04MAY2 Search Results

Contextual Info: 2 THIS C D R A WI N G IS C O P Y R I G H T 20 UNPUBLISHED. BY RELEASED FOR ALL - PUBLICATION RI GHTS 20 LOC R ES ERVED. DIST REVISIONS 00 GP LTR DESCRIPTION REVISED A3 PER DATE 04MAY2012 ECO-I 2-008364 HOUSING: LCP, UL94V0, COLOR: CONTACT: PHOSPHOR BRONZE.

250 ohm resistor

Contextual Info: r 8 j 5 COPYRIGHT - KLEASEb PM PU6U&MM - 7 •- n 1 • REVISIONS AA 22 BY Tvn) FI FRTMMCS CORPOMKM. BB ER PD BR REV PER ECO—08—011039 RQ TX 04MAY2008 / 1 \ MATERIALS: H OU S I N G - T H E R M O P L A S T I C P E T P O L Y E S T E R F L A M M A B I L I T Y R A T I N G UL 9 W - 0

MULTIGIG RT2 CONNECTOR

Abstract: edge connector 6 x 2 T 1840 PA
Contextual Info: 2 THI S C DRAWI NG IS C OP YRI GHT 20 U NPU B L I S HE D. R E L E A S E D FOR P U B L I C A T I O N ALL BY - RI GHTS 20 LOC R ES ERVE D. GP DIST REVISIONS 00 LTR DESCRIPTION REVISED B2 DAUGHTERCARD PER DATE DWN 04MAY20 12 ECO-I 2-008364 APVD KH AS 8 l ±0

UL444

Contextual Info: THIS DRAWING IS UNPUBLISHED. C O P Y RI G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC REV I S I O N S D IS T 00 RESERVED. LTR DE SC R IP T I O N RLSD; NSD03-08I REV ONE CABLE LS 04MAY2004 LHS LDS GG CC REV; ECR-05-000460

SSD40N10-30D

Abstract: MosFET
Contextual Info: SSD40N10-30D 26A, 100V, RDS ON 36mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.

AN2846

Abstract: AN2853 EN60947-5-2 IEC61131-2 VNI8200XP optotransistors surface mount spi Low Side Driver ST
Contextual Info: SCLT3-8BT8 Protected digital input termination with serialized state transfer Features • 8-input circuit in common ground low side topology ■ Wide range input DC voltage VI : -30 V to 35 V – On state threshold : < 11 V with RI = 2.2 kΩ – Off state threshold: Iin > 1.5 mA or Vi > 5 V

Contextual Info: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package

ST490ACN

Abstract: JESD97 ST490A ST490ABDR ST490ABN ST490ACDR
Contextual Info: ST490A Low power high speed RS-485/RS-422 transceiver General features • ■ Low supply current: 5mA max -7V to 12V common mode input voltage range ■ 70mV tipycal input hysteresis ■ Designed for 25Mbps operation ■ Operate from a single 5V supply ■

VCSO

Abstract: VS509
Contextual Info: VS-509 Dual Frequency VCSO Features • Industry Standard Package, 9.1 x 13.8 x 3.1 mm  5 Generation ASIC Technology for Ultra Low Jitter 125 fs-rms fN = 622.08 MHz, 12 kHz to 20 MHz 120 fs-rms (fN = 622.08 MHz, 50 kHz to 80 MHz) th  Output Frequencies from 150 MHz to 1000 MHz

RJ45 jack modular

Contextual Info: Qualification Test 501-57718 Report 28-Apr-2006 Rev A MODULAR JACK, RJ45, SINGLE, ENTRY, DIP TYPE 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco MODULAR JACK, RJ45, SINGLE, ENTRY, DIP TYPE to determine its conformance to the requirements of Product

Contextual Info: VNQ810PEP-E Quad channel high side driver Features Type RDS on IOUT VCC VNQ830PEP-E 160 m(1) 5 A(1) 36 V 1. Per each channel. PowerSSO-24 •CMOS compatible inputs Description •Open Drain status outputs •On-state open load detection The VND810PEP-E is a monolithic device made

ST 358

Abstract: isotop bipolar JESD97 STE70IE120 E70IE120
Contextual Info: STE70IE120 Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Ω Power Module Target data General features VCS ON IC RCS(ON) 1V 70A 0.014W • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance

