053SFC Search Results

Contextual Info: 053Sfc.0S 0030337 ê SIEG Selection Guide SIEMENS AKT IENGESELLSCHAF 47E D EMI suppression chokes l-core chokes Rated inductance per winding Rated Type Rated voltage Double current per Single choke winding choke 500 Vac 20 nH to B82504 1 to 25 A 65 |iH to

Contextual Info: 053Sfc.0S 0030337 ê SIEG SIEMENS AKT IENGESELLSCHAF 47E D Selection Guide EMI suppression chokes l-core chokes Rated inductance per winding Type Rated Double current per Single choke winding choke 65 |iH to 27 mH 20 nH to 3 mH 500 Vac B82505 4 to 100 A 56 piH to

B82508

Contextual Info: 053Sfc.0S 0030337 ê SIEG SIEMENS AKT IENGESELLSCHAF 47E D Selection Guide EMI suppression chokes l-core chokes Rated inductance per winding Type Rated Double current per Single choke winding choke 65 |iH to 27 mH 20 nH to 3 mH 500 Vac B82505 4 to 100 A 56 piH to

Contextual Info: 053Sfc.0S 0 0 3 0 3 3 7 SIEG ê Selection Guide SIEMENS A KT IE N G ES E LL SC H A F 47E D EMI suppression chokes l-core chokes Rated inductance per winding Type Rated Double current per Single choke winding choke 65 |iH to 27 mH 20 nH to 3 mH 500 Vac B82505 4 to 100 A 56 piH to

Contextual Info: 053Sfc.0S 0030337 ê SIEG SIEMENS AKTIENGESELLSCHAF 47E D Selection Guide EMI suppression chokes l-core chokes Rated inductance per winding Type Rated Double current per Single choke winding choke 65 |iH to 27 mH 20 nH to 3 mH 500 Vac B82505 4 to 100 A 56 piH to

B82524

Contextual Info: 053Sfc.0S 0030337 ê SIEG SIEMENS AKTIENGESELLSCHAF 47E D Selection Guide EMI suppression chokes l-core chokes Rated inductance per winding Type Rated Double current per Single choke winding choke 65 |iH to 27 mH 20 nH to 3 mH 500 Vac B82505 4 to 100 A 56 piH to

Contextual Info: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998

siemens igbt BSM 75 gb 100

Abstract: GTS FC-22 1B02 siemens igbt BSM 150 gb 100 d gts fc-518ls
Contextual Info: SIEMENS IGBT Module BSM 75 GB 160 D 750gb16a doc VCE= 1600 V /c = 2* 100 A at r c = 25°C lc = 2* 75 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half bridge Type BSM 75 GB 160D