intel 80196 microcontroller
Abstract: 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2 PSD934F2
Text: PSD913F2 PSD934F2 PSD954F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD9xxF2 – 3.3 V±10% for PSD9xxF2-V ■ Up to 2Mbit of Primary Flash Memory (8 uniform
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PSD913F2
PSD934F2
PSD954F2
256Kbit
PQFP52
PLCC52
intel 80196 microcontroller
68HC11
68HC12
68HC16
80C251
J1850
PLCC52
PQFP52
PSD913F2
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JESD97
Abstract: L50NH3LL STL50NH3LL
Text: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■
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STL50NH3LL
JESD97
L50NH3LL
STL50NH3LL
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JESD97
Abstract: L100NH3LL STL100NH3LL
Text: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STL100NH3LL 30V <0.0035Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)
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STL100NH3LL
JESD97
L100NH3LL
STL100NH3LL
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Untitled
Abstract: No abstract text available
Text: STL60NH3LL N-CHANNEL 30V - 0.0065Ω - 30A - PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ Power MOSFET TARGET SPECIFICATION General Features Type VDSS RDS(on) ID STL60NH3LL 30V < 0.0085Ω 16A Note 2 • IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm Max)
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STL60NH3LL
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SD2942
Abstract: RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent
Text: SD2942 RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed
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SD2942
SD2942
SD2932.
RG316-25
marking code r10 surface mount diode
Wire wound resistor 5W
200B
700B
RG316
SD2932
ST40
SD2942 equivalent
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Untitled
Abstract: No abstract text available
Text: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction
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STGP30NC60W
STGW30NC60W
O-247
O-220
O-247
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Untitled
Abstract: No abstract text available
Text: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator
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ST10F272M
16-bit
16-bit
40-bit
32-bit
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Untitled
Abstract: No abstract text available
Text: STL50NH3LL N-channel 30V - 0.011Ω - 13A - PowerFLAT 6x5 Ultra low gate charge STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1mm max)
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STL50NH3LL
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GW30NC60W
Abstract: No abstract text available
Text: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 High frequency operation 1 Lower CRES / CIES ratio (no cross-conduction
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STGP30NC60W
STGW30NC60W
O-247
O-220
STGW30NC60W
STGP30NC60W
O-220
GW30NC60W
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Untitled
Abstract: No abstract text available
Text: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio
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STL80N4LL
STL80N4LL
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L80N4LL
Abstract: No abstract text available
Text: STL80N4LL N-CHANNEL 40V - 0.0046Ω - 80A PowerFLAT 6x5 STripFET™ MOSFET FOR DC-DC CONVERSION TARGET SPECIFICATION Table 1: General Features TYPE STL80N4LL • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 40 V < 0.005 Ω 20 A (2) TYPICAL RDS(on) = 0.0046 Ω @ 10V
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STL80N4LL
STL80N4LL
L80N4LL
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VIPer Design Software
Abstract: ST VIPER 22 ST VIPER 17 BE-16-118CPH be16-118cph EE16-Z PC30 from TDK AN1074 viper flyback transformer VIPER50 application note
Text: AN1074 Application note Solution proposal for auxiliary power supply using VIPer20-E Introduction The present board prototype is a 120 to 375 VDC input off-line single switch flyback, working at 100 kHz. It is based on a new off-line smart switcher: the VIPer20-E.
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AN1074
VIPer20-E
VIPer20-E.
VIPer20-E
VIPer Design Software
ST VIPER 22
ST VIPER 17
BE-16-118CPH
be16-118cph
EE16-Z
PC30 from TDK
AN1074
viper flyback transformer
VIPER50 application note
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Untitled
Abstract: No abstract text available
Text: STW9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw STW9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances
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STW9N150
O-247
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Untitled
Abstract: No abstract text available
Text: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS
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SD2942
SD2942
SD2932.
SD2942W
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LVDS to MIPI DSI
Abstract: MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode
Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories
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OT-666
OT-666
LVDS to MIPI DSI
MIPI DSI to lvds
mipi DSI LCD controller
MDDI to MIPI datasheet
ci 666
MIPI Specification
MIPI DSI
MIPI DSI lvds
MIPI DSI Device Controller
4F2 diode
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FBGA63
Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
byte/264
TSOP48
VFBGA55
VFBGA63
FBGA63
NAND512R4A2C
NAND512W4A2C
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6414a
Abstract: st10 Bootstrap AN23 LQFP144 PQFP144 ST10 ST10F272E ST10F272M 3170B
Text: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator – Enhanced boolean bit manipulations
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ST10F272M
16-bit
16-bit
40-bit
32-bit
6414a
st10 Bootstrap
AN23
LQFP144
PQFP144
ST10
ST10F272E
ST10F272M
3170B
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VIPer20A-E
Abstract: EE16 transformer working AN1246 pico fuse Cramer Coil CSM cramer transformers J2/Cramer coil CS11 H11A817A RS10
Text: AN1246 Application note VIPower: auxiliary BIAS power supply using VIPer20A-E Introduction This application note describes a bias power supply to meet the needs of powering up Power MOSFETs as well as providing standby power when the main unit is off. The VIPer20ADIP-E, a part of STMicroelectronics proprietary VIPower Vertical Intelligent
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AN1246
VIPer20A-E
VIPer20ADIP-E,
VIPer20A-E
EE16 transformer working
AN1246
pico fuse
Cramer Coil CSM
cramer transformers
J2/Cramer coil
CS11
H11A817A
RS10
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sd2943
Abstract: 200B 700B M177 SD2933
Text: SD2943 RF Power Transistor HF/VHF/UHF N - Channel MOSFETs General Features • HIGH POWER CAPABILITY ■ POUT = 350W MIN. WITH 22dB GAIN @ 30 MHz ■ PSAT = 450 W ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES ■ GOLD METALLIZATION
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SD2943
SD2943
SD2933,
200B
700B
M177
SD2933
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JESD97
Abstract: J-STD-020B PD54003L-E STMICROELECTRONICS MSL PACKAGES st 54003 TRANSISTOR AO SMD MARKING
Text: PD54003L-E RF Power Transistors The LdmoST Plastic FAMILY Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 3W WITH 20 dB GAIN @ 500MHz ■ NEW RF PLASTIC PACKAGE ■ EDS PROTECTION ■ SUPPLIED IN TAPE & REEL OF 3K UNITS
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PD54003L-E
500MHz
2002/93/EC
PD54003L-E
JESD97
J-STD-020B
STMICROELECTRONICS MSL PACKAGES
st 54003
TRANSISTOR AO SMD MARKING
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6206a
Abstract: stmicroelectronics "serial eeprom" st10 Bootstrap ST10F272MR
Text: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator
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ST10F272M
16-bit
40-bit
32-bit
6206a
stmicroelectronics "serial eeprom"
st10 Bootstrap
ST10F272MR
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Untitled
Abstract: No abstract text available
Text: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) ) s ( ct 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec •
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STL80N4LLF3
STL80N4LLF3
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STL65N3LLH5
Abstract: No abstract text available
Text: STL65N3LLH5 N-channel 30 V, 0.0048 Ω, 19 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb 1 2 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STL65N3LLH5
STL65N3LLH5
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Untitled
Abstract: No abstract text available
Text: THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. DIST REVI S IONS FT LTR DI HOUSI NG, OTY: I MATERIAL: THERMOPLASTIC, \ MAY BE COLOR-SEE DESCRIPTION DATE DWN REVISED
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OCR Scan
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O-06-013152
07JUN2006
04JAN2007
24AUG2001
24AUG200I
29JUL2004
AR2000
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