M36L0T7050T2

Abstract: M58LT128HB M58LT128HT M36L0t7050
Contextual Info: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM

ST1S03APMR

Abstract: schematic diagram dc-dc 12 to 5v/1,5A JESD97 ST1S03A ST1S03AIPMR ST1S03AIPUR ST1S03APUR
Contextual Info: ST1S03A 1.5A, 1.5 MHz Adjustable, with inhibit function Step-down switching regulator in DFN6 3x3 Features • Step-down current mode PWM 1.5MHz DCDC converter ■ 2% DC output voltage tolerance ■ Internal soft start for start-up current limitation and power on delay of 50-100µs

AN2970

Abstract: CHARGE-TRANSFER stm8t
Contextual Info: AN2970 Application note Principles of capacitive touch and proximity sensing technology The objective of this document is to present the principles of capacitive sensing and charge transfer used in STMicroelectronics STM8T and STM8TS capacitive sensors. All devices

JESD22

Abstract: JESD97 QFN16L STG5683 STG5683QTR
Contextual Info: STG5683 Low voltage dual SPDTswitch with negative rail capability Features • Distortion-free negative signal throughput down to VCC-5.5V ■ Wide operating voltage range: VCC Opr = 1.65V to 4.5V single supply ■ Ultra low power dissipation: ICC = 0.2µA (Max.) at tA = 85°C

bit 3102

Abstract: DS12887 M48T86 M4T28-BR12SH SOH28
Contextual Info: M48T86 5.0 V PC real-time clock Not For New Design Features • Drop-in replacement for PC computer clock/calendar ■ Counts seconds, minutes, hours, days, day of the week, date, month, and year with leap year compensation ■ Clock accuracy better than ±1 minute per

headlamp motor L9942

Abstract: L9942 L9942XPTR headlamp leveling
Contextual Info: L9942 Integrated stepper motor driver for bipolar stepper motors with microstepping and programmable current profile Preliminary Data Features • Two full bridges for max. 1.3 A load RDSON = 500 mΩ ■ Programmable current waveform with look-up table: 9 entries with 5bit resolution

STCL1100

Abstract: STCL1120 STCL1160
Contextual Info: STCL1100 STCL1120 STCL1160 High frequency silicon oscillator family Features • Fixed frequency 10/12/16 MHz ■ ±1.5% frequency accuracy over all conditions ■ 5 V ±10% operation ■ Low operating current, ultra low standby current ■ Push-pull, CMOS compatible frequency

744312150

Abstract: PM6641 PM6641TR 13510 1s05 PM6641EVAL
Contextual Info: PM6641 Monolithic VR for chipset and DDR2/3 supply for ultra-mobile PC UMPC applications Features • 0.8 V ±1% internal voltage reference ■ 2.7 V to 5.5 V input voltage range ■ Fast response, constant frequency, current mode control ■ Three independent, adjustable, out-of-phase

dmv 500 m

Contextual Info: VS-509 Dual Frequency VCSO Features • Industry Standard Package, 9.1 x 13.8 x 3.1 mm • 5th Generation ASIC Technology for Ultra Low Jitter 125 fs-rms fN = 622.08 MHz, 12 kHz to 20 MHz 120 fs-rms (fN = 622.08 MHz, 50 kHz to 80 MHz) • Output Frequencies from 150 MHz to 1000 MHz

SOT23-5 MARKING CODE K205

Abstract: STMicroelectronics 934I marking code K206 transistor TS934 932BI k205 TS931 TS931ILT TS932 TSSOP14
Contextual Info: TS931, TS932, TS934 Output rail-to-rail micropower operational amplifiers Features Pin connections top view • Rail-to-rail output voltage swing ■ Micropower consumption (20 A) ■ Single supply operation (2.7 to 10 V) Out 1 ■ Low offset (2 mV max. for TS93xB)

Contextual Info: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

ST8024LC

Contextual Info: ST8024L Smartcard interface Datasheet − production data Features • Designed to be compatible with the NDS conditional access system except ST8024LTR ■ ISO 7816, GSM11.11 and EMV 4.2 (payment systems) compatible SO-28 ■ IC card interface ■ 3 V or 5 V supply for the ST8024L device (VDD)