05MAY201 Search Results

LED 2388

Abstract: 1888507-2
Contextual Info: 2 THIS D R A WI N G IS UNPUBLISHED. RELEASED ALL C O P Y R I G H T 20 FOR PUBLICATION RI GHTS 20 LOC R ES ERVED. DIST REVISIONS 00 AA LTR DESCRIPTION REVISED B4 PER ECO-I DATE 1- 005033 DWN 05MAY201 I RK APVD H MR 59. 82 L E D 2TYP 1 1 I— h Â1 1 n 1 fi

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2006 2 3 1 2006 RELEASED FOR PUBLICATION REVISIONS ALL RIGHTS RESERVED. BY - 69.1+0.6 P C 13.3 D DESCRIPTION LTR C1 DWN APVD SERIES GEOMETRY 23MAY2007 SKA TG UPDATED TOLERANCE LENGHT 61.1 05MAY2011 AV GT ECR-14-001570

4n62k

Abstract: 4N62 STF4N62K3 STFI4N62K3 i-pak Package zener diode 4N62K3
Contextual Info: STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features Order codes STF4N62K3 STFI4N62K3 STI4N62K3

Contextual Info: LM337 Three-terminal adjustable negative voltage regulators Datasheet - production data current limit, thermal overload protection and safe area protection. All overload protection circuitry remains fully functional even if the adjustment terminal is disconnected.

LFXX

Contextual Info: LFXX Very low drop voltage regulator with inhibit function Datasheet - production data Description TO-220 TO-220FP PPAK DPAK Features • Very low-dropout voltage 0.45 V • Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) • Output current up to 500 mA

TDA75616LV-48X

Contextual Info: TDA75616LV 4 x 45 W power amplifier with full I2C diagnostics, SSR and low voltage operation Datasheet - production data • Standby/mute pin  Linear thermal shutdown with multiple thermal warning  ESD protection  Very robust against misconnections

Contextual Info: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kbyte Flash memory Datasheet - production data Features • Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 8-Kbyte RAM and 64-Kbyte Flash memory

LF50CDT-TRY

Abstract: transistor lf33cv AEC-Q100 LF15AB LF18AB LF18C LF25AB LF25C LF33AB LF33C
Contextual Info: LFxxAB LFxxC Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown

Contextual Info: SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE ℃ 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYESD2025S Bi-Directional Transient Voltage Suppressing Diode

Contextual Info: TH I S DRAWING IS UNPUBLISHED. C O P Y R I G HT 2 0 0 6 RELEASED BY TYCO 69.r ELECTRONICS FOR COR P O R AT I O N . A L L PUBLICATION R|CHTS 2006 LOC RESERVED. D I ST R E V I S I ON S Al LTR 0.6 C1 [Ml DESCRIPTION DWN DATE APVD SER IES GEOMETRY 23MAY2007 SKA

Contextual Info: M24C02-A125 Automotive 2-Kbit serial I²C bus EEPROM with 1 MHz clock Datasheet - target specification Features • Compatible with all I2C bus modes – 1 MHz – 400 kHz – 100 kHz TSSOP8 DW 169 mil width • Memory array – 2 Kbits (256 bytes) of EEPROM

to3fp

Abstract: STW60N65
Contextual Info: STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features • Order codes VDSS @ TJmax RDS on max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A 1 Worldwide best RDS(on) * area amongst the silicon based devices

Contextual Info: TDA75612LV 4 x 45 W power amplifier with full I2C diagnostics, SSR and low voltage operation Datasheet - production data • Standby/mute pin  Linear thermal shutdown with multiple thermal warning  ESD protection  Very robust against misconnections

NTC SD-9

Contextual Info: STGIPN3H60T-H SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet - preliminary data Applications • 3-phase inverters for motor drives • Dish washers, refrigerator compressors, heating systems, air-conditioning fans,

Contextual Info: WT-106CP12 A Zener Diode Chips for ESD Protection 1. Feature and Application: 1-1 This specification is suitable for P/N zener single-direction structure chips use. 1-2 Paralleled the LED. 1-3 Unity pad metal (one wire bonding applied only). 1-4 One-way Zener diode protection.

c16tj

Abstract: SO20 VNQ860-E VNQ860SP-E
Contextual Info: VNQ860-E VNQ860SP-E Quad channel high side driver Features Type RDS on (1) Iout VCC VNQ860-E VNQ860SP-E 270 mΩ 0.25 A 36 V 1. Per each channel SO 20 • CMOS compatible I/Os ■ Undervoltage and overvoltage shutdown ■ Shorted load protection ■ Thermal shutdown

Contextual Info: TH IS IT L OG A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N TO C HANG E AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N S H O U LD BE C ON T A C T E D FOR THE L A T E S T R E V I S I O N .

Contextual Info: STG3692 Low voltage high bandwidth quad SPDT switch Features • Ultra low power dissipation: – ICC = 0.2 µA max. at TA = 85 °C ■ Low “ON” resistance: – RON = 4.6 Ω (TA = 25 °C) at VCC = 4.3 V – RON = 5.8 Ω (TA = 25 °C) at VCC = 3.0 V ■

4N62K3

Abstract: STD4N62K3
Contextual Info: STD4N62K3 STU4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3 Power MOSFET DPAK, IPAK Preliminary data Features Type STD4N62K3 STU4N62K3 VDSS RDS on max ID Pw 620 V < 1.95 Ω 3.8 A 70 W 3 3 2 1 • 100% avalanche tested ■ Extremely high dv/dt capability

Contextual Info: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C

4n62k

Contextual Info: STF4N62K3, STI4N62K3 STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET TO-220FP, IPAK, TO-220, I²PAK Features Order codes VDSS RDS on max ID Pw 3.8 A 25 W 70 W 70 W 70 W 3 STF4N62K3 STI4N62K3 STP4N62K3 STU4N62K3 620 V <2Ω •

Contextual Info: WTG3043 Surface Mount N-Channel Power MOSFET P b Lead Pb -Free 3 1 1. Gate 2. Source 3. Drain 2 Features: * * * * * Enables High Density PCB Manufacturing 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 Low Voltage Drive Makes this Device Ideal for Portable Equipment

Contextual Info: HSP061-8M16 8-line ESD protection for high speed lines Datasheet - production data Applications The HSP061-8M16 is designed to protect against electrostatic discharge on sub micron technology circuits driving: • HDMI 1.3 and 1.4 • Digital Video Interface

soc2907

Abstract: 2N2907AUB
Contextual Info: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.