V - 12a 0.0185 at VGS = - 3.7 V - 12a 0.0300 at VGS = - 2.5 V a Qg (Typ.) 23 nC - 12 PowerPAK SC-70-6L-Single