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    U92A411105A70 Amphenol Communications Solutions MiniSAS HD, High Speed Input Output Connector, 1X4 CAGE CONN COMBO W LPLP. Visit Amphenol Communications Solutions
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    TDK Electronics B41505A7109M000

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    Torex Semiconductor LTD XC6505A751ER-G

    IC REG LINEAR 7.5V 200MA 6USPC
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    05A7 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    05A7 Rectron Semiconductor SURFACE MOUNT SILICON RECTIFIER Original PDF
    05A7-W Rectron Semiconductor SURFACE MOUNT SILICON RECTIFIER Original PDF

    05A7 Datasheets Context Search

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    05A4

    Abstract: 05A1 05A2 05A3 05A5 05A6 05A7
    Text: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction


    Original     		PDF OD-123F 300us

    Untitled

    Abstract: No abstract text available
    Text: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction


    Original     		PDF OD-123F

    Untitled

    Abstract: No abstract text available
    Text: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction


    Original     		PDF 300us

    Untitled

    Abstract: No abstract text available
    Text: 05A1L RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7L SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction


    Original     		PDF 05A1L 05A7L OD-123FL 300us

    05A7L

    Abstract: SOD-123FL
    Text: 05A1L THRU 05A7L SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.016 gram SOD-123FL


    Original     		PDF 05A1L 05A7L OD-123FL 05A7L SOD-123FL

    05A1

    Abstract: 05A2 05A3 05A4 05A5 05A6 05A7
    Text: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction


    Original     		PDF OD-123 05A1 05A2 05A3 05A4 05A5 05A6 05A7

    Untitled

    Abstract: No abstract text available
    Text: 05A1L RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7L SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction


    Original     		PDF 05A1L 05A7L OD-123FL 300us

    Untitled

    Abstract: No abstract text available
    Text: 05A1L THRU 05A7L SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.016 gram SOD-123FL


    Original     		PDF 05A1L 05A7L OD-123FL

    05A1

    Abstract: 05A2 05A3 05A4 05A5 05A6 05A7
    Text: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction


    Original     		PDF OD-123F 05A1 05A2 05A3 05A4 05A5 05A6 05A7

    KFG2G16Q2A

    Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
    Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash

    TSP50C04

    Abstract: BD 4914 MX 0541 TSP5220 TSP50C12 BA 59 04AF P DAC 0804 interfacing DAC with 0830 microprocessor LCD 16PIN mozart
    Text: TSP50C0x/1x Family Speech Synthesizer Design Manual 2000 Linear Products SPSS011D IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF TSP50C0x/1x SPSS011D TSP50C04 BD 4914 MX 0541 TSP5220 TSP50C12 BA 59 04AF P DAC 0804 interfacing DAC with 0830 microprocessor LCD 16PIN mozart

    thermistor R53

    Abstract: thermistor R55 ADC 8040 CD4511 tunable lasers diode applications 7seg led ADN2830 ADN8830 fujitsu optical module tunable laser rs-232
    Text: AN-655 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Tunable Laser Reference Design for Designers with the ADuC832/ADN8830/ADN2830 by Nobuhiro Matsuzoe FEATURES


    Original     		PDF AN-655 ADuC832/ADN8830/ADN2830 GHz/50 /RS-232) ADuC832 ADN8830 ADN2830 FLD5F15CA E03717 thermistor R53 thermistor R55 ADC 8040 CD4511 tunable lasers diode applications 7seg led fujitsu optical module tunable laser rs-232

    4GB MLC NAND

    Abstract: SAMSUNG NAND Flash MLC
    Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KFM2G16Q2M-DEBx) KFN4G16Q2M-DEBx) KFM2G16Q2M KFN4G16Q2M 80x11 KFM2G16Q2M) KFN4G16Q2M) 4GB MLC NAND SAMSUNG NAND Flash MLC

    THEFT

    Abstract: "Mitsubishi SINGLE CHIP MICROCOMPUTER" c816 M30217MA-XXXXFP M30218 M30218FCFP M30218MC-XXXXFP DSA003632
    Text: Mitsubishi single-chip microcomputer M30218 Group User’s manual tentative Specifications written in this user's manual are believed to be accurate, but are not guaranteed to be entirely free of error. Specifications in this manual may be changed for functional or performance improvements. Please make sure your manual is the latest edition.


