10N6 Search Results

10N6 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK110N65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 24 A, 0.11 Ohm@10V, TO-247

10N6 Price and Stock

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STMicroelectronics STD10N60M2 MOSFET N-CH 600V 7.5A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD10N60M2	Digi-Reel	4,849		1	1 $2.1 10 $1.344 100 $2.1 1000 $0.66486 10000 $0.66486	Buy Now
Newark	STD10N60M2	Bulk	10,999		1	1 $1.7 10 $1.15 100 $0.812 1000 $0.612 10000 $0.551	Buy Now
STMicroelectronics	STD10N60M2		16,712		1	1 $1.67 10 $1.13 100 $0.8 1000 $0.65 10000 $0.65	Buy Now
Avnet Silica	STD10N60M2		97,500	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	STD10N60M2	Cut Tape	2,500			1 - 10 $1.05 100 $0.747 1000 $0.55 10000 $0.506	Buy Now

Win Source Electronics	STD10N60M2		30,000			1 - 10 - 100 - 1000 $0.3063 10000 $0.2746	Buy Now
Infineon Technologies AG IGB10N60TATMA1 IGBT NPT FS 600V 20A TO263-3-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IGB10N60TATMA1	Digi-Reel	3,785		1	1 $1.91 10 $1.216 100 $1.91 1000 $0.64944 10000 $0.64944	Buy Now
	IGB10N60TATMA1	Cut Tape	3,785		1	1 $1.91 10 $1.216 100 $1.91 1000 $0.64944 10000 $0.64944	Buy Now
	IGB10N60TATMA1	Reel	3,000		1,000	1 - 10 - 100 - 1000 $0.59476 10000 $0.4925	Buy Now
Rochester Electronics	IGB10N60TATMA1		1,062		1	1 $0.5472 10 $0.5472 100 $0.5144 1000 $0.4651 10000 $0.4651	Buy Now
Chip One Stop	IGB10N60TATMA1	Cut Tape	935			1 $0.576 10 $0.575 100 $0.574 1000 $0.565 10000 $0.565	Buy Now
Cal-Chip Electronics CHV1210N630152JCT HVCAP1210 COG 1500PF 5% 630V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CHV1210N630152JCT	Cut Tape	990		1	1 $1.23 10 $0.769 100 $0.5245 1000 $0.42538 10000 $0.42538	Buy Now
	CHV1210N630152JCT	Digi-Reel	990		1	1 $1.23 10 $0.769 100 $0.5245 1000 $0.42538 10000 $0.42538	Buy Now
Littelfuse Inc IXFA10N60P-TRL MOSFET N-CH 600V 10A D2-PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFA10N60P-TRL	Digi-Reel	700		1	1 $5.21 10 $3.466 100 $5.21 1000 $5.21 10000 $5.21	Buy Now
	IXFA10N60P-TRL	Cut Tape	700		1	1 $5.21 10 $3.466 100 $5.21 1000 $5.21 10000 $5.21	Buy Now
STMicroelectronics STF10N60M2 MOSFET N-CH 600V 7.5A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF10N60M2	Tube	477		1	1 $1.92 10 $1.92 100 $1.92 1000 $0.59981 10000 $0.4975	Buy Now
Newark	STF10N60M2	Bulk	63		1	1 $2.04 10 $1.18 100 $1.09 1000 $0.918 10000 $0.8	Buy Now
STMicroelectronics	STF10N60M2		2,946		1	1 $1.51 10 $0.91 100 $0.81 1000 $0.7 10000 $0.7	Buy Now
Bristol Electronics	STF10N60M2		1,900			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STF10N60M2		2,000	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip One Stop	STF10N60M2	Tube	2,835			1 $1.35 10 $0.95 100 $0.726 1000 $0.512 10000 $0.471	Buy Now

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10N6 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
10N60	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF
10N60-A-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF
10N60-B-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF
10N60C5M	IXYS	CoolMOS Power MOSFET	Original	PDF
10N60L-A-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF

10N6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60at QW-R502-743	PDF
10n65 Abstract: tf 10n65 Text: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	10N65 10N65 QW-R502-588 tf 10n65	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60KG-TF1-T O-22at QW-R502-743	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N65K 10N65K 10N65KL-TF3-T 10N65KG-TF3-T O-220F 10N65KL-TF1-T 10N65KG-TF1-hat QW-R02-755	PDF
10N60G Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N67Y0/S35A dimension drawing general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange adjustment	Original	10N67Y0/S35A 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N67YR dimension drawing 36,7 15,9 3,7 9,2 33,8 6,2 10 70,2 general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display	Original	10N67YR 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N69YB dimension drawing general data photo actual range Sb FSE 200C1002 240 mm sensing distance Tw (FUE 200C1003) 60 mm light source pulsed blue LED light indicator 1 x 3-digit display output indicator LED orange adjustment	Original	10N69YB 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N69YB dimension drawing general data photo actual range Sb FSE 200C1002 240 mm sensing distance Tw (FUE 200C1003) 60 mm light source pulsed blue LED light indicator 1 x 3-digit display output indicator LED orange adjustment	Original	10N69YB 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N69Y0 Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display	Original	10N69Y0 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N69Y0 dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display output indicator LED orange adjustment	Original	10N69Y0 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N67YS dimension drawing general data photo version slave actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange	Original	10N67YS 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N67Y0 dimension drawing 36,7 15,9 3,7 9,2 33,8 6,2 10 70,2 general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display	Original	10N67Y0 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N69YR Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display	Original	10N69YR 200C1002) 200C1003)	PDF

Untitled Abstract: No abstract text available Text: Photoelectric sensors FVDK 10N67YS dimension drawing general data photo version slave actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange	Original	10N67YS 200C1002) 200C1003)	PDF
Untitled Abstract: No abstract text available Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C	Original	10N60C5 O-220	PDF
10n60b Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 10N60B2D1 IC110 O-247 8-06B 405B2 10n60b	PDF
10n60p Abstract: d 1065 Text: PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A ≤ 740 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V	Original	10N60P O-220 O-263 O-263) O-263 10n60p d 1065	PDF
10N60C Abstract: IXKP10N60C5 Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	10N60C5 O-220 20080523b 10N60C IXKP10N60C5	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	10N60K-MT 10N60K-MT QW-R205-022	PDF
Untitled Abstract: No abstract text available Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	10N60C5M O-220 20090209d	PDF
Untitled Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2	PDF
diode DSDI 9 Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B	OCR Scan	O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A	PDF
10N60A Abstract: IGBT 10N60 10N6Q Text: nixYS ^ 10N60 IXGA/IXGH 10N60A \|g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s	OCR Scan	IXGH10N60 10N60A O-263 O-247 10N60 10N60A 10N60U1 10N60AU1 D94006DE, IGBT 10N60 10N6Q	PDF

10N6 Search Results

10N6 Result Highlights (1)

10N6 Price and Stock

STMicroelectronics STD10N60M2

Infineon Technologies AG IGB10N60TATMA1

Cal-Chip Electronics CHV1210N630152JCT

Littelfuse Inc IXFA10N60P-TRL

STMicroelectronics STF10N60M2

10N6 Datasheets (5)

10N6 Datasheets Context Search

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10n65

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10N60G

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10n60b

10n60p

10N60C

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diode DSDI 9

10N60A