04DEC08 Search Results

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AA 22 LTR A1 DESCRIPTION REVISED ECR —0 8 —031 6 2 8 DATE DWN APVD 15 JU N 2 0 0 5 AZ SY MATERIAL: H O U S IN G - PCT P O LY E S T E R , BLACK, U L 9 4 V - 0 .

CVCO55CL-0184-0190

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 184 MHz 5.0 VDC Lower Frequency: Upper Frequency: 190 Tuning Voltage: 0.0 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -3.0 +3.0 dBm Supply Current: MHz 7 nd mA Harmonic Suppression 2 Harmonic :

Contextual Info: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 5 4 2 3 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T AA C O R P O R A TIO N . R E V I S I ON S 00 LTR C D E S C R IP T IO N REVISED

4228SS

Contextual Info: WTK4228 Surface Mount Dual N-Channel Enhancement Mode MOSFET 6 3 6.8 AMPERES D2 S2 7 2 DRAIN CURRENT D1 G1 8 1 5 DRAIN SOURCE VOLTAGE D2 4 G2 Features: D1 S1 P b Lead Pb -Free 30 VOLTAGE *Super high dense cell design for low RDS(ON) RDS(ON)<26mΩ @VGS = 10V

Contextual Info: RS3GB Surface Mount Fast Recovery Rectifiers REVERSE VOLTAGE 400 VOLTS FORWARD CURRENT 3.0 AMPERE P b Lead Pb -Free * All material are in full conformity of RoHs. Features: * For Surface Mount Application * Glass Passivated Chip * Low Reverse Leakage Current

93062

Abstract: HFA15PB60 15pb60 IRFP250 marking dt2
Contextual Info: HFA15PB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • • • • • • Base common cathode BENEFITS • • • • • 2 1 Anode 1 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions

Contextual Info: TH IS IT L OC DRAWING IS IS SUB JE CT A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N TO C HANG E AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N S H O U LD BE C ON T A C T E D FOR THE L A T E S T R E V I S I O N .

KSA928A

Contextual Info: WEITRON KSA928A PNP Transistor COLLECTOR 2. P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE 1. EMITTER TO-92L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol value Units Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30

VISHAY MARKING SG

Abstract: S070B vishay sj 96 DO-219AB S07D S07G S07J S07M Vishay semiconductor SM vishay diode MARKING CODE sg
Contextual Info: S070B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s

marking 08 sot89

Abstract: IC marking
Contextual Info: WTM1766 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage

amphenol 74868 ug

Contextual Info: THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES BODY - BRASS, NICKEL PLATING CONTACT - BERYLLIUM COPPER,SIUVER PLATING INSULATOR - PTFE 2. ELECTRICAL: A. IMPEDANCE: 50 OHM 3. MECHANICAL: A. DURABILITY: 500 CYCLES MIN. B. TEMPERATURE RANGE: - 65’C to +165’C

CVCO55CL-0184-0190

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 184 MHz 5.0 VDC Lower Frequency: Upper Frequency: 190 Tuning Voltage: 0.0 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -3.0 +3.0 dBm Supply Current: MHz 7 nd mA Harmonic Suppression 2 Harmonic :

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC D IS T R E V IS IO N S AA RESERVED. C O R P O R A T IO N . D E S C R IP T IO N A' REVISED ECR-

5558524-1

Abstract: LT 5207
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED EOR C O P Y R IG H T B Y TYCO E L E C T R O N IC S -, P U B L IC A T IO N ALL R IG H T S - RESERVED. C O R P O R A T IO N . -21 .34 - [ .8 4 0 ] D 1 3.64 [ 0 .3 8 —, [.0 1 5 0 □ J 3.94 [.1 55]

EN61000-3-3

Abstract: EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5 AMD150PS24
Contextual Info: AC-DC 150 Watts xppower.com AMD150 Series • Energy Star Level V • CEC2008 & EISA2007 Compliant • Universal Input • High Efficiency • 0 °C to +70 °C Operating Temperature • Non-standard Connectors Available • International Safety Approvals Specification

T1 Packaging vishay

Abstract: 354 optocoupler optocoupler smd slotted optocouplers 4 pin optocoupler 8 channel optocouplers optocoupler smd 16 pin vishay sfh6156 optocoupler CNY17-3X007T CNY64
Contextual Info: Packaging, Tape and Reel Information Vishay Semiconductors Packaging, Tape and Reel Information DESCRIPTION DEVICES PER TUBE Optocouplers are available in plastic dual-in-line packages DIP , SOP packages, and in a surface-mount, gull-wing, lead bend configuration. Optocouplers purchased in the DIP

Contextual Info: 8 THIS ^ DRAWING COPYRIGHT IS U N PU B LIS H E D . - 7 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION 6 5 4 2 3 - LOC A L L RIGHTS RESERVED. 1 R E V IS IO N S D IST AA 2 2 P LTR D E SCRIPTIO N A1 MATERIAL: D -21 . 336[.840] 13.640 [.537] 71 HOUSING

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC RESERVED. D IS T REVISIO N S AA C O R P O R A T IO N . D E S C R IP T IO N A1 REVISED TO RE VISED

24C44

Abstract: CAT24C44VI-GT3 MD-1083 24c44v AEC-Q100 CAT24C44 16 bit counter with latch
Contextual Info: CAT24C44 256-Bit Serial Nonvolatile CMOS Static RAM FEATURES • Single 5V Supply ■ JEDEC Standard Pinouts: –8-lead DIP –8-lead SOIC ■ Infinite EEPROM to RAM Recall ■ CMOS and TTL Compatible I/O ■ 100,000 Program/Erase Cycles EEPROM ■ Low CMOS Power Consumption:

Contextual Info: WTC351 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 3 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE P b Lead Pb -Free 1 GATE Features: 2 SOURCE * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<60mΩ @VGS=10V RDS(ON)<100mΩ @VGS=4.5V * Rugged and Reliable