    Original     		PDF M30218 THEFT "Mitsubishi SINGLE CHIP MICROCOMPUTER" c816 M30217MA-XXXXFP M30218FCFP M30218MC-XXXXFP DSA003632

    Untitled

    Abstract: No abstract text available
    Text: QPL RF INDUCTORS - THRU HOLE ER18M TRADITIONAL Estabilished Reliability Wirewound, Molded, Qualified, MIL-PRF-39010 Pb M39010/04 Phenolic Core /05 Powdered Iron Core PART NUMBER MIL PART L µH Q NUMBER MIN ER18M150*M ER18M160JM ER18M180*M ER18M200JM ER18M220*M


    Original     		PDF ER18M MIL-PRF-39010 M39010/04 ER18M150 ER18M160JM ER18M180 ER18M200JM ER18M220 ER18M240JM ER18M270

    DW016

    Abstract: d 1830 STR W 6262 TSP50C19 2506 power supply schematic gogo board UNL 2803 DAC 0804 dac 2113 0703 idle Sharp Semiconductor
    Text: MSP50x3x Mixed-Signal Processor User’s Guide SPSU006B October 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF MSP50x3x SPSU006B DW016 d 1830 STR W 6262 TSP50C19 2506 power supply schematic gogo board UNL 2803 DAC 0804 dac 2113 0703 idle Sharp Semiconductor

    63FBGA

    Abstract: KFN4G16Q2A
    Text: MuxOneNAND2G KFM2G16Q2A-DEBx MuxOneNAND4G(KFN4G16Q2A-DEBx) FLASH MEMORY KFM2G16Q2A KFN4G16Q2A 2Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KFM2G16Q2A-DEBx) KFN4G16Q2A-DEBx) KFM2G16Q2A KFN4G16Q2A 80x11 KFM2G16Q2A) KFN4G16Q2A) 63FBGA KFN4G16Q2A

    Untitled

    Abstract: No abstract text available
    Text: OneNAND2G KFG2G16Q2M-DEBx OneNAND4G(KFH4G16Q2M-DEBx) OneNAND8G(KFW8G16Q2M-DEBx) Preliminary FLASH MEMORY KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M 2Gb OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF KFG2G16Q2M-DEBx) KFH4G16Q2M-DEBx) KFW8G16Q2M-DEBx) KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M KFH4G16Q2M)

    Untitled

    Abstract: No abstract text available
    Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KFM2G16Q2M-DEBx) KFN4G16Q2M-DEBx) KFM2G16Q2M KFN4G16Q2M SG200602485

    SMA DO-214AC SA4

    Abstract: No abstract text available
    Text: S RoH ant li p C om GLASS PASSIVATED SILICON SURFACE MOUNT DEVICES PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGE TEMPERATURE RANGE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave


    Original     		PDF DB101S DB102S DB103S DB104S DB105S DB106S DB107S SMA DO-214AC SA4

    KFN4G16Q2M

    Abstract: NAND SAMSUNG
    Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) MuxOneNAND8G(KFK8G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M KFK8G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF KFM2G16Q2M-DEBx) KFN4G16Q2M-DEBx) KFK8G16Q2M-DEBx) KFM2G16Q2M KFN4G16Q2M KFK8G16Q2M KFM2G16Q2M) 80x11 KFN4G16Q2M) NAND SAMSUNG

    MSTAR 901

    Abstract: MSTAR 828 dic a700 stk 795 821 GE 8352 MSTAR 309 108 046f 864F 5252 F 0921 XD 5252 F
    Text: fig-FORTH FOR PACE ASSEMBLY SOURCE LISTIN G RELEASE 1 WITH COMPILER SECURITY AND VARIABLE LENGTH NAMES MAY 1979 This public domain publication is provided through the courtesy of the Forth Interest Group, P .O . Box 1105, San Carlos, CA 94070. Further distribution must include this notice.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GOLDSTAR TECHNOLOGY IN C / 47E ]> • 402Ô7S7 GoldStar 1 «GST 0003433 TWé-23-/5 G M 7 1 C 4 1 0 0 A /A L 4,194,304 WORDSxl BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ namic RAM organized 4,194,304 x 1 Bit. GM71C4100A/AL has realized higher density, higher per­


    OCR Scan     		PDF GM71C4100A/AL 300-mil 20-pin 400-mil 05A7S7